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    • 5. 发明专利
    • Semiconductor integrated circuit device and microprocessor
    • 半导体集成电路设备和微处理器
    • JP2003288791A
    • 2003-10-10
    • JP2003048678
    • 2003-02-26
    • Hitachi Ltd株式会社日立製作所
    • ISHIKAWA EIICHISAITO YASUYUKISATO NARIHISAYADA NAOKIMATSUBARA KIYOSHI
    • G11C16/06G06F15/78G11C16/02G11C16/04G11C29/00G11C29/56
    • PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of solving a restriction that an object once programmed cannot be changed later such as a laser fuse. SOLUTION: The device has a nonvolatile memory area (300) which is electrically erasable and writable and stores adjustment information, memory circuits (TRMR1, TRMR2) which is combined with the nonvolatile memory area so as to receive the adjustment information and stores the adjustment information, and an internal circuit (42) combined with the memory circuit. The adjustment information is transferred to the memory circuit from a nonvolatile memory element responding to the initialization operation of the semiconductor integrated circuit device, and the operation of the internal circuit is controlled by the adjustment information stored in the memory circuit. Thereby, trimming can be freely made by software. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供一种半导体集成电路器件,其能够解决一旦被编程的对象稍后不能改变的限制,例如激光熔丝。 解决方案:该装置具有电可擦除和可写入的非易失性存储区域(300),并存储调整信息,与非易失性存储区域结合的存储电路(TRMR1,TRMR2),以便接收调整信息并存储 所述调整信息以及与所述存储器电路组合的内部电路(42)。 响应于半导体集成电路装置的初始化操作,调整信息从非易失性存储元件转移到存储器电路,内部电路的操作由存储在存储电路中的调整信息控制。 因此,可以通过软件自由地进行修剪。 版权所有(C)2004,JPO
    • 8. 发明专利
    • MICROCOMPUTER SYSTEM
    • JP2002032996A
    • 2002-01-31
    • JP2001167630
    • 2001-06-04
    • HITACHI LTD
    • MATSUBARA KIYOSHISATO NARIHISAISHIKAWA EIICHI
    • G06F12/16G06F15/78G11C29/00G11C29/04
    • PROBLEM TO BE SOLVED: To provide a system which can relieve a defect of a non-volatile storage device on-chipped to a microcomputer on board. SOLUTION: A non-volatile storage device on-chipped to a microcomputer is provided with memory cells (MC-R) for redundancy and memory cells (MC-C) for storing relieving information specifying memory cells (MC) to be substituted by a memory cell for redundancy. At the time of write-in of relieving information, selection of the memory cells (MC-C) is performed by a relieving bit selecting circuit (RSEL). The written relieving information is initially loaded to a relieving information latch (CLAT) by indication of a reset signal (MD2). An address comparing compares relieving information with address information from the compares relieving information with address information from the circuit (ACMP) compares relieving information with address information from the outside, when they are coincident, a memory cell (MC-R) for redundancy is selected. A system reset signal (22) utilized for generation of a reset signal (MD2) is outputted to a microcomputer by an another circuit (23).