会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明专利
    • DIAGRAM DISPLAY DEVICE
    • JPH0844337A
    • 1996-02-16
    • JP17782594
    • 1994-07-29
    • HITACHI LTD
    • HASEGAWA SUSUMUSHISHIDO TETSUO
    • G09G5/34B61L27/00G09D1/00
    • PURPOSE:To improve operability by adding a function scrolling in the direction of a diagram to normal scrolling functions in the horizontal and vertical direction. CONSTITUTION:A tilt and a direction of a diagram coordinates of a boundary point and the like are computed by a scroll control information computing processing section 31 in accordance with indication obtained through a scroll control information input processing section 30, and its result is stored in a scroll control information table 40 of a memory 20. A scroll control processing section 32 judges whether it is normal scroll, diagonal scroll with a fixed angle, or tracking scroll of a specified diagram direction based on information of the scroll control information table 40 and a direction of a scroll key, makes and edits scroll control indication data, and scroll in the diagram direction can be performed by giving the data to a display position/display rectangular computing section 14.
    • 6. 发明专利
    • Command transmission system for railway facilities
    • 铁路设施指挥传输系统
    • JP2006193071A
    • 2006-07-27
    • JP2005007859
    • 2005-01-14
    • Hitachi Ltd株式会社日立製作所
    • SHINTANI FUMIHIKOHATANAKA HIDEYUKIHASEGAWA SUSUMUYOSHIDA KOKI
    • B61L27/00
    • PROBLEM TO BE SOLVED: To provide a command transmission system for railway facilities capable of easily accommodating addition of a command terminal and functional modification.
      SOLUTION: A plurality of command terminals A, B, C used by railway workers are respectively installed with a main tool function by POP, a transmission server CS for controlling the terminals is installed with a mail server function, and the transmission server is installed with a terminal control function by user account control to perform information transmission between the command terminals A, B, C and the transmission server CS by a POP function, thus increasing and decreasing the number of the command terminals A, B, C without the need for changing the transmission server CS.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供能够容易地容纳命令终端的附加和功能修改的铁路设施的命令传输系统。 解决方案:铁路工人使用的多个命令终端A,B,C分别由POP安装主工具功能,用于控制终端的传输服务器CS安装有邮件服务器功能,传输服务器 通过用户账号控制安装了终端控制功能,通过POP功能执行命令终端A,B,C与传输服务器CS之间的信息传输,从而增加和减少命令终端A,B,C的数量,而没有 需要更改传输服务器CS。 版权所有(C)2006,JPO&NCIPI
    • 9. 发明专利
    • Manufacture of semiconductor device
    • 半导体器件的制造
    • JPS59161019A
    • 1984-09-11
    • JP2704884
    • 1984-02-17
    • Hitachi Ltd
    • SHIMADA JIYUICHIHASEGAWA SUSUMUSAITOU KAZUTOSHIKOMATSUBARA KIICHI
    • H01L21/22H01L21/265H01L21/324H01L33/30
    • H01L21/3245H01L21/265
    • PURPOSE:To omit the vacuum sealing process when a semiconductor device is to be manufactured by a method wherein a first protective film is provided on the crystal substrate of a III-V group compound semiconductor, and after the substrate is irradiated by impruity atoms according to the ion implantation method, the first protective film is removed, a second protective film is provided on the substrate moreover, and after then, heat treatment is performed according to the open tube method to introduce impurity atoms in the substrate. CONSTITUTION:Phosphorus silicate glass (PSG) 2 is adhered according to CVD method on a substrate 1 having an N type epitaxial growth layer, and the PSG only on the parts necessary to be diffused with Zn is removed according to the photo resist method. Then Zn ions 5 are projected. The signatures 3, 4 in the figure show the parts introduced with Zn ions. Then the PSG3 is removed, and PSG6 is adhered on the whole surface again. After then, when heat treatment is performed at 900 deg.C for 14hr in nitrogen gas current, Zn is diffused, and the Zn ions introduced parts of the substrate are converted into the P type up to about 9mum depth as shown in the signature 7. After then, electrodes are adhered according to the usual method, and when it is cut aparat to be assembled, light emitting diodes can be obtained. A quartz ampule is unnecessary, and vacuum sealing process can be omitted.
    • 目的:为了通过在III-V族化合物半导体的晶体基板上设置第一保护膜的方法制造半导体器件,并且在基板被根据 离子注入方法中,除去第一保护膜,另外在基板上设置第二保护膜,然后根据开管法进行热处理,以在基板中引入杂质原子。 构成:根据CVD法将磷酸硅玻璃(PSG)2粘附在具有N型外延生长层的基板1上,并且根据光刻胶方法除去需要与Zn扩散的部分上的PSG。 然后投射Zn离子5。 图中的签名3,4显示了引入Zn离子的部分。 然后取出PSG3,再次将PSG6粘在整个表面上。 然后,当在氮气流中在900℃下进行14小时的热处理时,Zn扩散,并且引入部分基板的Zn离子被转换成高达约9μm深度的P型,如签名7所示 然后,按照通常的方法粘接电极,当被切割成待组装时,可以获得发光二极管。 不需要石英安瓿,可以省略真空密封的过程。