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1. 发明专利

JPS54152866A SEALING CUT METHOD FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS54152866A
公开(公告)日：1979-12-01
申请号：JP6095878
申请日：1978-05-24
申请人： HITACHI LTD
发明人： TAKAHASHI WASABUROU , TAKAHOSHI ATSUSHI , NAKASHIMA YOUICHI
IPC分类号： H01L23/48
摘要： PURPOSE:To prevent occurrence of the slow leak by drawing out the lead wire to outside from the semiconductor element sealed within the insulated container through the pipe and then giving the sealing cut to the pipe and lead wire after the diameter reduction is given through the pinch welding. CONSTITUTION:Semiconductor element 1 is stuck onto basement boad 2 made of Cu and then enclosed by insulated container 3, and gate wire 4 provided to element 1 is made to pierce through gate pipe 5 and then drawn outside conatiner 3 and to be connected to gate terminal wire 7. In this case, sealing cut part 6 is formed in the middle of wire 7 to prevent the leak of the inactive gas enclosed into the container. At the same time, cathode terminal wire 8 provided to element 1 is also led outside container 3. In such constitution, part 6 is formed in the following method: Al wire 12 (gate wire) is made to pass through Ni pipe 11 as shown in the diagram; the diameter reduction is given to both pipe 11 and wire 12 by means of pinch welding electrode 16; wire 12 protruded from the pinch welding part is cut off: pinch welding 17 is given again; and the sealing cut is given to pipe 11 to be welded.

2. 发明专利

JPS51118964A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS51118964A
公开(公告)日：1976-10-19
申请号：JP4330175
申请日：1975-04-11
申请人： HITACHI LTD
发明人： TAKAHOSHI ATSUSHI , HOSAKA KENICHI , TOIDA MINORU , NISHIYAMA TATSUO , MURAKAMI MASAHIRO
IPC分类号： H01L23/04 , H01L23/02
摘要： PURPOSE:Stad-type semiconductor device like a rectifier which doesn't need a special construction for forming an airtighten container and has a large effect diameter of attaching face of a semiconductor base.

3. 发明专利

JPS5129090A 失效
公开(公告)号：JPS5129090A
公开(公告)日：1976-03-11
申请号：JP10204774
申请日：1974-09-06
申请人： HITACHI LTD
发明人： HOSAKA KENICHI , URA MITSURU , WADA SUNAO , TAKAHOSHI ATSUSHI
IPC分类号： H01L21/306

4. 发明专利

JPS54159174A FLAT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS54159174A
公开(公告)日：1979-12-15
申请号：JP6764278
申请日：1978-06-07
申请人： HITACHI LTD
发明人： NEMOTO TOYOICHI , TAKAHOSHI ATSUSHI , HAISHI TSUNEO
IPC分类号： H01L21/52 , H01L21/58 , H01L23/48
摘要： PURPOSE:To prevent the surface movement of the buffer electrode plate with good accuracy, by simplifying the intermediate buffer electrode plate mating work to the upper electrode throught greater mating allowance and making free the stress of the mating part. CONSTITUTION:The diameter of the chip hole 2 of the upper electrode 1 is taken greater, the buffer pipe 9 such as Teflon is inserted, and the chip 3 fitted to the intermediate buffer electrode plate 4 is mated to the hole of the pipe 9. The mechanical stress at the mating part is mitigated with the elasticity of the pipe 9, and further, the size of elastic deformation of the pipe 9 can be within the mating allowance. Thus, the flat movement of the electrode plate 4 can be made slight, manufacture of components is made easy by enlarging the mating allowance, allowing to mating easily with good accuracy, because the pipe 9 is made of resin.

5. 发明专利

JPS5437681A FLAT TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5437681A
公开(公告)日：1979-03-20
申请号：JP10353777
申请日：1977-08-31
申请人： HITACHI LTD
发明人： TAKAHOSHI ATSUSHI
IPC分类号： H01L21/52 , H01L25/10
摘要： PURPOSE:To establish stable fixed condition, by preventing the flat movement of the thin plate intermediate cushion electrode plate, through the bonding of the fixed member, after separately machining the electrode plate, when providing the fixed member and the intermediate cushion electrode plate with a flat type semiconductor device.

6. 发明专利

JPS52142483A ELECTRODE STRUCTURE FOR SEMICONDUCTOR DEVICES 失效
公开(公告)号：JPS52142483A
公开(公告)日：1977-11-28
申请号：JP5854776
申请日：1976-05-21
申请人： HITACHI LTD
发明人： TAKAHOSHI ATSUSHI , HOSAKA KENICHI , NEMOTO TOYOICHI
IPC分类号： H01L21/52 , H01L23/48
摘要： PURPOSE:To obtain the electrode structure which may be simply and safely handled despite increase in diameter and weight by providing engaging parts to the portions other than substrate securing portions.

7. 发明专利

JPS5939059A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5939059A
公开(公告)日：1984-03-03
申请号：JP14755482
申请日：1982-08-27
申请人： Hitachi Ltd
发明人： MIKAMI SATOSHI , FUJII MASAMI , IIMURA KENJI , TAKAHOSHI ATSUSHI
IPC分类号： H01L25/07 , H01L23/538 , H01L25/18 , H02M7/04 , H02M7/12
CPC分类号： H01L23/5381 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To simplify the manufacture of the titled semiconductor device by a method wherein a cathode layer for thyristor pellet and an anode layer for diode pellet are connected to the prescribed conductive pattern using a crossover wire in such a manner that they constitute a bridge. CONSTITUTION:Thyristor pellets 14a and 14b, having the circumferential edge of anode layer extended on cathode side, are arranged in such a manner that the anode layer side will be brought to the side of conductive patterns 13a and 13b located on an insulating substrate. Diode pellets 15a and 15b are arranged in such a manner that the cathode layer side will be positioned on the side of the conductive patterns 13c and 13d located on the insulating plate, and the cathode layer of thyristor pellets 14a and 14d and the anode layer of the diode pellet 15 are connected to the prescribed conductive pattern 13 using a crossover wire in such a manner that they constitute a bridge.
摘要翻译：目的：为了简化标题半导体器件的制造，其中将晶闸管片的阴极层和二极管片的阳极层以构成桥的方式使用交叉电线连接到规定的导电图案。构成：具有在阴极侧延伸的阳极层的周缘的晶闸管片14a，14b以使得阳极层侧向位于绝缘基板上的导电图案13a，13b侧的方式配置。二极管片15a和15b以这样的方式排列，使得阴极层侧将位于位于绝缘板上的导电图案13c和13d的一侧，并且可控硅片14和14d的阳极层和二极管芯片15以构成桥的方式使用交叉线连接到规定的导电图案13。

8. 发明专利

JPS5548940A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5548940A
公开(公告)日：1980-04-08
申请号：JP10912079
申请日：1979-08-29
申请人： HITACHI LTD
发明人： SAKAI MINORU , TAKITA JIYUNICHI , AKABANE KATSUMI , TAKAHOSHI ATSUSHI , WAJIMA KOUICHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To simplify construction and obtain sufficient close contact, by providing a depressed part and a projected part respectively on the surfaces of contact of an internal buffer electrode and a copper cover placed on a semiconductor junction base constituting a planar type semiconductor device. CONSTITUTION:Junction support 6 is fixed on a base having copper base 4 via solder layer 5. On top of this is mounted semiconductor junction base 8. Next, on top of this is placed internal buffer electrode 2, and the junction surface of electrode 2 and base 8 is protected by stabilizer 13. A base having copper cover 1 is mounted on electrode 2 under pressure. The end parts of copper cover 1 and copper base 4 are sealed with ceramic seal 7, and thereby a planar semiconductor device is formed. In this structure, projected part 9 is provided on the lower surface of copper cover 1, and depressed part 10 on internal buffer electrode 2. By this, sufficient close contact can be obtained without using an ordinary fixing device.

9. 发明专利

JPS5441667A FLAT TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5441667A
公开(公告)日：1979-04-03
申请号：JP10773977
申请日：1977-09-09
申请人： HITACHI LTD
发明人： TAKAHOSHI ATSUSHI
IPC分类号： H01L21/52 , H01L25/10
摘要： PURPOSE:To prevent the plane movement of the intermediate buffer electrode plate having grater diameter and thin and heavy constitution.

10. 发明专利

JPS5164380A Suitsuchingusoshi 失效
公开(公告)号：JPS5164380A
公开(公告)日：1976-06-03
申请号：JP13817374
申请日：1974-12-02
申请人： Hitachi Ltd
发明人： HOSAKA KENICHI , TAKAHOSHI ATSUSHI
IPC分类号： H01L29/74 , H01L21/3205 , H01L21/60 , H01L23/52
CPC分类号： H01L2224/4847

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