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1. 发明专利

JPH08107139A INSULATING RING MEMBER AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED THEREWITH 失效
公开(公告)号：JPH08107139A
公开(公告)日：1996-04-23
申请号：JP24142594
申请日：1994-10-05
申请人： HITACHI LTD , SUMITOMO METAL IND
发明人： TOMITA KAZUISHI , URUSHIYA HIROSHI , KIMURA SHOICHI , YOSHIDA MASAMICHI , SATO MINEICHI , MORI MIKIO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE: To provide an insulating ring member which prevents the side face of a wafer from being processed by plasma so as to reduce foreign objects produced by plasma and to improve the wafer in yield when the wafer is processed with plasma and a semiconductor manufacturing device equipped therewith. CONSTITUTION: An insulating ring member 3 is used in a processing chamber where a wafer 1 is processed with plasma and possessed of an inner circumferential face 3a corresponding to the side face 1a of the wafer 1, wherein a gap (t) between the side face 1a of the wafer 1 and the inner circumferential face 3a of the ring member 3 is set smaller than 1mm when the wafer 1 is mounted on an electrostatic chuck 2 as a specimen pad.

2. 发明专利

JPH07335616A WAFER TREATMENT DEVICE 失效
公开(公告)号：JPH07335616A
公开(公告)日：1995-12-22
申请号：JP12291094
申请日：1994-06-06
申请人： HITACHI LTD
发明人： SATO MINEICHI , YOSHIDA MASAMICHI
IPC分类号： C23C14/56 , C23F4/00 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PURPOSE:To provide a wafer treatment device with which the part, where foreign substance adheres, can be washed efficiently, wafer treatment can be conducted efficiently, and the deterioration in cleanness can be prevented. CONSTITUTION:The wafer treatment device is provided with a plasma etching chamber 2 where prescribed treatment can be conducted on a wafer 1, the first and the second plasma cleaning chambers 3a and 3b which are provided adjacent to the plasma etching chamber 2, a wafer stock chamber 4, where the wafer 1 is stocked and provided adjacent to the plasma cleaning chambers 3a and 3b, add the first and the second wafer conveying jigs 5a and 5b which are provided in such a manner that they can be moved between the plasma etching chamber 2 and the wafer stock chamber 4 passing through the plasma cleaning chambers 3a and 3b and that they stop in the plasma etching chamber 2 while the wafer 1 is being treated. When the wafer 1, which is retained by one of the conveying jigs 5a and 5b, is treated, the other wafer conveying jig, with which the treated wafer 1 is returned to the wafer stock chamber 4, is cleaned in the first or the second plasma cleaning chambers 3a and 3b.

3. 发明专利

JPH09181049A ETCHING METHOD AND APPARATUS 失效
公开(公告)号：JPH09181049A
公开(公告)日：1997-07-11
申请号：JP33710095
申请日：1995-12-25
申请人： HITACHI LTD
发明人： URUSHIYA HIROSHI , ITO GIICHI , YOSHIDA MASAMICHI , SUZUKI TAKASHI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve the yield of semiconductor wafers in an etching treatment. SOLUTION: An etching apparatus comprises a vacuum treating vessel 4 shut off from the outside 18 to be capable of forming a vacuum atmosphere inside 4a, means 7 for evacuating the vessel 4, means 5 for feeding a treating gas 13 in the inside 4a of the vessel 4, a sample holder 2 which supports a semiconductor wafer 1 and acts as an electrode, a counter electrode 6 for generating a plasma 12 in the inside 4a of the vessel 4, and an insulative ring 3 which covers the periphery 1d of the surface of the wafer 1 supported on the holder 2 and faces at the holder 2. When etching, a very small gap 14 to block the plasma 12 from turning round to the side face 1a of the wafer 1 is formed between a photo resist film 34 on the surface periphery 1d of the wafer 1 and the ring 3 and etching treatment is done with this periphery contactlessly covered with the ring 3.

4. 发明专利

JPH0722392A ETCHING EQUIPMENT 失效
公开(公告)号：JPH0722392A
公开(公告)日：1995-01-24
申请号：JP15019393
申请日：1993-06-22
申请人： HITACHI LTD
发明人： YOSHIDA MASAMICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable an etching equipment to be lessened in electrode consumption and running cost and improved in etching rate by a methods wherein a wafer is attached to each of a pair of electrodes, and the wafers are etched. CONSTITUTION:In an etching equipment, two electrostatically attracting electrodes 1 are disposed confronting each other in a treatment chamber 7, exhaust vents 3 and treatment gas jet hole 4 are provided to side walls 8 inside the treatment chamber 7, a direct power supply is applied to both the electrodes to enable them to attract a wafer 2 respectively, treatment gas of high pressure is introduced to the wafers 2 attached to the electrodes 1 from the treatment gas jet hole 4, and a high frequency power supply 5 is applied to generate plasma to carry out etching.

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