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1. 发明专利

JPS649446A PATTERN FORMING PROCESS 失效
公开(公告)号：JPS649446A
公开(公告)日：1989-01-12
申请号：JP16391887
申请日：1987-07-02
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , CHOKAI MINORU , IWAYAGI TAKAO , HASHIMOTO MICHIAKI , MORISHITA HAJIME
IPC分类号： G03F7/26 , G03F7/00 , G03F7/095
摘要： PURPOSE:To improve resolution of a pattern and to obtain sufficiently high contrast by using a photosensitive layer contg. an aromatic diazonium salt and a high molecular compd. CONSTITUTION:A photosensitive layer (A) which is discolored by exposure is formed on a photoresist layer after forming the photoresist layer on a substrate (e.g. silicon wafer). Then, an exposed part of the layer (A) is made transparent by irradiating the layer (A) with far ultraviolet rays through a specified pattern. Then, the resist layer is exposed by irradiating the whole surface of the resist layer with light having longer wavelength than said far ultraviolet rays using the unexposed part of the above described photosensitive layer (A) as mask. The layer (A) is removed and the resist layer is developed, and a pattern is formed. In this process, it is preferred that a water-soluble aromatic diazonium salt (e.g. compds. expressed by the formula) and a water-soluble high molecular compd. [e.g., poly(N-vinyl pyrrolidone)] are used for the layer (A). In the formula, each R1-R4 is H, alkyl, etc.; X is Cl, BF4, etc.

2. 发明专利

JPH03145647A PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THIS COMPOSITION 失效
公开(公告)号：JPH03145647A
公开(公告)日：1991-06-20
申请号：JP28297889
申请日：1989-11-01
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： TADANO KEIKO , CHOKAI MINORU
IPC分类号： G03F7/008 , H01L21/027
摘要： PURPOSE:To form patterns of a high resolution and to improve dimensional controllability by specifying the coefft. of absorption of a coated film to a 0.1 to 1.5/mum range and exposing the film with light of a prescribed short wavelength, then developing the film. CONSTITUTION:In the negative type photosensitive compsn. contg. an azide compd., a sensitizer and a high-polymer compsn., the photosensitive compsn. is small in absorption at the exposing wavelength and the chemical reaction of the azide compd. is induced by the sensitizer having the absorption at the exposing wavelength. In addition, the coefft. of light absorption of the coated film is in a 0.1 to 1.5/mum range. Namely, the azide compd. is small in absorption at the exposing wavelength and, therefore, the lowering of the coefft. of the light absorption of the resist is easy and further, the selection of the azide compd. is possible without receiving the restriction of the optical characteristics of the resist. The end part of the sectional shape of the coated film after the exposing and developing is perpendicular to the surface and the dimensional controllability is good when the coefft. of absorption of the coated film is in the 0.1 to 1.5/mum range.

3. 发明专利

JPH02162351A PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME 失效
公开(公告)号：JPH02162351A
公开(公告)日：1990-06-21
申请号：JP31640188
申请日：1988-12-16
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UENO TAKUMI , CHOKAI MINORU , NONOGAKI SABURO , HASHIMOTO MICHIAKI , HAYASHI NOBUAKI , TADANO KEIKO , IWAYAGI TAKAO
IPC分类号： C07C309/76 , G03F7/008 , G03F7/012 , H01B5/14 , H01B13/00 , H01L21/027
摘要： PURPOSE:To enhance resolution and sensitivity to light having short wavelength by specifying the absorption coefft. of a coating film of a compsn. contg. a specified compd. at a prescribed wavelength. CONSTITUTION:When a pattern is formed with an alkali-soluble negative type photosensitive compsn. (B) contg. a compd. (A) having azidobenzenesulfonic ester, the absorption coefft. of a coating film of the compsn. A at 248nm is regulated to 0.5-1.5mum. An azido compd. represented by the formula (where X is H,

4. 发明专利

JPH02120366A RADIATION-SENSITIVE COMPOSITION AND FORMATION OF PATTERN BY USING SAME 失效
公开(公告)号：JPH02120366A
公开(公告)日：1990-05-08
申请号：JP27297788
申请日：1988-10-31
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HAYASHI NOBUAKI , SHIRAISHI HIROSHI , AOKI EMIKO , CHOKAI MINORU , UENO TAKUMI , TADANO KEIKO , HASHIMOTO MICHIAKI , IWAYAGI TAKAO
IPC分类号： C08K3/16 , C08K5/41 , C08K5/42 , C08L101/00 , H01B5/14
摘要： PURPOSE:To obtain the title composition which has excellent sensitivity to actinic radiations such as short-wavelength ultraviolet rays, electron beams and X-rays and can give a high-resolution negative resist by mixing a compound which can generate a specified acid when irradiated with an alkali-soluble resin and a crosslinking agent. CONSTITUTION:A compound which generates trifluoromethane-sulfonic acid, trifluoroacetic acid or toluenesulfonic acid when irradiated, desirably, a sulfonium salt or a iodonium salt (e.g., diphenyliodonium trifluoromethanesulfonate) is mixed with an alkali-soluble resin (e.g., polyvinylphenol resin) and a crosslinking agent which can crosslink an alkali- soluble resin in the presence of an acid (e.g., a mixture of mono-, di- and tri- methylolphenol allyl ethers).

5. 发明专利

JPH0480757A PATTERN FORMING METHOD 失效
公开(公告)号：JPH0480757A
公开(公告)日：1992-03-13
申请号：JP19299890
申请日：1990-07-23
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , CHOKAI MINORU , UENO TAKUMI , IWAYAGI TAKAO
IPC分类号： G03F7/008 , G03F7/038 , H01B13/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To enable a fine line pattern having a rectangular cross section to be formed by using a photosensitive material made of an azido compound having a specified biphenyl skeleton and a phenol resin. CONSTITUTION:The photosensitive composition layer comprising the alkali- soluble phenol resin and the azido compound having a biphenyl skeleton represented by formula I formed on the substrate to be processed is exposed to the i-line of the bright lines of mercury through a photomask to transfer a pattern and developed with a aqueous alkaline solution. In formula I, each of R1 - R4 and R'1 - R'4 is, independently, H, OH, methyl, methoxy, azido, or halogen, thus permitting a fine negative pattern having a rectangular cross section to be formed by using the i-line reduction projection exposing device.

6. 发明专利

JPH02216153A PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH02216153A
公开(公告)日：1990-08-29
申请号：JP3620089
申请日：1989-02-17
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： CHOKAI MINORU , NONOGAKI SABURO
IPC分类号： G03F7/008 , G03F7/022 , H01L21/027
摘要： PURPOSE:To lessen the film decrease of a coating film after development of a negative type photosensitive compsn. by incorporating a specific arom. azide compd. therein. CONSTITUTION:The title compsn. of the negative type is formed of the arom. azide compd. (A) expressed by formula I and an alkaline soluble high-polymer compd. (B). In the formula, at least either of X, Y denotes 3 to 7C straight chain or branched chain hydrocarbon group and the other denotes H; 4-azide phenyl sulfonic acid 4'-pentyl phenyl ester or the like is usable as the component A. One or more kinds of the condensation reaction product of phenols and formaldehyde and hydroxystyrene polymer {e.g.: poly(4-hydroxystyrene)} are preferably used for the component B.

7. 发明专利

JPH02170165A RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THIS COMPOSITION 失效
公开(公告)号：JPH02170165A
公开(公告)日：1990-06-29
申请号：JP32361688
申请日：1988-12-23
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HASHIMOTO MICHIAKI , TADANO KEIKO , CHOKAI MINORU , IWAYAGI TAKAO , SHIRAISHI HIROSHI , HAYASHI NOBUAKI
IPC分类号： G03F7/004 , H01B5/14 , H01L21/027
摘要： PURPOSE:To enhance the sensitivity and resolution to active radiations of the compsn. and to shorten the time for baking after exposing by using a prescribed compd. which generates an acid by irradiation of radiations and a prescribed phenolic resin. CONSTITUTION:This compsn. consists of the compd. (A) which generates an acid by irradiation of the radiations and the alkali soluble phenolic resin (B) contg. a methoxymethyl group or/and methylol group. After the above-mentioned compsn. is applied on the substrate and is prebaked, patterns are transferred thereto by irradiation of the radiations. The compsn. is then developed with an alkaline developing soln. to obtain the negative type patterns. An onium salt, such as diaryl iodonium salt is usable for the component A and an alkaline soluble high-polymer compd. contg. the unit expressed by the formula is preferably used for the component B. In the formula R denotes H, methyl; n, m denotes 1, 2.

8. 发明专利

JPH02173647A PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD USING THE SAME 失效
公开(公告)号：JPH02173647A
公开(公告)日：1990-07-05
申请号：JP32778188
申请日：1988-12-27
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SHIRAISHI HIROSHI , UENO TAKUMI , HAYASHI NOBUAKI , AOKI EMIKO , CHOKAI MINORU
IPC分类号： G03F7/075 , H01B5/14 , H01B13/00 , H01L21/027
摘要： PURPOSE:To improve sensitivity and resolution of the above pattern forming material by incorporating a specified silanol compd. and a silanol precursor for generating acid into the material. CONSTITUTION:A silanol compd. (A) having in average >= one OH group bonded to an Si atom, and a precursor (B) generating an acid by the irradiation with active chemical rays, are contained in the subject pattern forming material. Cis(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenyl cyclotetrasiloxane, etc., is used as the component (A), and an onium salt such as trifluoromethane sulfonic acid triphenyl sulfonium is used as the component (B). It is also preferred that an alkali-soluble resin (e.g. m-cresol-novolak resin) is contained in the pattern forming material.

9. 发明专利

JPH02150846A PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH02150846A
公开(公告)日：1990-06-11
申请号：JP30415188
申请日：1988-12-02
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： CHOKAI MINORU
IPC分类号： G03F7/008 , G03F7/012 , H01B5/14 , H01B13/00 , H01L21/027
摘要： PURPOSE:To decrease the film thinning of a resist at the time of development and to obtain good patterns by forming the compsn. of an arom. azide compd., epoxy compd. and alkali soluble high-polymer compd. CONSTITUTION:This compsn. consists of the arom. azide compd., the epoxy compd. and the alkali soluble high-polymer compd. To be exact, the content of the azide compd. varies slightly with the sensitivity characteristics, optical characteristics, etc., of the compd. and is generally preferably in the range of about 1 to 40wt.% of the total weight. The concn. of the epoxy compd. may be in the entire range of 1 to 90wt.% of the total weight of the photosensitive compsn. with respect to the desired properties of the photosensitive compsn. The arom. azide compd. which is the photosensitive agent of the negative type photoresist is made into an amine compd. by exposing. The ring opening reaction of the epoxy compd. is induced by the amine compd. generated by this photochemical reaction, by which the epoxy compd. is sufficiently crosslinked in the resist. The film thinning of the resist at the time of the development is thus suppressed and the good exposing and developing characteristics are obtd.

10. 发明专利

JPH01241543A NEGATIVE TYPE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH01241543A
公开(公告)日：1989-09-26
申请号：JP6908288
申请日：1988-03-23
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： CHOKAI MINORU , HAYASHI NOBUAKI , HASHIMOTO MICHIAKI , UENO TAKUMI , IWAYAGI TAKAO
IPC分类号： G03F7/008
摘要： PURPOSE:To make possible to form a pattern having high resolution by exposing and developing the title composition by specifying the product of the film thickness (micron unit) of a coated film and the extinction of the coated film at a prescribed short wavelength to a range of 0.5-1.5, and by exposing the composition with a light having the prescribed short wavelength. CONSTITUTION:The negative type photosensitive composition which is specified in the product of the film thickness (the micron unit) of the coated film composed of the photosensitive composition and the extinction at 248nm to the range of 0.5-1.5, and the photosensitive composition contg. an aromatic azide compd. and a polymer compd. are applied on a substrate to form the coated film, and then the obtd. film is exposed to obtain a prescribed pattern, followed by developing to form a prescribed negative type pattern. The coated film has the product of the film thickness (the micron unit) and the extinction at the prescribed short wavelength of the range of 0.5-1.5. The exposure of the composition is effected by the light having the short wavelength. Thus, the pattern having the high resolution can be obtd.

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