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1. 发明专利

JP2002222636A FINELY ASSEMBLING EQUIPMENT FOR MICRO-MANIPULATOR 失效
公开(公告)号：JP2002222636A
公开(公告)日：2002-08-09
申请号：JP2001016490
申请日：2001-01-25
申请人： HITACHI LTD , HITACHI SCIENCE SYSTEMS LTD
发明人： UKIANA MOTOHIDE , MUTO KATSUMI , ONOSE MASAMI
IPC分类号： G01N23/04 , G01N1/28 , G01N1/32 , H01J37/20 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To enable additional processings in FIB system, while observing with high magnification and high resolution by separating a thin piece processed on an wafer with FIB equipment from the wafer, and in order to observe with TEM equipment, it is integrated to a grid with adhesion. SOLUTION: A work stand 4, which serves as a duty of handling and adhesion is installed in a stage 5 of a microscope 1. A glass board 16, which can move horizontally, is inserted to an upper surface of the work stand 4, and a grid 13 and the thin piece 12 are laid on this glass plate 16. It is made to approach gradually, so that a thin piece 12 may be brought close to a grid 13 side, by making the glass board 16 coarse movement and slight movement, and after contacting, they are bonded and unified.

2. 发明专利

JP2001021467A SAMPLE PREPARING METHOD THROUGH USE OF FOCUSING ION BEAM AND FOCUSING ION BEAM PREPARING DEVICE 失效
公开(公告)号：JP2001021467A
公开(公告)日：2001-01-26
申请号：JP19387899
申请日：1999-07-08
申请人： HITACHI LTD , HITACHI SCIENCE SYSTEMS LTD
发明人： MUTO KATSUMI , ITO KATSUJI , NUMAO YOSHINORI , IWAMOTO HIROSHI , TOMIMATSU SATOSHI , UMEMURA KAORU
IPC分类号： B23K15/00 , G01N1/28 , G01N1/32
摘要： PROBLEM TO BE SOLVED: To form suitable membranes by cutting out a specific part from a sample through the use of a focusing ion beam, elevating the specific part higher than other parts, and fixing the specific part in an elevated state to the other parts of the sample. SOLUTION: A work hole 2 is inclined to work on a specific part in a sample surface 8 through the use of a focusing ion beam, and a wedge-shaped sample 1 is fixed to a micro probe. After this, by cutting a sample supporting part by the FIB, the wedge-shaped sample 1 is extracted. Then by cutting various deposition films at the micro probe fixing part by the FIB and separating the micro probe, the wedge-shaped sample 1 is independently fixed onto a TEM holder. Then the fixed sample is formed into thin pieces for TEM samples by the FIB.

3. 发明专利

JPH0896739A SECONDARY ION MASS SPECTROMETRY DEVICE 失效
公开(公告)号：JPH0896739A
公开(公告)日：1996-04-12
申请号：JP22788994
申请日：1994-09-22
申请人： HITACHI LTD , HITACHI INSTRUMENTS ENG
发明人： SUMIYA HIROYUKI , MUTO KATSUMI , TAMURA HIFUMI
IPC分类号： G01N23/225 , G01N27/62 , H01J37/252 , H01J49/26
摘要： PURPOSE: To provide a secondary ion mass spectrometry method capable of measuring true concentration distribution from the outermost surface of a sample. CONSTITUTION: With a sample 3, a target 19 having the same quality or the same sputter rate to the sample is held in a sample chamber 30 exhausted to be vacuumized, to sputter the target by deflecting a primary ion beam 20 in a deflecting means 18, and a thin film of thickness two times or more a primary ion implanting range is formed in a surface of the sample 3. Thereafter, the sample is irradiated with a primary ion from a thin film side in the sample chamber, to mass spectrometrically analyze a secondary ion emitted from the sample.

4. 发明专利

JPH0547336A CONVERGENT ION BEAM/SECONDARY ION MASS SPECTROMETER COMPOSITE DEVICE 失效
公开(公告)号：JPH0547336A
公开(公告)日：1993-02-26
申请号：JP19915191
申请日：1991-08-08
申请人： HITACHI LTD , HITACHI INSTRUMENTS ENG
发明人： TOIDA HIROSHI , HIROSE HIROSHI , MUTO KATSUMI
IPC分类号： H01J37/252 , H01J49/26 , H01L21/302
摘要： PURPOSE:To form a machining cross section on a sample via the radiation of a convergent ion beam and perform the high-sensitivity secondary ion mass spectrometry on the machining cross section with one device. CONSTITUTION:A convergent ion beam for forming a machining cross section and a primary ion beam 1 for analyzing a sample 2 are radiated to the sample 2 according to the use. A device has a sample holder 8 holding the sample 2, an extracting electrode 3 of secondary ions 4 a secondary ion separation section, and a detection section. The holder 8 is constituted of a holder base 8A and a sample mount section 8B supported and incorporated by a slant system 26 on the base 8A face. When the base 8A is located at the proper position with respect to an extracting electrode 3 (the position where the distortion of the secondary ion extraction electric field can be reduced to the utmost), the sample mount section 8B can be inclined within the range at least from the position in the same direction as the holder base 8A to the position in the opposite direction to the holder base 8A by the slant system 26.

5. 发明专利

JPH11144659A FOCUSED ION BEAM MACHINING OBSERVATION DEVICE 失效
公开(公告)号：JPH11144659A
公开(公告)日：1999-05-28
申请号：JP30392897
申请日：1997-11-06
申请人： HITACHI LTD , HITACHI INSTRUMENTS ENG
发明人： MUTO KATSUMI , MATSUMOTO HIROAKI , ITO KATSUJI
IPC分类号： H01J37/20 , G01N1/28 , G01N1/32 , H01J37/317 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To relieve stress by an irradiation ion beam, generate a thin film stable in strength and form the thin film with various materials by applying a notch on one side or both sides of a thin film sample section when the thin film sample is made. SOLUTION: A Ga ion beam with high energy is used for generating a thin film sample with a focused ion beam machining observation device. A thin film with the thickness of about 1 μm is generated by coarse machining and intermediate machining, then it is machined by a machining beam to make it thinner. A thin film section is notched. It is confirmed that no deformation occurs on the thin film section even when the thickness of the thin film section becomes about 100 nm which can be observed by a transmission electron microscope(TEM). When a notch is applied to a sample having a deformation on the thin film section, the deformation of the thin film section is recovered, therefore the notch can be applied before or after machining. When notches are applied to both ends of the thin film section, the same effect can be confirmed.

6. 发明专利

JPH09274878A CHARGE PREVENTING METHOD USING CONVERGED ION BEAM WORKING AND OBSERVING DEVICE 失效
公开(公告)号：JPH09274878A
公开(公告)日：1997-10-21
申请号：JP8120596
申请日：1996-04-03
申请人： HITACHI LTD , HITACHI INSTRUMENTS ENG
发明人： MUTO KATSUMI
IPC分类号： H01J37/20 , H01J37/256 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a charge preventing method for discharging charge, which is generated and stored in an insulating layer as an object of observation by the irradiation of Ga ion beam, by forming a deep hole from the surface of a multi-film sample, which includes an insulating layer to be observed, to the insulating layer with a converged ion beam working and observing device. SOLUTION: A deep hole in a desirable shape is formed at an arbitrary place of the multi-film sample having a conductive layer 13 made of Si film and the insulating layer 14 made of SiO2 film from the surface of a multi-film sample to an insulating layer 14 as an observation object by working of a converged ion beam working and observing device (FIB) except for an FIB working place. A column 11 is formed in the worked deep hole by a tungsten (W) deposition with a tungsten deposition gun, and by the column 11 by W deposition, the conductive layer 13 and a sample fixing plate for the multi-film sample, a charge flow-out passage from the insulating layer 14 is formed. With this structure, charge generated and stored in the insulating layer 14 by the irradiation of Ga ion beam in flowed out through the charge flow-out passage, and charge is prevented, and observation of the insulating layer 14 is thereby enabled.

7. 发明专利

JPH09120790A IMPROVED CHARGED PARTICLE DETECTING DEVICE 失效
公开(公告)号：JPH09120790A
公开(公告)日：1997-05-06
申请号：JP28011395
申请日：1995-10-27
申请人： HITACHI LTD , HITACHI INSTRUMENTS ENG
发明人： MUTO KATSUMI , SUMIYA HIROYUKI , TAMURA HIFUMI , SEKI SETSUKO
IPC分类号： G01N23/225 , G01T1/28 , H01J37/244 , H01J43/02
摘要： PROBLEM TO BE SOLVED: To provide an improved charged particle detecting device equipped with a secondary electron multiplier tube with which the vividness and quantitativeness of images are enhanced, by controlling the energy of secondary electrons led to a dinode by any appropriate means, and distinguishing the noise from the sensor itself distinctly from the signal components. SOLUTION: An improved charged particle detecting device concerned (for example, scan type electron microscope) is equipped with a secondary electron multiplier tube 14, wherein the energy of secondary electrons led to a dinode provided in the multiplier tube is controlled on the basis of the energy of the secondary electrons put incident to the tube 14. That is, the energy to the dinode is adjusted by furnishing a variable voltage power supply 15 for impressing voltage on the first stage dinode 14a of the multiplier tube 14. As a result, the output of an image observing CRT 21 is passed through a capacitor 22, preamplifier 16, and discriminator 17 and selects only the high wave-height value, i.e., the genuine signal.

8. 发明专利

JP2000030650A SCANNING ELECTRON MICROSCOPE PROVIDED WITH IN-SITU SAMPLE PRETREATING FUNCTION 失效
公开(公告)号：JP2000030650A
公开(公告)日：2000-01-28
申请号：JP20006298
申请日：1998-07-15
申请人： HITACHI LTD , HITACHI INSTRUMENTS ENG
发明人： SUMIYA HIROYUKI , ASAKAWA TAKAYUKI , UEKI YASUMITSU , MUTO KATSUMI
IPC分类号： G01N1/36 , H01J37/147 , H01J37/20
摘要： PROBLEM TO BE SOLVED: To improve secondary electron generating efficiency according to an operation of a sample by impressing rectangular voltage superimposed to deflecting and scanning voltage toward an alkaline metal salt tablet arranged in the vicinity of a sample surface and injecting/sticking an electron impact desorption ion or thermoionization atom to the sample surface. SOLUTION: An electron beam 12 emitted from an electron gun 1 is focussed on a sample 7 surface by means of a diaphragm 2, a condenser lens 3, and an object lens 5 so as to be scanned via a deflecting electrode 4. A secondary electron 13 generated from the sample 7 surface is guided to a secondary electron detector 10 via the object lens 5 and a secondary electron deflecting electrode 9 so as to be transmitted as an image signal to a secondary electron image scanning CRT. In a scanning electron microscope, a tablet 6 prepared by pressing and molding alkaline metal salt powder alone or a mixture of alkaline metal salt powder and metal powder such as W or Co is arranged in the vicinity of the sample 7 surface. An impact is given to the tablet 6 by means of the electron beam 12, so that an electron impact desorption ion or a thermoionization atom is injected or stuck onto the sample 7 surface.

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