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1. 发明专利

DE3021042A1 未知
公开(公告)号：DE3021042A1
公开(公告)日：1980-12-11
申请号：DE3021042
申请日：1980-06-03
申请人： HITACHI LTD
发明人： IMAIZUMI ICHIRO , OCHI SHIKAYUKI , KIMURA MASATOSHI , YOSHIMURA MASAYOSHI , YAMAGUCHI TAKASHI , KODA TOYOMASA
IPC分类号： H01L27/04 , H01L21/822 , H01L29/41 , H01L29/8605 , H01L29/86 , H01L27/02
摘要： A high-breakdown-voltage resistance element comprises a semiconductor body, an impurity layer disposed in a surface region of the semiconductor body to provide a resistor body, a first electrode connected to one end of the resistor body through a contact hole in a first insulating film formed on the surface of the semiconductor body, and a second electrode connected to the other end of the resistor body through another contact hole in the insulating film. A second insulating film is formed on the first and second electrodes, and a third electrode is connected to the first electrode through a contact hole in the second insulating film, so that the entire surface of the resistor body and adjacent areas are covered with the first, second and third electrodes.

2. 发明专利

DE3103785A1 未知
公开(公告)号：DE3103785A1
公开(公告)日：1981-12-03
申请号：DE3103785
申请日：1981-02-04
申请人： HITACHI LTD
发明人： IMAIZUMI ICHIRO , KIMURA MASATOSHI , OCHI SHIKAYUKI , YOSHIMURA MASAYOSHI , YAMAGUCHI TAKASHI , KODA TOYOMASA
IPC分类号： H01L21/331 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/73 , H01L29/8605 , H01L23/52 , H01L29/72
摘要： A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resistor body, and a plate layer which extends from a high potential electrode of the resistor body covers a main part of the P-type low doped region.

3. 发明专利

IT8119502D0 未知
公开(公告)号：IT8119502D0
公开(公告)日：1981-02-04
申请号：IT1950281
申请日：1981-02-04
申请人： HITACHI LTD
发明人： IMAIZUMI ICHIRO , KIMURA MASATOSHI , OCHI SHIKAYUKI , YOSHIMURA MASAYOSHI , YAMAGUCHI TAKASHI , KODA TOYOMASA
IPC分类号： H01L21/331 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/73 , H01L29/8605 , H01L
摘要： A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resistor body, and a plate layer which extends from a high potential electrode of the resistor body covers a main part of the P-type low doped region.

4. 发明专利

IT8067863D0 未知
公开(公告)号：IT8067863D0
公开(公告)日：1980-06-03
申请号：IT6786380
申请日：1980-06-03
申请人： HITACHI LTD
发明人： OCHI ICHIRO IMAIZUMI SHIKAYUKI , KIMURA MASATOSHI , YOSHIMURA MASAYOSHI , YAMAGUCHI TAKASHI , KODA TOYOMASA
IPC分类号： H01L27/04 , H01L21/822 , H01L29/41 , H01L29/8605 , H01C
摘要： A high-breakdown-voltage resistance element comprises a semiconductor body, an impurity layer disposed in a surface region of the semiconductor body to provide a resistor body, a first electrode connected to one end of the resistor body through a contact hole in a first insulating film formed on the surface of the semiconductor body, and a second electrode connected to the other end of the resistor body through another contact hole in the insulating film. A second insulating film is formed on the first and second electrodes, and a third electrode is connected to the first electrode through a contact hole in the second insulating film, so that the entire surface of the resistor body and adjacent areas are covered with the first, second and third electrodes.

5. 发明专利

JPH02123820A SEMICONDUCTOR CIRCUIT 失效
公开(公告)号：JPH02123820A
公开(公告)日：1990-05-11
申请号：JP27624888
申请日：1988-11-02
申请人： HITACHI LTD
发明人： SAKAMOTO MITSUZO , OKABE TAKEAKI , SATONAKA KOICHIRO , KODA TOYOMASA
IPC分类号： H03K17/06 , H03K17/687
摘要： PURPOSE:To prevent a through-current from a high power voltage terminal to an output terminal by providing a means driving a load while a gate voltage of an N-channel MOS transistor(TR) or a base voltage of an NPN TR is decreased more than a ground voltage. CONSTITUTION:A voltage drop circuit decreasing the gate voltage of a TR M1 more than the ground voltage is included in a gate decreasing circuit. Thus, the TR M1 is kept off when the load is driven so that the gate voltage of the TR M1 is lower than the minimum voltage of the output voltage VOUT in advance. Even if the output voltage VOUT is lower than the ground voltage VGND due to an inductive component included in a load, the through-current from the power supply to the output terminal is reduced.

6. 发明专利

JPH0258350A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0258350A
公开(公告)日：1990-02-27
申请号：JP20843588
申请日：1988-08-24
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KODA TOYOMASA , TAGUCHI KAZUYO
IPC分类号： H01L21/761 , H01L21/76 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06
摘要： PURPOSE:To eliminate the erroneous operation of a circuit or breakdown of an IC by electrically isolating an isolation layer around an island to be possibly at a lower potential than that of the isolation layer from an isolation layer of other elements. CONSTITUTION:An n type buried layer 4 in which antimony is employed as an impurity source is formed including a small signal element part on a p-type epitaxial layer 3. An n type diffused layer 2 is extended into the layer 3 by thermal diffusion of this case, and its top is connected to the layer 4. That is, a p-type epitaxial layer 3a of a section to become a power transistor is isolated from a p-type epitaxial layer 3b of a section to become a small signal circuit. An n-type epitaxial layer 5 is formed, and an element isolation diffused layer and a collector punching n type diffused layer 7 are selectively formed therein. That is, an n-type layer is presented between the power transistor and a lateral p-n-p transistor, its island becomes a power source potential VCC, and even if the island of the power transistor becomes negative potential, it is not affected to the lateral p-n-p, and no erroneous operation of the circuit occurs.

7. 发明专利

JPH01243720A SEMICONDUCTOR CIRCUIT AND ITS DRIVING METHOD 失效
公开(公告)号：JPH01243720A
公开(公告)日：1989-09-28
申请号：JP6938488
申请日：1988-03-25
申请人： HITACHI LTD
发明人： SAKAMOTO MITSUZO , OKABE TAKEAKI , SATONAKA KOICHIRO , KODA TOYOMASA
IPC分类号： H03K17/06
摘要： PURPOSE:To boost the gate of a MOS transistor(TR) without using a charge pump circuit requiring a capacitor, etc., by charging the gate of the source- follower-connected MOS TR at an (n) channel through a diode. CONSTITUTION:When an MOS TRM3 at the (n) channel is in an OFF condition, an MOS TRM2 at a P channel is made into an ON condition. The drain current of the MOS TRM2 flows through a diode Dn, and charges the section between the gate sources of an MOS TRM1 at the (n) channel for an output. For this, the MOS TRM1 is turned on, and an output voltage starts to rise. The discharge of the charges between the gate sources of the MOS TRM1 is restrained by the diode D0.

8. 发明专利

JPS5852347B2 JPS5852347B2 - 失效
公开(公告)号：JPS5852347B2
公开(公告)日：1983-11-22
申请号：JP1150680
申请日：1980-02-04
申请人： Hitachi Ltd
发明人： IMAIZUMI ICHIRO , KIMURA MASATOSHI , OCHI SHIKAYUKI , YOSHIMURA MASAYOSHI , YAMAGUCHI TAKASHI , KODA TOYOMASA
IPC分类号： H01L21/331 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/73 , H01L29/8605
CPC分类号： H01L29/402 , H01L27/04 , H01L29/0821 , H01L29/8605 , H02B13/02 , Y10S257/913

9. 发明专利

JP2518855B2 失效
公开(公告)号：JP2518855B2
公开(公告)日：1996-07-31
申请号：JP16232087
申请日：1987-07-01
申请人： HITACHI LTD
发明人： KIMURA MASATOSHI , SATONAKA KOICHIRO , KODA TOYOMASA , OKABE TAKEAKI , SAKAMOTO MITSUZO
IPC分类号： H01L29/78 , H01L21/76 , H01L21/8249 , H01L27/06 , H01L27/088

10. 发明专利

JPH0287576A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0287576A
公开(公告)日：1990-03-28
申请号：JP23876888
申请日：1988-09-26
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： TAGUCHI KAZUYO , KODA TOYOMASA
IPC分类号： H01L29/41 , H01L29/78
摘要： PURPOSE:To minimize the resistance of source A wiring so as to improve the performance of a power MOSFET by setting the position of a source fetching pad for output at the center of the power MOSFET. CONSTITUTION:The source fetching pad 1 for a MOSFET is provided at the central section of a vertical power MOS element 2 formed on a chip main body 11 composed of an N-type substrate and resistances R of source A wiring are connected to the pad 1. When the pad is provided at the central part of the element, resistance values of resistances of the source A wiring 14 around the pad are averaged and reduced, since no far-separated source electrode exists in contrast to the conventional source fetching pad provided on one side of a chip.

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