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1. 发明申请

WO2022184353A1 GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING THICKNESS 审中-公开
公开(公告)号：WO2022184353A1
公开(公告)日：2022-09-09
申请号：PCT/EP2022/052225
申请日：2022-01-31
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VEMULAPATI, Umamaheswara , LOPHITIS, Neophytos , VOBECKY, Jan , UDREA, Florin , STIASNY, Thomas , CORVASCE, Chiara , ANTONIOU, Marina
IPC分类号： H01L29/74 , H01L29/10 , H01L29/06 , H01L29/08 , H01L29/747
摘要： A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first conductivity type, an anode layer (5) of the second conductivity type, an anode electrode (3) and a gate electrode (4). The base layer (8) comprises a cathode base region (81) located between the cathode region (9) and the drift layer (7) and having a first depth (DI), a gate base region (82) located between the gate electrode (4) and the drift layer (7) and having a second depth (D2), and an intermediate base region (83) located between the cathode base region (81) and the gate base region (82) and having two different values of a third depth (D3) being between the first depth (DI) and the second depth (D2).

2. 发明申请

WO2022112322A1 BIDIRECTIONAL THYRISTOR DEVICE WITH ASYMMETRIC CHARACTERISTICS 审中-公开
公开(公告)号：WO2022112322A1
公开(公告)日：2022-06-02
申请号：PCT/EP2021/082811
申请日：2021-11-24
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VOBECKY, Jan
IPC分类号： H01L29/06 , H01L29/08 , H01L29/423 , H01L29/747 , H01L29/74
摘要： A bidirectional thyristor device comprising a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22) opposite the first main surface (21), a first main electrode (31) arranged on the first main surface (21), and a second main electrode (32) arranged on the second main surface (22), is specified, wherein the semiconductor body (2) comprises a first base layer (51) of a first conductivity type, a second base layer (52) of the first conductivity type, and a third base layer (53) of a second conductivity type different than the first conductivity type arranged between the first base layer (51) and the second base layer (52). The first main electrode (31) acts as a cathode for a first thyristor functional element (11) and as an anode for a second thyristor functional element (12) of the bidirectional thyristor device (1). The bidirectional thyristor further comprises first and second emitter regions (61, 62) of the second conductivity type with emitter short regions (71,72) of the first conductivity type therein. The bidirectional thyristor device (1) is configured asymmetrically with respect to the first thyristor functional element (11) and the second thyristor functional element (12), through different arrangements of the first (71) and second (72) emitter short regions at the first and second main side.

3. 发明申请

WO2022048919A1 POWER SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2022048919A1
公开(公告)日：2022-03-10
申请号：PCT/EP2021/073039
申请日：2021-08-19
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VOBECKY, Jan , VEMULAPATI, Umamaheswara
IPC分类号： H01L29/06 , H01L29/423 , H01L29/74 , H01L21/332 , H01L29/08 , H01L23/482
摘要： Disclosed is a power semiconductor device comprising a semiconductor wafer having a first main side and a second main side opposite to the first main side. The semiconductor wafer comprises a plurality of parallel thyristor cells, wherein each thyristor cell comprises in an order from the first main side to the second main side (a) a cathode electrode and a gate electrode arranged on the first main side; (b) a cathode layer comprising a cathode region of a first conductivity type, forming an ohmic contact with the cathode electrode; (c) a first base layer of a second conductivity type different from the first conductivity type, wherein the cathode region is formed as a well in the first base layer and forms a first p-n junction between the first base layer and the cathode region; (d) a second base layer of the first conductivity type forming a second p-n junction with the first base layer; (e) an anode layer of the second conductivity type separated from the first base layer by the second base layer; wherein the gate electrode forms an ohmic contact with the first base layer; and an anode electrode is arranged on the second main side and forms an ohmic contact with the anode layer. The gate electrodes of the plurality of thyristor cells form a gate design comprising multiple polygons each comprising at least four struts. Disclosed is furthermore a method of manufacturing a Power semiconductor device.

4. 发明申请

WO2022112169A1 BIDIRECTIONAL THYRISTOR DEVICE 审中-公开
公开(公告)号：WO2022112169A1
公开(公告)日：2022-06-02
申请号：PCT/EP2021/082491
申请日：2021-11-22
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VOBECKY, Jan , VEMULAPATI, Umamaheswara
IPC分类号： H01L29/06 , H01L29/08 , H01L29/423 , H01L29/747 , H01L29/74
摘要： A bidirectional thyristor device (1) comprising a semiconductor body (2) extending between a first main surface (21) and a second main surface (22), is provided wherein a first main electrode (31) and a first gate electrode (41) are arranged on the first main surface and a second main electrode (32) and a second gate electrode (42) are arranged on the second main surface. The first main electrode comprises a plurality of first segments (310) that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments (320) that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface. The bidirectional thyristor device (1) further comprises first, second and third base regions (51, 52, 53), as well as emitter regions (61, 62) on either side of the base regions. The emitter regions (61, 62) comprise emitter short regions (71, 72) of a conductivity type opposite to that of the emitter regions. As a consequence, depending on the direction in which the device is used, the first and second segments of the main electrodes may function as cathode or as anode electrode. The gate may have a honeycomb (hexagonal) pattern.

5. 发明申请

WO2022112127A1 MODULE COMPRISING A SWITCHABLE BYPASS DEVICE 审中-公开
公开(公告)号：WO2022112127A1
公开(公告)日：2022-06-02
申请号：PCT/EP2021/082298
申请日：2021-11-19
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VOBECKY, Jan , HAFNER, Ying-Jiang
IPC分类号： H02M1/32 , H02M7/483 , H01L29/74 , H01L29/747 , H01L29/06 , H01L29/08 , H01L29/423
摘要： A module (100) is specified, the module (100) comprising a first module connection (108), a second module connection (109), an energy store (105), a first electrical switch (101) and a second electrical switch (102), wherein a switchable bypass device (1) is arranged between the first module connection (108) and the second module connection (109) and wherein the switchable bypass device (1) is configured to remain in a bidirectional current conducting state in response to a single trigger pulse.

6. 发明申请

WO2022096120A1 POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD 审中-公开
公开(公告)号：WO2022096120A1
公开(公告)日：2022-05-12
申请号：PCT/EP2020/081287
申请日：2020-11-06
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： BELLINI, Marco , VOBECKY, Jan , KNOLL, Lars , ROMANO, Gianpaolo , ALFIERI, Giovanni
IPC分类号： H01L29/10 , H01L29/16 , H01L29/66 , H01L29/78 , H01L21/04
摘要： In at least one embodiment, the power semiconductor device (1) comprises: - a source region (21), - a channel region (22) in the semiconductor body (2, and - a gate electrode (3) at the channel region (22) which is electrically insulated from the semiconductor body (2), wherein - the channel region (22) is of a second conductivity type different from the first conductivity type, - the channel region (22) comprises a first dopant having an activation energy of at most 0.15 eV, and - the channel region (22) comprises a second dopant having an activation energy of at least 0.3 eV.

7. 发明公开

EP4208899A1 POWER SEMICONDUCTOR DEVICE 有权转让
公开(公告)号：EP4208899A1
公开(公告)日：2023-07-12
申请号：EP21763343.7
申请日：2021-08-19
申请人： Hitachi Energy Switzerland AG
发明人： VOBECKY, Jan , VEMULAPATI, Umamaheswara
IPC分类号： H01L29/06 , H01L29/423 , H01L29/74 , H01L21/332 , H01L29/08 , H01L23/482

8. 发明公开

EP4053915A1 GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING THICKNESS 有权转让
公开(公告)号：EP4053915A1
公开(公告)日：2022-09-07
申请号：EP21160204.0
申请日：2021-03-02
申请人： Hitachi Energy Switzerland AG
发明人： VEMULAPATI, Umamaheswara , LOPHITIS, Neophytos , VOBECKY, Jan , UDREA, Florin , STIASNY, Thomas , CORVASCE, Chiara , ANTONIOU, Marina
IPC分类号： H01L29/74 , H01L29/10 , H01L29/06 , H01L29/08 , H01L29/747
摘要： A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first conductivity type, an anode layer (5) of the second conductivity type, an anode electrode (3) and a gate electrode (4). The base layer (8) comprises a cathode base region (81) located between the cathode region (9) and the drift layer (7) and having a first depth (D1), a gate base region (82) located between the gate electrode (4) and the drift layer (7) and having a second depth (D2), and an intermediate base region (83) located between the cathode base region (81) and the gate base region (82) and having two different values of a third depth (D3) being between the first depth (D1) and the second depth (D2).

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