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1. 发明专利

DE3206374A1 未知
公开(公告)号：DE3206374A1
公开(公告)日：1982-09-09
申请号：DE3206374
申请日：1982-02-22
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： SHIMAZU NOBUO , OKUBO TSUNEO , SAITOU NORIO , OZASA SUSUMU
IPC分类号： H01J37/147 , H01J37/153 , H01J37/304 , H01J37/305 , H01L21/027 , H01J37/21 , H05H7/00
摘要： A method and apparatus of deflection calibration for a charged particle beam exposure apparatus having an electromagnetic deflector and an electrostatic deflector both for deflecting a charged particle beam and a movable stage structure. The electromagnetic deflector is previously subjected to a calibration operation known per se. With a fiducial mark positioned in a predetermined location, the beam is deflected by the calibrated electromagnetic deflector instead of moving the stage structure, the beam is then deflected by the electrostatic deflector to detect the location of the fiducial mark, and deflection data are measured of the electrostatic deflection for the detection of the location of the fiducial mark. According to the present invention the calibration is performed in a short time without causing degradation of the precision of, e.g., lithography due to heat generated by movement of the stage structure.

2. 发明专利

DE3684228D1 未知
公开(公告)号：DE3684228D1
公开(公告)日：1992-04-16
申请号：DE3684228
申请日：1986-10-22
申请人： HITACHI LTD
发明人： SAITOU NORIO , OKUMURA MASAHIDE , KOMODA TSUTOMU , OOYAMA MITSUO
IPC分类号： H01J37/305 , H01J37/317 , H01L21/027 , H01J37/302
摘要： A charged particle beam lithography system has a high-throughput and inexpensive system configuration. The system configuration is constituted by a plurality of charged particle optical systems (17, 18, 19) each adapted to focus and deflect a beam of charged particles and irradiate the beam onto a specimen (10) so that the beam draws a desired pattern on the specimen, a plurality of deflection distortion correcting circuits (14, 15, 16) each associated with each of the charged particle optical systems for correcting a deflection distortion of each charged particle optical system, and a common pattern data control circuit (1, 3, 4) for supplying data of a pattern to be drawn to each of the plurality of deflection distortion correcting circuits.

3. 发明专利

DE19522362C2 未知
公开(公告)号：DE19522362C2
公开(公告)日：2002-03-14
申请号：DE19522362
申请日：1995-06-20
申请人： HITACHI LTD
发明人： SOHDA YASUNARI , OKUMURA MASAHIDE , SOMEDA YASUHIRO , SATOH HIDETOSHI , NAKAYAMA YOSHINORI , SAITOU NORIO
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/147 , H01J37/305 , H01L21/027 , H01J37/30
摘要： A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.

4. 发明专利

DE19522362A1 Electron beam printer esp. for high speed operation 未知
公开(公告)号：DE19522362A1
公开(公告)日：1996-01-11
申请号：DE19522362
申请日：1995-06-20
申请人： HITACHI LTD
发明人： SOHDA YASUNARI , OKUMURA MASAHIDE , SOMEDA YASUHIRO , SATOH HIDETOSHI , NAKAYAMA YOSHINORI , SAITOU NORIO
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/147 , H01J37/305 , H01L21/027 , B41J2/385
摘要： The printer has an electron beam source (6) and a group of lenses (8,9,12) for projecting a broad electron beam along a path to a specimen (15) on a table (60) so as to imprint the specimen with a pattern directly by the beam. At least one array (7,1) of linear blocking elements extends across the beam path. A voltage driver device (76,77) is connected to each blocking element. A controller (78) connected to the drivers generates print patterns on the specimen by selectively deflecting the beam parts passing between adjacent blocking devices. A stop (47) between the table and the array stops parts of the electron beam deflected by the blocking elements to prevent them printing on the specimen.

5. 发明专利

DE3279954D1 EXPOSURE METHOD WITH ELECTRON BEAM EXPOSURE APPARATUS 未知
公开(公告)号：DE3279954D1
公开(公告)日：1989-10-26
申请号：DE3279954
申请日：1982-06-08
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUDA TADAHITO , OKUBO TSUNEO , OZASA SUSUMU , SAITOU NORIO , YODA HARUO
IPC分类号： H01J37/304 , H01L21/027 , H01L21/30 , H01L23/544 , H01L21/00
摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate (1) such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate (1) having thereon a number of chips (2) are divided into blocks (3), marks (4) are provided on each of the blocks (3), the positions of the marks (4) are detected and the writing exposure positions of the chips (2) within each block (3) are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.

6. 发明专利

GB2125614A APPARATUS FOR ELECTRON BEAM LITHOGRAPHY 未知
公开(公告)号：GB2125614A
公开(公告)日：1984-03-07
申请号：GB8319949
申请日：1983-07-25
申请人： HITACHI LTD
发明人： SAITOU NORIO , OZASA SUSUMU , MATSUZAKS TAKASHI
IPC分类号： H01J37/30 , H01J37/317 , G03F7/20 , H01L21/027 , H01L21/30 , H01J37/141
摘要： An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.

7. 发明专利

DE3786866T2 未知
公开(公告)号：DE3786866T2
公开(公告)日：1993-11-11
申请号：DE3786866
申请日：1987-10-08
申请人： HITACHI LTD
发明人： OOYAMA MITSUO , ANDO KIMIAKI , KAWAMURA YOSHIO , SAITOU NORIO , SIMURA TAKANORI , KOHIDA HIROYUKI
IPC分类号： G02B5/18 , H01J37/302 , H01J37/305 , H01J37/317 , H01L21/027
摘要： There is disclosed a lithography apparatus in which a charged particle ray such as an electron beam or an ion beam is controlled to scan a desired region of a sample and thereby draw a pattern, comprising a framing pattern memory (4) for storing therein framing lines of a pattern to be drawn in the form of dot images, a framing pattern generator (3) for writing the framing lines of the pattern to be drawn into said framing pattern memory in the form of dot images, and a raster scanning circuit for drawing (5) for scanning said framing pattern memory having the framing lines of the pattern to be drawn written therein and for generating a beam deflection address for drawing (207, 208) and a beam blanking control signal (211).

8. 发明专利

GB2125614B APPARATUS FOR ELECTRON BEAM LITHOGRAPHY 未知
公开(公告)号：GB2125614B
公开(公告)日：1986-02-05
申请号：GB8319949
申请日：1983-07-25
申请人： HITACHI LTD
发明人： SAITOU NORIO , OZASA SUSUMU , MATSUZAKS TAKASHI
IPC分类号： H01J37/30 , H01J37/317 , G03F7/20 , H01L21/027 , H01L21/30 , H01J37/141
摘要： An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.

9. 发明专利

DE3163130D1 A METHOD FOR CORRECTING DEFLECTION DISTORTIONS IN AN APPARATUS FOR CHARGED PARTICLE LITHOGRAPHY 未知
公开(公告)号：DE3163130D1
公开(公告)日：1984-05-24
申请号：DE3163130
申请日：1981-01-22
申请人： HITACHI LTD
发明人： SAITOU NORIO , OZASA SUSUMU , KURODA KATSUHIRO
IPC分类号： H01L21/027 , H01J37/304 , H01L21/42
摘要： In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.

10. 发明专利

DE19544753C2 未知
公开(公告)号：DE19544753C2
公开(公告)日：2002-11-28
申请号：DE19544753
申请日：1995-11-30
申请人： HITACHI LTD
发明人： SOHDA YASUNARI , SOMEDA YASUHIRO , ITOH HIROYUKI , KAWASAKI KATSUHIRO , SAITOU NORIO
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027 , H01J37/30
摘要： An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam having a rectangular cross section; a second mask provided with a second rectangular aperture for passing the primary shaped beam to shape the primary shaped beam in a secondary shaped beam having a rectangular cross section, and triangular apertures for passing the primary shaped beam to form a secondary shaped beam having a triangular cross section; a first electron beam deflecting system for moving the primary shaped beam on the surface of the second mask; and a second electron beam deflecting system for moving the secondary shaped beam on the surface of a workpiece on which a pattern is to be written. Each of the triangular apertures is formed in a size such that the triangular aperture can be entirely covered with a rectangular image formed by the first shaped beam on the surface of the second mask.

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