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    • 8. 发明专利
    • SEMICONDUCTOR LEAD FRAME WITH EXCELLENT RESIN CLOSE-CONTACT PERFORMANCE
    • JPH01102951A
    • 1989-04-20
    • JP26062987
    • 1987-10-15
    • HITACHI METALS LTD
    • WATANABE RIKIZOSEO TAKEHISASAKAMOTO DAIJIITO HISAAKIIKO KAZUOTABATA HARUO
    • H01L23/50
    • PURPOSE:To obtain a lead frame whose close contact performance with reference to a resin has been enhanced without lowering plating performance and soldering performance by a method wherein an amount of C measured by using an X-ray photoelectron spectroscopic analytical method on the surface obtained by removing a range of 10Angstrom from the surface of an object to be tested is contained at less than a specific amount. CONSTITUTION:An amount of C measured in the surface obtained by removing a range of 10Angstrom from the surface of an object to be tested by using an X-ray photoelectron spectroscopic analytical method is made to be 20 atomic % or below in order to check a situation contaminated by C, the surface is sputtered for one minute; the surface is removed by about 10Angstrom ; this surface is analyzed; when the close contact performance with reference to a resin is good, 20 atomic % or below of C is contained; when the close contact performance is bad, C exceeding 20 atomic % is contained. At a face at about 30Angstrom from the outermost surface, a part contaminated by C and O is almost removed irrespective of whether the close contact performance is good or bad. In order to reduce contamination by C on the surface of a lead frame, an annealing method in dry hydrogen, a careful cleaning method by using a surfactant and an organic solvent or the like is effective.