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1. 发明专利

JP2000133626A SUBSTRATE WASHING DEVICE 失效
公开(公告)号：JP2000133626A
公开(公告)日：2000-05-12
申请号：JP30370498
申请日：1998-10-26
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD , DAINIPPON SCREEN MFG
发明人： KINOSHITA HIDEO , SAKATA YASUKI , ONISHI AKIHIRO , TOMOSAWA AKIHIRO , HIRAOKA NOBUYASU , NISHI KOJI
IPC分类号： B08B3/02 , B08B3/12 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To prevent the re-adhesion of any particles on the surface of a substrate, and to prevent the damage of the surface of the substrate due to ultrasonic waves at the time of supplying washing liquid to which ultrasonic waves are applied, and washing the back face of the substrate. SOLUTION: In this substrate washing device, a substrate W is rotated through a mechanical type spin chuck 10 in a state that the surface of the substrate W is faced down, and washing liquid to which ultrasonic waves are applied is supplied from a first washing liquid supplying nozzle 17 to the back face of the substrate W so that the back face of the substrate W can be washed. In this case, the washing liquid is radially supplied from a second washing liquid supplying nozzle 20 from the lower part of the substrate W to the surface of the substrate W. The washing liquid is thinly spread on the surface of the substrate W so that the re-adhesion of any particles on the surface of the substrate can be prevented, and the washing liquid is spread without being locally made thick on the surface of the substrate so that even when the ultrasonic waves are transmitted from the back face side of the substrate W to the surface of the substrate, the surface of the substrate can be prevented from being damaged due to the ultrasonic waves.

2. 发明专利

JP2003124233A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003124233A
公开(公告)日：2003-04-25
申请号：JP2002226991
申请日：2002-08-05
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： NUMAZAWA SUMUTO , NAKAZAWA YOSHITO , KOBAYASHI MASAYOSHI , KUDO SATOSHI , IMAI YASUO , KUBO SAKAE , SHIGEMATSU TAKU , ONISHI AKIHIRO , UESAWA KOUZOU , OISHI KENTARO
IPC分类号： H01L21/316 , H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To solve the problem that reliability in a semiconductor device having a MISFET of a trench gate structure is lowered. SOLUTION: In a method for manufacturing a semiconductor device having a MISFET of a trench gate structure, a groove 4 is formed of a main plane of a first conductive type semiconductor layer 1B as a drain area to the depth direction thereof, and a gate insulating film 5 composed of a thermal oxide film 5A and a deposited film 5B on the internal plane of the groove 4 is formed, and a gate electrode 6A is formed in the groove 4. Thereafter, impurities are introduced into the first conductive type semiconductor layer 1B to form a second conductive type semiconductor area 8 as a channel forming area, and impurities are introduced into the second conductive type semiconductor area 8 to form a first conductive type semiconductor area 9 as a source area.

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