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    • 10. 发明专利
    • LEAD FRAME AND SEMICONDUCTOR DEVICE STRUCTURE USING IT
    • JPH08204097A
    • 1996-08-09
    • JP941495
    • 1995-01-25
    • HITACHI LTDHITACHI HOKKAI SEMICONDUCTOR
    • MIYAKI YOSHINORITOMIHARA SEIICHI
    • H01L23/50
    • PURPOSE: To considerably enhance heat radiation of a semiconductor chip by a method wherein there is provided heat-reading radiating means for radiating heat generated in the semiconductor chip directly toward the atmosphere not via a package. CONSTITUTION: In a die pad 2, there is provided a heat sink (heat-radiating means) 4 being a cross-shaped heat-radiating part constituting a single cross shape in a plane direction of the die pad 2 so as to project in a thickness direction of the die pad 2. A lead frame 1 forming the cross-shaped heat sink 4 is resin-sealed to form a QFP-type semiconductor device 5. The semiconductor device 5 is resin-sealed under a condition that the cross-shaped heat sink 4 constituting a single cross shape in a plane direction of the die pad 2 projects in a thickness direction of the die pad 2 and is located in the same height as a surface of a package 6, and the surface of the heat sink 4 is exposed in the atmosphere. As the heat sink 4 is a part of the die pad 2, it is possible to radiate heat generated from a semiconductor chip 7 directly toward the atmosphere not via the package 6 low in heat conductivity, and considerably enhance heat radiation of the semiconductor chip 7.