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1. 发明专利

DE4102574A1 未知
公开(公告)号：DE4102574A1
公开(公告)日：1991-08-01
申请号：DE4102574
申请日：1991-01-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SAKURAI NAOKI , MORI MUTSUHIRO , ARAKAWA HIDETOSHI , ONDA KENICHI , MIYAZAKI HIDEKI , KANOUDA AKIHIKO
IPC分类号： H01L21/762 , H01L21/8249 , H01L27/06 , H01L29/06 , H01L29/739 , H01L29/872 , H02M7/00 , H02M7/5387 , H02P6/06 , H02P6/08

2. 发明专利

DE4102574C2 未知
公开(公告)号：DE4102574C2
公开(公告)日：1996-06-05
申请号：DE4102574
申请日：1991-01-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SAKURAI NAOKI , MORI MUTSUHIRO , ARAKAWA HIDETOSHI , ONDA KENICHI , MIYAZAKI HIDEKI , KANOUDA AKIHIKO
IPC分类号： H01L21/762 , H01L21/8249 , H01L27/06 , H01L29/06 , H01L29/739 , H01L29/872 , H02M7/00 , H02M7/5387 , H02P6/06 , H02P6/08 , H02P7/63

3. 发明专利

JPH03226291A SEMICONDUCTOR INTEGRATED CIRCUIT AND MOTOR CONTROLLER EMPLOYING THE SAME 失效
公开(公告)号：JPH03226291A
公开(公告)日：1991-10-07
申请号：JP1907090
申请日：1990-01-31
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SAKURAI NAOKI , MORI MUTSUHIRO , ONDA KENICHI , MIYAZAKI HIDEKI , KIYOUDA TAMAHIKO , ARAKAWA HIDETOSHI
IPC分类号： H01L21/762 , H01L21/8249 , H01L27/06 , H01L29/06 , H01L29/739 , H01L29/872 , H02M7/00 , H02M7/5387 , H02P6/06 , H02P6/08
摘要： PURPOSE:To shorten the length of wiring and to prevent erroneous function due to noise by integrating an inverter circuit and driving circuits therefor on one semiconductor substrate. CONSTITUTION:An inverter circuit and driving circuits DA1-DA6 are integrated on one semiconductor substrate. A plurality of switching elements Q1-Q6 and diodes D1-D6 constituting an inverter circuit are formed individually in respective island areas on a dielectrically isolated substrate, and the driving circuits DA1-DA6 are formed in island regions while being classified arbitrarily or according to the operating voltage. The semiconductor integrated circuit is employed at a part of a device which converts DC power into AC power having desired voltage and frequency and feeding AC power to a motor.

4. 发明专利

DE3564894D1 SWITCH MODE POWER SUPPLY HAVING MAGNETICALLY CONTROLLED OUTPUT 未知
公开(公告)号：DE3564894D1
公开(公告)日：1988-10-13
申请号：DE3564894
申请日：1985-01-22
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： ABE KOZIN , ONDA KENICHI , YABUNO KOHEI , NAKAJIMA SHIN , OGAWA NOBORU
IPC分类号： G05F1/38 , H02M1/40 , H02M3/335
摘要： A magnetically controlled switching regulator which con- irols an output voltage using a saturable reactor (16), wherein the saturable reactor is constituted by a first winding (17) through which an output current flows and a second winding (18) through which a reset current flows. The energy for resetting the saturable reactor is supplied from a capacitor (9) in a smoothing circuit for an output voltage. A turn ratio between the first and second windings is set so that a sufficiently high reset voltage is obtained. Since the rest current of the saturable reactor does not flow through a transformer (2), the saturation of the transformer and high increase in temperature thereof do not occur, so that the core of the transformer can be miniaturized and high gain of the output voltage control circuit (11) can be derived.

5. 发明专利

DE69434281T2 未知
公开(公告)号：DE69434281T2
公开(公告)日：2006-05-04
申请号：DE69434281
申请日：1994-12-21
申请人： HITACHI LTD
发明人： TAKAHASHI TADASHI , ONDA KENICHI , KANOUDA AKIHIKO , SATO MASAYOSHI , HORIE HIDEAKI , HAYASHI KATSUNORI
IPC分类号： H02J1/12 , H02J3/46 , G05F1/577 , H02J1/10 , H02M3/28 , H02M7/08 , H02M7/12 , H02M7/217 , H02M7/493

6. 发明专利

DE3586157T2 未知
公开(公告)号：DE3586157T2
公开(公告)日：1992-12-17
申请号：DE3586157
申请日：1985-09-02
申请人： HITACHI LTD
发明人： ONDA KENICHI , ABE KOJIN
IPC分类号： H02M3/28 , H02M3/335
摘要： A compact multiple output switching power supply having a series connection of a D.C. input power supply (E), a switching device (0) and a primary winding (np) of a transformer (T 1 ) which supplies currents to loads during an on period of the switching device, and supplies constant output voltages V i (i = 1, 2, ..., m) from m (m ≧ 2) secondary windings n i (i = 1, 2, ..., m) of the transformer by turning on and off the switching device, includes means (T 2 ) for storing a magnetic energy during the on period of the switching device and discharging the stored energy to the loads during on off period, connected in series with the primary winding of the transformer. The output voltage V, (j = 2, 3, ..., m) is represented bywhere k j is a voltage drop in the circuit.

7. 发明专利

GB2214745B CURRENT SENSING CIRCUIT FOR A POWER SEMICONDUCTOR DEVICE 未知
公开(公告)号：GB2214745B
公开(公告)日：1992-09-02
申请号：GB8901855
申请日：1989-01-27
申请人： HITACHI LTD
发明人： MIYAZAKI HIDEKI , KANOUDA AKIHIKO , ONDA KENICHI , MATSUDA YASUO
IPC分类号： G05F3/16 , G05F1/10 , H02M1/00 , H03F1/52 , H03K17/082
摘要： A current sensing circuit for sensing a main current flowing through a power semiconductor element or elements, by utilizing a second current which is small in magnitude compared to the main current and varies depending on the main current, and sensing the second current through a current mirror circuit as a bias current of a differential circuit, and a function of sensing the temperature of the semiconductor element being afforded to the current sensing circuit through selection of a bias voltage.

8. 发明专利

GB2248739A Solid state current sensing circuit 未知
公开(公告)号：GB2248739A
公开(公告)日：1992-04-15
申请号：GB9121755
申请日：1991-10-14
申请人： HITACHI LTD
发明人： MIYAZAKI HIDEKI , KANOUDA AKIHIKO , ONDA KENICHI , MATSUDA YASUO
IPC分类号： H03K17/082
摘要： In a current sensing circuit for sensing a main current (I1 I2) flowing through a power semiconductor element or elements (1, 2), by utilizing a second current (12) which is small in magnitude compared to the main current and varies depending on the main current, the second current is compared with a reference current in an arrangement including the series connection of the conducting paths of two transistors 4, 5 and a voltage indicative of the comparison is derived at the junction of the two conducting paths. This voltage may be applied via control circuitry (not shown) to determine the value of load current flowing in power semiconductor element 1. Protection of the element 1 from over-current or current increase with temperature is referred to. The circuitry includes current mirrors 3, 4; 5, 6 may be formed on the same integrated circuit.

9. 发明专利

CA1128996A GATE CIRCUIT FOR A GATE TURN-OFF THYRISTOR 未知
公开(公告)号：CA1128996A
公开(公告)日：1982-08-03
申请号：CA330185
申请日：1979-06-20
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： ONDA KENICHI , TASHIRO SADAJI , AMANO HISAO
IPC分类号： H03K17/732 , H03K17/04 , H03K17/723 , G05F1/44 , G05F1/66
摘要： A gate circuit for a gate turn-off (GTO) thyristor comprises current supply means for supplying a turn-off current to the GTO thyristor, and energy storing means for storing energy by receiving a current from the current supply means and supplying the stored energy to the GTO thyristor as the turn-on current therefor.

10. 发明专利

FR2418569A1 未知
公开(公告)号：FR2418569A1
公开(公告)日：1979-09-21
申请号：FR7904758
申请日：1979-02-23
申请人： HITACHI LTD
发明人： ONDA KENICHI , TOKUNAGA NORIKAZU
IPC分类号： H02M1/06 , H02M1/08
摘要： The positive terminal of a series circuit consisting of two capacitors is connected with the cathode of a field controlled thyristor through a resistor and a transistor and the negative terminal thereof is connected with the gate of the field controlled thyristor. The junction of the series circuit is connected with the cathode of the field controlled thyristor through a thyristor. Each capacitor is charge by d.c. current. When the field controlled thyristor is intended to be turned off, the thyristor and the transistor are first made conductive and then the one capacitor is discharged through the thyristor. As a result, the field controlled thyristor is turned off. After the turn-off of the field controlled thyristor, the voltage of the other capacitor is applied to the gate of the field controlled thyristor to hold it in the blocking state.

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