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    • 5. 发明专利
    • LIGHT APPLIED CURRENT TRANSFORMER
    • JPH11109007A
    • 1999-04-23
    • JP26981297
    • 1997-10-02
    • HITACHI LTDKANSAI ELECTRIC POWER CO
    • SONE ISAMUSHIROKURA TOSHIJIKAWASHIMA KEIZABUROHAYASHIDA HIROSHINAKAGAMA YOSHIAKI
    • G01R33/032G01R15/24H01L31/02
    • PROBLEM TO BE SOLVED: To improve the response for detecting the change in quantity of light by multiplying the detection signal of a detection frequency component being obtained from each detection signal according to modulation light at a different frequency by a reference signal and performing AC/DC conversion by the double frequency component to be outputted. SOLUTION: Light with different frequencies from light sources 7 and 7' is applied to a Faraday rotor through each different light branching equipment, optical fiber, convergence lens, and polarizer in different directions. Light whose quantity is changed by the Faraday effect is passed through a polarizer, a convergence lens, and a light branching equipment that differ from previous ones and then light J1 " and J2 " are photoelectrically converted by photoelectric conversion parts 8 and 8'. The signal is multiplied by a reference signal being outputted from phase-adjusting equipment 14 and 14' by multipliers 15 and 15', and the signal is inputted to A/D converters 17 and 17' through filters 16 and 16' for passing each frequency component, thus obtaining each DC signal being subjected to AC/DC conversion. An adder 18 and a subtractor 19 obtain the sum and difference, divide a differential signal by a sum signal by a divider 20, and detects the change in the quantity of light due to the Faraday effect.
    • 9. 发明专利
    • SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    • JPH09283739A
    • 1997-10-31
    • JP9264996
    • 1996-04-15
    • MITSUBISHI ELECTRIC CORPKANSAI ELECTRIC POWER CO
    • SATO KATSUMIHAYASHIDA HIROSHINISHIO TORU
    • H01L29/74
    • PROBLEM TO BE SOLVED: To realize a semiconductor device which is superior in withstanding voltage characteristic and little in power feed loss by irradiating charged particles at specified irradiating rate on at least one principal plane of a semiconductor substrate before heating it over a specified temp. SOLUTION: A principal plane of an n-type Si substrate 100 is irradiated with a proton beam at an irradiation rate of 5×10 cm-2 to from a crystal defect region 100a, impurity ions are implanted and drive-in-diffused at 1250 deg. for 150hrs. to form a p-type base layer 101 and p-type emitter layer 102 and an n-type base layer 103 is formed therebetween, thermal oxide films 100b and 100c are formed on both principal planes of the substrate 100. The oxide film 100b on the layer 101 is selectively removed to deposit an impurity on this layer 101 and the drive-in diffusion is made at 1250 deg. for 10hrs. to form an n-type emitter layer 104. The films 100b, 100c are removed to form a cathode electrode 105 and gate electrode 106 on the principal plane at the p-type base layer 101 and anode electrode 107 on the principal plane at the p-type emitter layer 102. Thus it is possible to realize a high-withstanding voltage thyristor having a low ON-voltage and little power feed loss.