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1. 发明公开

EP1947439A4 SEMICONDUCTOR PRESSURE SENSOR 有权
标题翻译：半导体压力传感器
公开(公告)号：EP1947439A4
公开(公告)日：2009-07-01
申请号：EP05800425
申请日：2005-11-01
申请人： HITACHI LTD , FUJI ELEC DEVICE TECH CO LTD
发明人： KAMINAGA TOSHIAKI , HAYASHI MASAHIDE , UEYANAGI KATSUMICHI , SAITO KAZUNORI , NISHIKAWA MUTSUO
IPC分类号： G01L9/00 , G01L19/06 , H01L29/84
CPC分类号： G01L15/00 , G01L19/0038 , G01L19/0084 , G01L19/0627 , G01L19/141 , G01L19/147 , H01L2224/05553 , H01L2224/45124 , H01L2224/45144 , H01L2224/48465 , H01L2924/01004 , H01L2924/01013 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/00
摘要： This invention provides a semiconductor pressure sensor which can solve a problem that, when the pressure of a pressure medium containing a corrosive substance such as exhaust gas is measured with a semiconductor pressure sensor, an aluminum electrode, an aluminum wire, and an input/output terminal are attacked by a corrosive gas, thereby improving the corrosion resistance of a sensor chip, and, at the same time, can particularly improve the corrosion resistance of a part as a pressure-sensitive part. The corrosion of an electrode is prevented by providing titanium tungsten layer and a gold layer on an aluminum electrode as a corrosion site. The corrosion of a connection wire by a corrosive substance can be prevented by using a gold wire as the connection wire. The corrosion of an input/output terminal can be prevented by plating the input/output terminal with gold.

2. 发明专利

AT545008T 未知
公开(公告)号：AT545008T
公开(公告)日：2012-02-15
申请号：AT05800425
申请日：2005-11-01
申请人： HITACHI LTD , FUJI ELECTRIC CO LTD
发明人： KAMINAGA TOSHIAKI , HAYASHI MASAHIDE , UEYANAGI KATSUMICHI , SAITO KAZUNORI , NISHIKAWA MUTSUO
IPC分类号： G01L9/00 , G01L19/06 , H01L29/84
摘要： An object of the present invention is to solve problems in that aluminum electrodes, aluminum wires, and I/O terminals are corroded by corrosive gasses when a pressure of a pressure medium containing corrosive matters such as exhaust gas is measured with a semiconductor sensor; and improve not only the corrosion resistance of the sensor chip but also the corrosion resistance of the portion particularly functioning as the pressure receiver. Each of the aluminum electrodes that is likely to be corroded portions is prevented from being corroded by forming a titanium-tungsten layer and gold layer on the aluminum electrode. The connecting wires are prevented from being corroded by corrosive matters by using gold wires. The I/O terminals are also prevented from being corroded by applying gold plating.

3. 发明专利

DE4132105C2 未知
公开(公告)号：DE4132105C2
公开(公告)日：1997-09-04
申请号：DE4132105
申请日：1991-09-26
申请人： HITACHI LTD , HITACHI AUTOMOTIVE ENG
发明人： KOIDE AKIRA , SATO KAZUO , SUZUKI SEIKO , ICHIKAWA NORIO , OBAYASHI HIDEHITO , HAYASHI MASAHIDE
IPC分类号： G01P15/125 , B81B3/00 , H01L21/306 , H01L21/308 , H01L29/84 , G01P15/00 , G01L7/00 , C23F4/00
摘要： A method of manufacturing structures such as a pressure gauge, an accelerometer and the like with a single crystal material such as silicon uses etching techniques where the shape of a part subjected to stress concentration has a curvature, another part is formed in a plane body and a polyhedron is constituted by combining both. To attain the above constitution, a wafer of single crystal material is formed with a stepped surface having a value corresponding to at least the depth of the curvature in a first anisotropic etching process using a prescribed etching mask, and in a second anisotropic etching process, an etching mask is used by removing at least a part of the etching mask used in the first anisotropic etching process.

4. 发明专利

DE602008001585D1 Physikalischer Sensor und Herstellungsverfahren 未知
公开(公告)号：DE602008001585D1
公开(公告)日：2010-08-05
申请号：DE602008001585
申请日：2008-07-15
申请人： HITACHI LTD
发明人： SUZUKI KENGO , HARADA TAKESHI , OSONE YASUO , HAYASHI MASAHIDE , AKASHI TERUHISA
IPC分类号： G01P15/08 , B81B7/00 , B81C1/00 , G01C19/56 , G01C19/574 , G01C19/5747 , G01C19/5769 , H01L23/02 , H01L29/84

5. 发明专利

DE10392224T5 Drucksensor, Elektroikkomponente für Durchflussmesser und Verfahren zum Herstellen derselben 未知
公开(公告)号：DE10392224T5
公开(公告)日：2011-06-16
申请号：DE10392224
申请日：2003-01-17
申请人： HITACHI LTD
发明人： HAYASHI MASAHIDE , KIKUCHI KATSUHIKO , EBINE HIROMICHI
IPC分类号： G01L19/14 , G01L9/00 , G01L19/00 , H01L23/29 , H01L23/31 , H01L29/84

6. 发明专利

DE4132105A1 Prodn. of curved structure for e.g. semiconductor accelerometer - comprises two=stage anisotropic etching of wafer using different masks 未知
公开(公告)号：DE4132105A1
公开(公告)日：1992-04-09
申请号：DE4132105
申请日：1991-09-26
申请人： HITACHI LTD , HITACHI AUTOMOTIVE ENG
发明人： KOIDE AKIRA , SATO KAZUO , SUZUKI SEIKO , ICHIKAWA NORIO , OBAYASHI HIDEHITO , HAYASHI MASAHIDE
IPC分类号： G01P15/125 , B81B3/00 , H01L21/306 , H01L21/308 , H01L29/84
摘要： A structure prodn. process, in which a wafer is etched to produce a structure with a curvature in the thickness of the surface direction, involves (i) anisotropically etching using a prescribed etch mask (302) to form a stepped surface which, for a thickness direction curvature, has dimensions at least corresponding to the depth of the curvature (203); and (ii) anisotropically etching using an etch mask (303) to remove at least part of the first etch mask (302). Also claimed are superconductor accelerometers and their prodn. processes, pressure sensors and their prodn. processes, and a structure which consists of a frame and a thinner internal portion, one end of the frame being fixed to (part of) the internal portion by a polyhedral fixing portion which has a curvature (203) at least in the thickness direction and which has flat other surfaces. USE/ADVANTAGE - The process is esp. useful in prodn. of semiconductor accelerometers and pressure sensors. Curvatures are produced at the requisite regions and with high precision in single crystal material without the use of chemical isotropic etching.

7. 发明专利

JP2009027016A Physical quantity sensor, and manufacturing method thereof 有权
标题翻译：物理量传感器及其制造方法
公开(公告)号：JP2009027016A
公开(公告)日：2009-02-05
申请号：JP2007189657
申请日：2007-07-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SUZUKI KENGO , HARADA TAKESHI , OSONE YASUO , HAYASHI MASAHIDE , AKASHI TERUHISA
IPC分类号： H01L29/84 , G01C19/56 , G01P9/04 , G01P15/08 , H01L23/02
CPC分类号： G01P15/0802 , B81B2207/096 , B81C1/00301 , G01C19/5719
摘要： PROBLEM TO BE SOLVED: To ensure long-term reliability and allow miniaturization and high density in a physical quantity sensor. SOLUTION: The physical quantity sensor 50 is provided with a supporting substrate 2; an element substrate 1 which has a sensor element 30 and is joined to the supporting substrate 2 through an insulating layer 3; a glass cap 12 which covers the area of the sensor element 30 and is joined to the element substrate 1; and a through wiring 10 which is electrically connected to the sensor element 30. The through wiring 10 is formed in a through hole passing through the element substrate 1, the insulating layer 3 and the supporting substrate 2. A portion of the glass cap 12 which covers an area of the through wiring 10 is anodically bonded to the element substrate 1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：确保物理量传感器的长期可靠性并实现小型化和高密度化。物理量传感器50设置有支撑基板2; 元件基板1，其具有传感器元件30，并通过绝缘层3接合到支撑基板2; 覆盖传感器元件30的区域并与元件基板1接合的玻璃盖12; 以及与传感器元件30电连接的贯通布线10.贯通布线10形成在穿过元件基板1，绝缘层3和支撑基板2的通孔中。玻璃盖12的一部分覆盖通孔布线10的区域阳极结合到元件基板1.版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007071677A Combined sensor and manufacturing method therefor 审中-公开
标题翻译：组合传感器及其制造方法
公开(公告)号：JP2007071677A
公开(公告)日：2007-03-22
申请号：JP2005258652
申请日：2005-09-07
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： AKASHI TERUHISA , OKADA RYOJI , HAYASHI MASAHIDE , SUZUKI KENGO
IPC分类号： G01C19/56 , G01C19/574 , G01C19/5747 , G01P15/125 , G01P15/18 , H01L29/84
CPC分类号： G01P15/0802 , G01C19/5719 , G01P15/097 , G01P15/14 , G01P15/18 , G01P2015/082
摘要： PROBLEM TO BE SOLVED: To provide a sensor structure using an oscillation body capable of detecting an angular velocity and a biaxial acceleration at the same time, sensor structure allowing individual differences caused by a working error of the oscillation body; and also to provide sensor structure of high impact resistance.
SOLUTION: This combined sensor is provided with two sets of oscillation units tune-fork-oscillated and comprising four substantially same-shaped oscillation bodies supported on a substrate under an oscillatable condition, and the oscillation bodies are arranged to make an oscillation shafts of the oscillation units orthogonal each other. The each oscillation body is provided with a pair of detecting means and a regulation means for regulating a frequency of vibration, and the each oscillation body is provided with support structure supported independently not to bring the oscillation bodies into mutual interference, in the combined sensor.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供使用能够同时检测角速度和双轴加速度的振动体的传感器结构，允许由振荡体的工作误差引起的个体差异的传感器结构; 并且还提供具有高抗冲击性的传感器结构。解决方案：该组合传感器具有两组摆动摆动的振荡单元，并且包括在振荡状态下支撑在基板上的四个基本上相同形状的振荡体，并且摆动体设置成形成振荡轴的振荡单元彼此正交。每个振动体设置有一对检测装置和用于调节振动频率的调节装置，并且每个振动体设置有独立支撑的支撑结构，不会使振动体相互干扰。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JPH07263709A DYNAMIC QUANTITY SENSOR AND AIRBAG SYSTEM 失效
公开(公告)号：JPH07263709A
公开(公告)日：1995-10-13
申请号：JP4678494
申请日：1994-03-17
申请人： HITACHI LTD , HITACHI AUTOMOTIVE ENG
发明人： HORIE JUNICHI , SUZUKI MASAYOSHI , ICHIKAWA NORIO , HAYASHI MASAHIDE
IPC分类号： G01P15/125 , B60R21/16 , G01P15/08 , H01L29/84 , B60R21/32
摘要： PURPOSE:To cut down the cost of the title system in which a dynamical variable sensor is used by a method wherein the continuity from the inside of a hermeticaly sealed detection part is obtained by having a low-priced, highly reliable and highly efficient structure. CONSTITUTION:A weight 3, which moves up and down by accelerated inertia, an elastic part 4 which supports the weight and a conductive pole 6 are formed by anisotropic etching an intermediate conductor 2 consisting of n-type single crystal. An upper electrode 5b, consisting of two-layer structure of aluminum and molibdenum, is formed on the upper insulator 1a opposing to the weight 3 using a photolithographic processing in such a manner that the upper electrode 5b is conductive to the conductive pole 6. A lower insulator 1b consists of a Pyrex 7740 same as the upper insulator 1a, and a lower electrode 5a is formed by the material and process same as the upper electrode 5b. In order to obtain conduction from the internal part of a sensor, aluminum conductors 8a, 8b, 10a and 10b are formed by a vapor deposition method and a sputtering method wherein a metal mask is used on the surface of impurity layers 7a, 7b, hole parts 9a and 9b, and the upper insulator 1a.

10. 发明专利

JPH07113817A ACCELERATION SENSOR 失效
公开(公告)号：JPH07113817A
公开(公告)日：1995-05-02
申请号：JP25801793
申请日：1993-10-15
申请人： HITACHI LTD , HITACHI AUTOMOTIVE ENG
发明人： EBINE HIROMICHI , HAYASHI MASAHIDE
IPC分类号： G01P15/125 , B81B3/00 , G01P15/08 , H01L29/84
摘要： PURPOSE:To provide a semiconductor capacitive acceleration sensor with a highly reliable through-hole part which is manufactured with an excellent yield. CONSTITUTION:In the acceleration sensor, a mass part, (movable electrode) 2 and a silicon plate 1 of a single crystal with a cantilever 3 are held between glass plates 4 and 5 having fixed electrodes 6 and 7. That is, the acceleration sensor is in a structure of three layers. A through-hole part 9 is provided at a connecting path from the fixed electrode 6 to a wire bonding pad 11. A reinforced part of a conductive film is set at a part of an electrode lead part 8 including the through-hole part 9. Therefore, the conductive film is sufficiently secured at an inner wall of the through-hole part 9 in the connecting path to the wire bonding pad 11 without thickening the fixed electrode 6 to a required thickness or larger. A disconnection or inferior connection at the through hole part 9 is restricted.

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