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    • 2. 发明专利
    • Ultrasonic transducer, ultrasonic probe, and ultrasonic imaging apparatus
    • 超声波传感器,超声波探头和超声波成像装置
    • JP2012023735A
    • 2012-02-02
    • JP2011162766
    • 2011-07-26
    • Hitachi LtdHitachi Medical Corp株式会社日立メディコ株式会社日立製作所
    • TANAKA HIROKIAZUMA TAKASHIFUKUDA HIROSHI
    • H04R19/00H01L29/84H04R7/00
    • PROBLEM TO BE SOLVED: To provide an ultrasonic transducer which is capable of improving ultrasonic wave transmission/reception performance with a simple structure, and to provide an ultrasonic probe and an ultrasonic imaging apparatus.SOLUTION: In the ultrasonic transducer, an inner diaphragm layer 5a having a gap 4 thereinside is formed on a lower electrode 2 (first electrode) formed on a substrate 1, an upper electrode 3 (second electrode) and an outer diaphragm layer 5b are sequentially formed on the inner diaphragm layer 5a, and beams 7 connecting vertices facing each other of a diaphragm are formed on the outer diaphragm layer 5b. A capacitor is configured so that the lower electrode 2 and the upper electrode 3 face each other via the inner diaphragm layer 5a having the gap 4 thereinside.
    • 解决的问题:提供能够以简单的结构提高超声波发送/接收性能的超声波换能器,并且提供超声波探头和超声波成像装置。 解决方案:在超声波换能器中,在形成在基板1,上电极3(第二电极)和外隔膜层上的下电极2(第一电极)上形成具有其内部的间隙4的内隔膜层5a 5b依次形成在内隔膜层5a上,并且在外隔膜层5b上形成连接隔膜相对的顶点的波束7。 电容器被配置成使得下电极2和上电极3经由其内侧具有间隙4的内隔膜层5a彼此相对。 版权所有(C)2012,JPO&INPIT
    • 8. 发明专利
    • DE69127054T2
    • 1998-01-29
    • DE69127054
    • 1991-09-27
    • HITACHI LTD
    • FUKUDA HIROSHITERASAWA TSUNEO
    • G03F1/00G03F7/20H01L21/027H01L21/30G03B27/53G03F9/00G03B27/52
    • A novel method of pattern formation and a projection exposure apparatus are disclosed, in which the pupil of a projection lens of the projection exposure apparatus used for forming an LSI pattern or the like has mounted thereon an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r) = cos(2 pi beta r - &thetas;/2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, Fourier transform of a layout pattern drawn on the LSI is obtained, an obtained Fourier transform data is multiplied by cos(2 pi beta f - &thetas;/2)(where f is a spatial frequency, and beta , &thetas; appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 mu m by the use of an optical exposure system.
    • 9. 发明专利
    • DE69127054D1
    • 1997-09-04
    • DE69127054
    • 1991-09-27
    • HITACHI LTD
    • FUKUDA HIROSHITERASAWA TSUNEO
    • G03F1/00G03F7/20H01L21/027H01L21/30G03B27/53G03F9/00G03B27/52
    • A novel method of pattern formation and a projection exposure apparatus are disclosed, in which the pupil of a projection lens of the projection exposure apparatus used for forming an LSI pattern or the like has mounted thereon an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r) = cos(2 pi beta r - &thetas;/2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, Fourier transform of a layout pattern drawn on the LSI is obtained, an obtained Fourier transform data is multiplied by cos(2 pi beta f - &thetas;/2)(where f is a spatial frequency, and beta , &thetas; appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 mu m by the use of an optical exposure system.