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1. 发明专利

JPH0217664A RESIN MOLD TYPE SEMICONDUCTOR DEVICE FOR HIGH-FREQUENCY AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0217664A
公开(公告)日：1990-01-22
申请号：JP16809988
申请日：1988-07-06
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： OTOGURO MASATAKA , TANBARA HIDEO , NAKAGOME HIDEAKI , MOROSHIMA HEIJI , TERAKADO HAJIME
IPC分类号： H01L21/56 , H01L23/28
摘要： PURPOSE:To obtain a semiconductor device for high frequency by molding a semiconductor pellet and an inner lead to a resin mold package and setting the resin thickness of the package and a distance between the surface on the mounting substrate side of the pellet and a mounting surface to a mounting substrate at specific values. CONSTITUTION:In the example of a GaAs Schottky diode, inner leads 1a, a semiconductor pellet 2 and a bonding wire 3 are molded and sealed into a package 4 composed of an epoxy resin, etc. In the constitution, the thickness l1 of the package 4 is brought to 0.7mm or less. A distance between the surface on the mounting substrate 5 side of the pellet 2 and the mounting surface of a substrate 5, the height l2 of the pellet, is brought to 0.2mm or less. Accordingly, parasitic capacitance and parasitic reactance are reduced, and substantially the same high-frequency characteristics as a ceramic package is acquired.

2. 发明专利

JPS63293986A HALL ELEMENT 失效
公开(公告)号：JPS63293986A
公开(公告)日：1988-11-30
申请号：JP12828387
申请日：1987-05-27
申请人： HITACHI LTD
发明人： TANBARA HIDEO , NAKAGOME HIDEAKI
IPC分类号： H01L43/06
摘要： PURPOSE:To lower offset voltage generated between output terminals for a Hall element by electrically connecting the positive pole of an input terminal for one Hall element and the positive pole of an input terminal for the other Hall element so that the positive pole of the input terminal for one Hall element is used as an input terminal in the direction tying a pair of input terminals on a semiconductor wafer and the positive pole of the input terminal for the other Hall element is employed as an input terminal formed on another end side. CONSTITUTION:Arbitrary two of a plurality of Hall elements H1, H2, H3... shaped so that AB axes tying pairs of input terminals 3a, 3b on a wafer 1 are made mutually parallel are paired, and the Hall elements are connected electrically so that the positive pole of one Hall element H1 is used as the input terminal 3a shaped on the end A of the axis AB and the positive pole of the other Hall element H2 is employed as the input terminal 3b formed on the end B of the axis AB. Accordingly, even when each output terminal 4a, 4b for the Hall elements H1, H2, H3... is formed to a geometrically asymmetric shape by reason of the shortage, etc., of the accuracy of mask alignment and photosensitive accuracy, the offset voltage VHO of one Hall element H1 and the offset voltage VHO of the other Hall element H2 are offset, thus acquiring the Hall elements having low offset voltage VHO.

3. 发明专利

JPS6245158A SCHOTTKY TYPE SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS6245158A
公开(公告)日：1987-02-27
申请号：JP18410685
申请日：1985-08-23
申请人： HITACHI LTD
发明人： NAKAGOME HIDEAKI , TANBARA HIDEO
IPC分类号： H01L29/872 , H01L21/60 , H01L23/48 , H01L29/47
摘要： PURPOSE:To avoid fluctuation of characteristics and deterioration in reliability by a method wherein a semi-insulating layer is formed at the position which is horizontally different from the position of a Schottky junction in a semiconduc tor substrate and an electrode is extended over the semi-insulating layer to form a bonding part. CONSTITUTION:A semiconductor substrate 1 for a Schottky diode is composed of an N type substrate 1a and an N-type epitaxial layer 1b formed on the substrate 1a. A CVD film 2 is formed on the layer 1b and, after a hole is drilled in the Schottky junction region, an electrode 3 is formed by evaporation. The electrode 3 is extended from the Schottky junction part 4 to a bonding part 5 of a wire 6 along the CVD film 2. On the other hand, a square semi-insulating layer 7 is formed in the epitaxial layer 1b. A plurality of electrodes 3 and semi-insulating layers 7 are formed on one pellet 8 and the wire 6 is bonded to any one of the bonding parts 5. A scribing grid region 9, on which the CVD film 2 is not formed, is provided on the substrate 1 along the circumference of the pellet 8.

4. 发明专利

JPS58213469A Contact electrode and manufacture thereof 失效
标题翻译：接触电极及其制造
公开(公告)号：JPS58213469A
公开(公告)日：1983-12-12
申请号：JP9615582
申请日：1982-06-07
申请人： Hitachi Ltd
发明人： YAMADA KOUHEI , NAKAGOME HIDEAKI , TERAKADO HAJIME
IPC分类号： H01L29/43 , H01L21/28 , H01L29/45
CPC分类号： H01L29/456 , H01L29/8611
摘要： PURPOSE:To prevent the abnormal reaction and the formation excessive silicide when the titled contact electrode is exposed to a high temperature by a method wherein the contact electrode is composed of an alloy consisting of Ti, Pd and Ag or Ti, Pt and Ag. CONSTITUTION:A P-N junction 9 has a diode construction by providing a P type conductive region on the center surface layer part located on the main surface of a semiconductor substrate 1. The circumference of said region 2 and the main surface of the substrate 1 are covered by an insulating film 3. A contact electrode 8 is formed on the region 2 (contact hole region) which will be exposed from the film 3. This electrode 8 is composed of a ternary-alloy consisting of Ti, Pd (or Pt) and Ag. As no abnormal reaction occurs on the electrode 8 located at the contact hole part, there is no increase of inverce leak current. Also, in view of the fact that the growth of silicide at the hole edge part is not large, a high integration can be accomplished and, on the contrary, the element can be made smaller in size.
摘要翻译：目的：为了防止标题接触电极暴露于高温时的异常反应和形成过量的硅化物，其中接触电极由由Ti，Pd和Ag或Ti，Pt和Ag组成的合金构成。构成：PN结9通过在位于半导体衬底1的主表面上的中心表面层部分上提供P型导电区域而具有二极管结构。所述区域2的周边和衬底1的主表面被覆盖通过绝缘膜3.在从膜3露出的区域2（接触孔区域）上形成接触电极8.该电极8由Ti，Pd（或Pt）和 Ag。由于在位于接触孔部的电极8上没有发生异常反应，因此不会产生反转泄漏电流的增加。此外，考虑到硅化物在孔边缘部分的生长不大，可以实现高的一体化，相反，可以使元件的尺寸更小。

5. 发明专利

JPH04315443A LEAD FRAME OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF ASSEMBLING SEMICONDUCTOR INTEGRATED CIRCUIT USING SAID LEAD FRAME 失效
公开(公告)号：JPH04315443A
公开(公告)日：1992-11-06
申请号：JP8210391
申请日：1991-04-15
申请人： HITACHI LTD
发明人： NAKAGAWA KIYOSHI , INOUE HAJIME , YAMADA SHINICHI , NAKAGOME HIDEAKI
IPC分类号： H01L21/50
摘要： PURPOSE:To improve productivity and enable a title device to be simplifid and low-priced by improving the working efficiency of die-bonding and wire- bonding to the lead frame. CONSTITUTION:A package 1 of a Schottky diode with two chips wire-bonded, which consists of first and second chips 2, 3 with circuits, a common lead 4 to which the first and second chips 2, 3 are die-bonded to the first chip 2, and a second lead 6 wire-bonded to the second chip 3. The die-bonded positions of the first second chips 2, 3 and the positions of the wire-bonding common, first and second leads 4-6 are established in symmetry with respect to the center line to a lead frame 9, and sprocket holes 10 and positioning notches 11 are established on both sides in accordance with those positions.

6. 发明专利

JPH03218654A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03218654A
公开(公告)日：1991-09-26
申请号：JP1261190
申请日：1990-01-24
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： TANBARA HIDEO , OTOGURO MASATAKA , NAKAGOME HIDEAKI
IPC分类号： H01L23/28
摘要： PURPOSE:To make a sealing body small in dielectric loss without deteriorating its sealing properties by a method wherein the sealing body is made to decrease gradually in size starting from its part where leads are provided toward its underside. CONSTITUTION:A sealing body 11 which seals up a semiconductor chip and leads 12 and 12 is so constituted that it is made to decrease gradually in size starting from its part where leads are provided toward its underside (side which faces a microstrip line 2). That is, the sealing body 11 is so structured as to be similar to a box-shaped body whose lower corners are removed along the direction in which the leads 12 are made to extend. The cross sectional shape of the sealing body 11 parallel to its underside is formed into the shape of a rectangular body whose four corners are cut off or an octagon. By this setup, a sealing body can be decreased in dielectric loss caused by the resin of the sealing body and used in a high frequency band.

7. 发明专利

JPH0320898B2 失效
公开(公告)号：JPH0320898B2
公开(公告)日：1991-03-20
申请号：JP9767082
申请日：1982-06-09
申请人： HITACHI LTD
发明人： NAKAGOME HIDEAKI , YAMADA KOHEI , TERAKADO HAJIME
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/768 , H01L23/52 , H01L29/43

8. 发明专利

JPS63263782A MAGNETOELECTRIC CONVERTER 失效
公开(公告)号：JPS63263782A
公开(公告)日：1988-10-31
申请号：JP9733487
申请日：1987-04-22
申请人： HITACHI LTD
发明人： TANBARA HIDEO , NAKAGOME HIDEAKI
IPC分类号： H01L43/02
摘要： PURPOSE:To improve the sensitivity of a magnetoelectric converting device by composing a lead frame of a soft magnetic metal to reduce the assembling cost of the device. CONSTITUTION:A magnetoelectric converting element is of a Hall element, a magnetoresistance element, a magneto diode or a magnetic reactance element. For example, the Hall element has lead frames 11-14 made of soft magnetic metal, such as Permalloy. Since the frames 11-14 are composed of soft magnetic metal, the frame 14 becomes a magnetic path thereby to effectively converge a magnetic flux 8 from a wide range to a GaAs chip 2. Thus, the sensitivity of detecting a magnetic field can be raised, and assembling steps can be simplified as compared with a conventional one.

9. 发明专利

JPS6379353A RESIN-SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6379353A
公开(公告)日：1988-04-09
申请号：JP22353686
申请日：1986-09-24
申请人： HITACHI LTD
发明人： NAKAGOME HIDEAKI , TERAKADO HAJIME , TANBARA HIDEO
IPC分类号： H01L23/29 , H01L23/31
摘要： PURPOSE:To decrease the relative dielectric constant of resin effectively and to make high frequency characteristics excellent, by mixing many minute hollow bodies in a part of the resin in a semiconductor device, wherein a pellet that is attached to an attaching substrate is sealed with the resin. CONSTITUTION:A package 4 comprises, e.g., an epoxy resin. Many minute glass hollow balls 5, having different diameters are mixed around a semiconductor pellet 1 and a piece of wire 3 approximately uniformly. As the hollow balls g the balls having the equal diameter can be used. It is effective, however to use the balls having the different large and small diameters in the mixed state in order to reduce the density of the resin. Thus the relative dielectric constant of the resin is effectively decreased, and the high frequency characteristics are improved.

10. 发明专利

JPS61214531A WEDGE AND WIRE BONDER USING WEDGE 失效
公开(公告)号：JPS61214531A
公开(公告)日：1986-09-24
申请号：JP5455285
申请日：1985-03-20
申请人： HITACHI LTD
发明人： TANBARA HIDEO , NAKAGOME HIDEAKI
IPC分类号： H01L21/607 , H01L21/60
摘要： PURPOSE:To prevent a protective film from being broken down in case of coming into contact with a pellet face by means of rounding the bonding side corner ends of a wedge. CONSTITUTION:The corners 4a-4d of a wedge 1 in the directions of width and thickness of bonding ends are rounded so that a protective film may not be broken down due to the contact between an end of wedge 1 and a pallet face even if the pellet is inclined in case of linear bonding operation. When a wedge conforming to such a constitution is linear-bonded by ultrasonic vibration, the bonding yield may be improved remarkably since any breakdown of protective film due to the contact between an end of wedge in the width direction and a pellet face may be entirely avoided.

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