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    • 1. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS63107127A
    • 1988-05-12
    • JP25174486
    • 1986-10-24
    • HITACHI LTDHITACHI COMPUTER ENG
    • KOBAYASHI ISAOYAMADA TAKEO
    • H01L21/60
    • PURPOSE:To improve reliability without an insulating film, which is yielded at a junction between different kinds of metals, or without the yield of electrically nonconducting surface, by bonding two Si chips in a form of Al pads, Al conductor parts and Al bumps. CONSTITUTION:Through holes are provided in a passivation film 2 of an upper chip 1. Al conductor parts 3 are formed in the through holes. The Al conductor parts 3 are connected to an inner Al electrode wiring 4 in said chip 1. Through holes are likewise provided in a passivation film 8 at the surface of a lower chip 7. Al conductor parts 9 are formed in the through holes. The Al conductor parts 9 are connected to an inner Al electrode wiring 10 in said chip 7. Al bumps 13 and 14 are formed on the surface of the chips 1 and 7. Heat and pressure are applied on the upper and lower chips 1 and 7 at a high temperature of 590-610 deg.C in a high vacuum state of 10 -10 torr. Then a chip-bonded product, in which the chip 1 and the chip 7 are rigidly bonded, is obtained.