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1. 发明公开

EP1950997A4 ULTRASONIC TRANSDUCER, ULTRASONIC PROBE AND ULTRASONIC IMAGING DEVICE 有权转让
标题翻译：超声波换能器，超音波探头与超声成像设备
公开(公告)号：EP1950997A4
公开(公告)日：2016-04-27
申请号：EP06782183
申请日：2006-08-02
申请人： HITACHI LTD , HITACHI MEDICAL CORP
发明人： TANAKA HIROKI , AZUMA TAKASHI , FUKUDA HIROSHI
IPC分类号： H04R1/40 , A61B8/00 , B06B1/02 , G01N29/24 , H04R7/08 , H04R19/00
CPC分类号： B06B1/0292
摘要： An ultrasonic transducer (100) includes a substrate (1) having a first electrode therein or on a surface thereof and a diaphragm (5) having a second electrode therein or on a surface thereof, with a cavity (4) therebetween. Further, at least one beam (7) is provided on a surface or inside of the diaphragm (5) or the second electrode.

2. 发明专利

JP2012023735A Ultrasonic transducer, ultrasonic probe, and ultrasonic imaging apparatus 有权
标题翻译：超声波传感器，超声波探头和超声波成像装置
公开(公告)号：JP2012023735A
公开(公告)日：2012-02-02
申请号：JP2011162766
申请日：2011-07-26
申请人： Hitachi Ltd , Hitachi Medical Corp , 株式会社日立メディコ , 株式会社日立製作所
发明人： TANAKA HIROKI , AZUMA TAKASHI , FUKUDA HIROSHI
IPC分类号： H04R19/00 , H01L29/84 , H04R7/00
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic transducer which is capable of improving ultrasonic wave transmission/reception performance with a simple structure, and to provide an ultrasonic probe and an ultrasonic imaging apparatus.SOLUTION: In the ultrasonic transducer, an inner diaphragm layer 5a having a gap 4 thereinside is formed on a lower electrode 2 (first electrode) formed on a substrate 1, an upper electrode 3 (second electrode) and an outer diaphragm layer 5b are sequentially formed on the inner diaphragm layer 5a, and beams 7 connecting vertices facing each other of a diaphragm are formed on the outer diaphragm layer 5b. A capacitor is configured so that the lower electrode 2 and the upper electrode 3 face each other via the inner diaphragm layer 5a having the gap 4 thereinside.
摘要翻译：解决的问题：提供能够以简单的结构提高超声波发送/接收性能的超声波换能器，并且提供超声波探头和超声波成像装置。解决方案：在超声波换能器中，在形成在基板1，上电极3（第二电极）和外隔膜层上的下电极2（第一电极）上形成具有其内部的间隙4的内隔膜层5a 5b依次形成在内隔膜层5a上，并且在外隔膜层5b上形成连接隔膜相对的顶点的波束7。电容器被配置成使得下电极2和上电极3经由其内侧具有间隙4的内隔膜层5a彼此相对。版权所有（C）2012，JPO＆INPIT

3. 发明公开

EP1932476A4 ULTRASONOGRAPHIC DEVICE 审中-公开
公开(公告)号：EP1932476A4
公开(公告)日：2010-06-23
申请号：EP06712546
申请日：2006-01-30
申请人： HITACHI MEDICAL CORP
发明人： AZUMA TAKASHI , UMEMURA SHINICHIRO , NAGATA TATSUYA , FUKUDA HIROSHI , MACHIDA SHUNTARO , MINE TOSHIYUKI
IPC分类号： A61B8/00 , B06B1/02 , G01N29/24
CPC分类号： A61B8/4483 , A61B8/08 , A61B8/4281 , B06B1/0292 , G01N29/2431 , G01S15/00

4. 发明授权

US6410881B2 Process for manufacturing electronic circuits 失效
标题翻译：电子电路制造工艺
公开(公告)号：US6410881B2
公开(公告)日：2002-06-25
申请号：US88201901
申请日：2001-06-18
申请人： HITACHI LTD
发明人： KATAYAMA KAORU , FUKUDA HIROSHI , KAZUI SHINICHI , OHTA TOSHIHIKO , IWATA YASUHIRO , SHIRAI MITSUGU , TAMURA MITSUNORI
IPC分类号： B23K1/005 , H01L21/60 , H05K3/34 , B23K26/00 , B23K31/02
CPC分类号： H01L24/75 , H01L24/81 , H01L2224/1181 , H01L2224/13111 , H01L2224/16 , H01L2224/45144 , H01L2224/75 , H01L2224/7501 , H01L2224/81014 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01033 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/16152 , H01L2924/166 , H05K3/3457 , H05K3/3489 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , Y10T29/49174 , H01L2924/00
摘要： The process for manufacturing an electronic circuit includes disposing an electronic device on a circuit substrate and hot melting a solder formed on the electronic device or the circuit substrate to bond the electronic device and the circuit substrate. The process includes the steps of feeding a liquid onto lands on the circuit substrate, aligning and mounting the electronic device on the lands, placing the circuit substrate in a treating vessel and heating the circuit substrate. The heating step includes controlling a pressure of an atmosphere in the treating vessel, hot-melting the solder to prevent at least a portion of the liquid from evaporating until the electronic device and the circuit substrate are bonded and to permit the liquid to evaporate after the electronic device and the circuit substrate are bonded.
摘要翻译：电子电路的制造方法包括将电子器件设置在电路基板上，对形成在电子器件或电路基板上的焊料进行热熔融，使电子器件和电路基板接合。该方法包括以下步骤：将液体供给到电路基板上的焊盘上，将电子设备对准和安装在焊盘上，将电路基板放置在处理容器中并加热电路基板。加热步骤包括控制处理容器中的气氛的压力，热熔焊料以防止液体的至少一部分蒸发直到电子器件和电路基板接合，并允许液体在电子器件和电路基板结合。

5. 发明专利

DE602006001333D1 未知
公开(公告)号：DE602006001333D1
公开(公告)日：2008-07-10
申请号：DE602006001333
申请日：2006-02-24
申请人： HITACHI LTD
发明人： FUKUDA HIROSHI , MATSUSHIMA HITOSHI
IPC分类号： G11B33/14 , G06F1/20 , G11B33/02 , G11B33/12
摘要： A disk array apparatus (10) including a rack-shaped basic frame (1), and a plurality of disk boxes (20) that can be inserted into and pulled out of the basic frame depth-wise. Each disk box has: disk drive connectors (7) for connecting a plurality of disk drives (5) arranged in a matrix on a platter substrate (6), which is the bottom face of the disk box, roughly parallel to the depth direction of the basic frame; and a cooling module (11) for cooling the disk drives. The disk box is a hermetically sealed structure.

6. 发明专利

AT527701T 未知
公开(公告)号：AT527701T
公开(公告)日：2011-10-15
申请号：AT08157887
申请日：2008-06-09
申请人： HITACHI LTD
发明人： OGAWA SUSUMU , TROUP ANDREW , WILLIAMS DAVID , FUKUDA HIROSHI
IPC分类号： H01L43/08 , H01L43/12

7. 发明专利

AT523904T 未知
公开(公告)号：AT523904T
公开(公告)日：2011-09-15
申请号：AT08157888
申请日：2008-06-09
申请人： HITACHI LTD
发明人： OGAWA SUSUMU , TROUP ANDREW , WILLIAMS DAVID , FUKUDA HIROSHI
IPC分类号： H01L43/08

8. 发明专利

DE69127054T2 未知
公开(公告)号：DE69127054T2
公开(公告)日：1998-01-29
申请号：DE69127054
申请日：1991-09-27
申请人： HITACHI LTD
发明人： FUKUDA HIROSHI , TERASAWA TSUNEO
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , H01L21/30 , G03B27/53 , G03F9/00 , G03B27/52
摘要： A novel method of pattern formation and a projection exposure apparatus are disclosed, in which the pupil of a projection lens of the projection exposure apparatus used for forming an LSI pattern or the like has mounted thereon an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r) = cos(2 pi beta r - &thetas;/2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, Fourier transform of a layout pattern drawn on the LSI is obtained, an obtained Fourier transform data is multiplied by cos(2 pi beta f - &thetas;/2)(where f is a spatial frequency, and beta , &thetas; appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 mu m by the use of an optical exposure system.

9. 发明专利

DE69127054D1 未知
公开(公告)号：DE69127054D1
公开(公告)日：1997-09-04
申请号：DE69127054
申请日：1991-09-27
申请人： HITACHI LTD
发明人： FUKUDA HIROSHI , TERASAWA TSUNEO
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , H01L21/30 , G03B27/53 , G03F9/00 , G03B27/52
摘要： A novel method of pattern formation and a projection exposure apparatus are disclosed, in which the pupil of a projection lens of the projection exposure apparatus used for forming an LSI pattern or the like has mounted thereon an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r) = cos(2 pi beta r - &thetas;/2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, Fourier transform of a layout pattern drawn on the LSI is obtained, an obtained Fourier transform data is multiplied by cos(2 pi beta f - &thetas;/2)(where f is a spatial frequency, and beta , &thetas; appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 mu m by the use of an optical exposure system.

10. 发明专利

DE4303028A1 Projection exposure appts. for LSI mfr. - has light source and annular illumination distributor, arranging light beams on plane of effective source 未知
公开(公告)号：DE4303028A1
公开(公告)日：1993-08-05
申请号：DE4303028
申请日：1993-02-03
申请人： HITACHI LTD
发明人： FUKUDA HIROSHI , YAMANAKA RYOKI , TAWA TSUTOMU , TERASAWA TSUNEO , YONEZAWA SEIJI
IPC分类号： G03F7/20
摘要： The projection exposure appts. images a fine pattern with a high contrast and large depth sharpness. It has a light source and an illumination distributor with an annular shape w.r.t. an optical axis of the light beams of the source on the plane of an effective source (5). An illumination optical system (6) guides the light from the effective source plane onto a mask (1) with a preset pattern. The latter is projected onto a resist film by a lens system (2). The light permeation reduction device (4) reduces the light passage through a first region, as compared with a second one in the pupil plane of the projector. USE/ADVANTAGE - For fine circuit pattern of LSI, etc., using a photoreceptor process, with increased resolution.

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