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1. 发明专利

JP2011198992A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2011198992A
公开(公告)日：2011-10-06
申请号：JP2010063957
申请日：2010-03-19
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： FUJIMOTO TETSUJI , AKIMOTO KATSUYA , IIZUKA KAZUYUKI , WATANABE MASAHIRO
IPC分类号： H01L33/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element such that a tool for handling the semiconductor light emitting element is less damaged and the semiconductor light emitting element itself is prevented from cracking or chipping.SOLUTION: The semiconductor light emitting element includes a semiconductor substrate 201, a semiconductor laminate portion 10 disposed on the semiconductor substrate 201 and including a light emitting portion having a first clad layer 104 of a first conductivity type, an active layer 105, and a second clad layer 106 of a second conductivity type different from that of the first clad layer 104, and a first electrode 120 and a second electrode 122 electrically connected to the semiconductor laminate portion 10. The semiconductor laminate portion 10 includes one surface side opposite to the substrate 201 as a light extraction surface, has an inverse mesa etching shape at least at a part of a wet etching side face of the semiconductor laminate portion 10, and has a transparent insulating film 130 covering, in the shape of a curved surface, a corner portion 20 formed by the light extraction surface and wet etching side face.
摘要翻译：要解决的问题：提供一种半导体发光元件，使得用于处理半导体发光元件的工具被损坏较少，并且防止半导体发光元件本身破裂或碎裂。解决方案：半导体发光元件包括半导体衬底201，设置在半导体衬底201上并包括具有第一导电类型的第一覆盖层104的发光部分，有源层105和不同于第二导电类型的第二导电类型的第二覆盖层106的半导体层叠部分10 第一覆盖层104，以及与半导体层叠部10电连接的第一电极120和第二电极122.半导体层叠部10包括与基板201相对的作为光提取面的一个表面侧，具有反转至少在半导体层叠体的湿蚀刻侧面的一部分处形成台面蚀刻形状并且具有以弯曲表面形式覆盖由光提取表面和湿蚀刻侧面形成的角部20的透明绝缘膜130。

2. 发明专利

JPH09129056A EXTRUSION MACHINE CROSSHEAD 失效
公开(公告)号：JPH09129056A
公开(公告)日：1997-05-16
申请号：JP28338095
申请日：1995-10-31
申请人： HITACHI CABLE
发明人： OKUIE HIROSHI , NAKAHIGASHI FUMIKATA , HORII KOJI , WATANABE MASAHIRO
IPC分类号： B29C48/34 , H01B13/14 , B29C47/28
摘要： PROBLEM TO BE SOLVED: To eliminate substantially necessity for aligning work and make it possible to improve life of respective machine parts. SOLUTION: A core metal 81 and a mouthpiece 82 are coupled by a bolt on a land part on the extrusion side and integrated in a crosshead as a one body type core metal mouthpiece and an adjust bolt is no longer necessary at all. And more precise centrality is obtained by conducting the integration by the coupling bolt 9 on the land part. Furthermore, prevention of deflections can be made surer by taper-fitting the core metal 81 into a holder of the core metal.

3. 发明专利

JPH0877843A HIGH FREQUENCY INSULATED CABLE 失效
公开(公告)号：JPH0877843A
公开(公告)日：1996-03-22
申请号：JP21274394
申请日：1994-09-06
申请人： HITACHI CABLE
发明人： WATANABE MASAHIRO , MIYATAKI MASAHITO , SUZUKI KAZUYUKI
IPC分类号： H01B11/00 , H01B11/18
摘要： PURPOSE: To provide a high frequency insulated cable which suppresses the damage of an insulator during bending of a cable and materializes stable insertion loss property even in high frequency by using a specified polymer for the insulator, concerning a high frequency insulated cable which has an insulator, an outer conductor, and a sheath provided in order around the center conductor. CONSTITUTION: In a high frequency insulated cable, which has an insulator 2, a soft copper foil 3 plated with, tor example, silver, an outer conductor being a tin-plated braid 4, and a sheath 5, an unsintered PTFE homopolymer is used for the insulator 2. Accordingly, the mechanical strength of the insulator 3 improves rapidly and since it is unsintered condition, the surface has proper roughness and hardness, and it can maintain contact state by the outer conductors 3 and 4-fitten the surface of the insulator 2, and stable insertion loss property can be obtained.

4. 发明专利

JPH0864042A MANUFACTURE OF FLAT CABLE AND EXTRUSION HEAD THEREFOR 失效
公开(公告)号：JPH0864042A
公开(公告)日：1996-03-08
申请号：JP20229794
申请日：1994-08-26
申请人： HITACHI CABLE
发明人： SUZUKI KAZUYUKI , WATANABE MASAHIRO , HIRUTA YOSHIKATSU
IPC分类号： H01B7/08 , H01B13/00
摘要： PURPOSE: To enhance dimensional accuracy in the width direction of the flat cable to a great extent, and increase production speed for the flat cable by letting each flow path of an extrusion head for insulator material be so specifically constituted as to make a detour. CONSTITUTION: In the manufacture of the flat cable where insulator material is extruded in a flat shape for sheathing a plurality of conductors 8 disposed in parallel, following means are employed: let insulating material 2 make a detour into two flow paths 4 and 5 within an extrusion head 1, and the insulator material is once formed into each film shape 11 and 12 within detouring flows 6 and 7 while being made half as thin as that of the flat cable. Following which, the sections 11 and 12 of the insulator material formed into a film shape are integrated while being mutually pressed at the extruding port 3 through which each conductor 8 passes so as to be formed into a flat shaped insulator 13, and it is then extruded as the flat cable 14.

5. 发明专利

JPH0536318A MANUFACTURE OF INSULATION CABLE 失效
公开(公告)号：JPH0536318A
公开(公告)日：1993-02-12
申请号：JP19012891
申请日：1991-07-30
申请人： HITACHI CABLE
发明人： WATANABE MASAHIRO
IPC分类号： B29C47/02 , B29C47/92 , H01B13/14
摘要： PURPOSE:To increase the concentricity of an insulation cable largely by providing an electromagnetic coil close to an exit of an extruder, and supplying a current to a cable to be the conductor of the insulation cable for forming magnetic fields opposite to each other. CONSTITUTION:A pressure is given to an insulation body preliminarily moulded on a conductor (core wire) supplied from a supplier 1 for extruding and coating, and solvent used in preliminary moulding is dried 7. The insulation body is then sintered 8, and taken as a completed product 10. A supply side of the conductor (core wire) is then connected with a DC power supply 3 on the low potential side, and a DC current is supplied 2 to the supply side. The DC current is supplied 2 to an electromagnetic coil in a master die 4 similarly. A nipple 5 in the die 4 is self-held close to the center constantly by a remote force by the opposite magnetic fields by the magnetic field formed by the conductor (core wire) close to the nipple 5 and the electromagnetic coil in the die 4. Displacement of the nipple off the center of an extrusion line can thus be restricted forcedly, and the concentricity of the insulation cable can be improved largely.

6. 发明专利

JPH0461716A MANUFACTURE OF FLAT CABLE WITH SHIELD 失效
公开(公告)号：JPH0461716A
公开(公告)日：1992-02-27
申请号：JP17124090
申请日：1990-06-28
申请人： HITACHI CABLE
发明人： WATANABE MASAHIRO
IPC分类号： H01B7/08 , G05D23/20 , H01B13/22 , H01B13/24
摘要： PURPOSE:To reduce thermal strains in a vinyl sheath layer and decrease the gap between this sheath layer and an Al shield tape layer to a great extent by furnishing an infrared radiating surface temp. measuring device, a signal comparing/selecting device, and a control signal generating device. CONSTITUTION:An infrared radiating surface temp. measuring device 7 measures the surface temp. of a flat cable 2. The measuring values are compared with the preset values of the flat cable 2 surface temp., and selection is made to make adjustment by a control signal generator 12 for the amount of cold air supplied from a cold air generator 13 to the flat cable 2 after extrusive covering of vinyl sheath and the die outlet via a cold air cooling device 6 and a die outlet cold air cooling device 5. Thereby the amount of cold air is adjusted in accordance with the surface temp. of the vinyl sheath after extrusive covering, which eliminates rapid cooling immediately after extrusive covering of vinyl sheath layer, stabilizes the electrostatic capacity between Al shield tape layer and conductors, and allows reduction of thermal strains in the vinyl sheath layer and also the gap between this layer and the Al shield tape layer.

7. 发明专利

JPH03149713A MANUFACTURE OF INSULATED WIRE 失效
公开(公告)号：JPH03149713A
公开(公告)日：1991-06-26
申请号：JP28705889
申请日：1989-11-02
申请人： HITACHI CABLE
发明人： WATANABE MASAHIRO , MAEDA MASAMI
IPC分类号： H01B13/14
摘要： PURPOSE:To lessen outside dimension tolerance of an insulated wire which is dried and sintered by arranging an outside air shielding device, at a preset temperature, by which an insulator has no contact with outside air between an extruder and drying furnace, so that a PTFE insulator has no contact with outside air. CONSTITUTION:An outside air shielding device 6, at a preset temperature, by which an insulator 4 has no contact with outside air is arranged between an extruder 2 and a drying furnace 8, and a difference between a measured value, as the outside dimension of an insulated wire detected by an outside dimension measuring unit 7 installed in the outside air shielding device 6, and a set value is outputted as a comparison signal. This comparison signal is inputted into a drive means 5 for the extruder 2, a temperature control means 17 for the outside air shielding device 6 and a drive means 12 for an accepter 11 to control the respective drive means and control means. A PTFE insulator 4 therefore has no contact with outside air. As a result, the surface condition of the insulator 4 before inserted into the drying furnace 8 is uniform both in a radial direction and in a longitudinal direction to allow less outside dimension tolerance of the insulated wire which is dried and sintered.

8. 发明专利

JP2013058707A Semiconductor light-emitting element manufacturing method 审中-公开
标题翻译：半导体发光元件制造方法
公开(公告)号：JP2013058707A
公开(公告)日：2013-03-28
申请号：JP2011197615
申请日：2011-09-09
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： WATANABE MASAHIRO
IPC分类号： H01L21/301 , H01L33/02 , H01L33/38 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To reduce backside chipping at the time of element manufacturing.SOLUTION: In a semiconductor light-emitting element manufacturing method of cutting a semiconductor light-emitting element wafer into elements, the semiconductor light-emitting element wafer comprises a semiconductor lamination part, a first electrode provided on a first principal side of the semiconductor lamination part, a metal layer provided on a second principal surface side of the semiconductor lamination part, a support substrate provided on the metal layer on the side opposite to the semiconductor lamination part and a second electrode provided on the support substrate on the side opposite to the metal layer. Cutting of the semiconductor light-emitting element wafer comprises: a first cutting process of cutting the semiconductor light-emitting element wafer to a halfway depth of the support substrate along a plurality of cutting lines in a first direction and a second direction orthogonal to the first direction to form lattice-shaped half-cut grooves on the semiconductor light-emitting element wafer; and a second cutting process of further cutting the half-cut grooves by completely cutting the support substrate so as to make a depth of the grooves reach a dicing sheet attached to the semiconductor light-emitting element wafer.
摘要翻译：要解决的问题：减少元件制造时的背面切屑。解决方案：在将半导体发光元件晶片切割成元件的半导体发光元件制造方法中，半导体发光元件晶片包括半导体层叠部，设置在半导体发光元件的第一主面上的第一电极半导体层叠部，设置在半导体层叠部的第二主面侧的金属层，设置在与半导体层叠部相反的一侧的金属层上的支撑基板和设置在支撑基板的相反侧的第二电极到金属层。半导体发光元件晶片的切割包括：第一切割工艺，该半导体发光元件晶片沿着第一方向和第二方向的第一方向和第二方向沿着多个切割线将半导体发光元件晶片切割成支撑基板的中间深度方向在半导体发光元件晶片上形成格子状的半切槽; 以及通过完全切割支撑基板进一步切割半切槽的第二切割工艺，以使凹槽的深度达到附接到半导体发光元件晶片的切割片。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012141505A Photonic crystal, photonic crystal wafer, and method for producing photonic crystal 审中-公开
标题翻译：光子晶体，光子晶体波及其生产光电晶体的方法
公开(公告)号：JP2012141505A
公开(公告)日：2012-07-26
申请号：JP2011000728
申请日：2011-01-05
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： AKIMOTO KATSUYA , WATANABE MASAHIRO , IIZUKA KAZUYUKI
IPC分类号： G02B1/02 , C01B33/12
摘要： PROBLEM TO BE SOLVED: To provide a photonic crystal having superior intensity and heat resistance and becoming a large area or large volume, and to provide a photonic crystal wafer and a method for producing the photonic crystal.SOLUTION: The method for producing photonic crystals according to one embodiment includes steps for: sealing silicon dioxide balls 3, gallium 1, and arsenic 2 in a sealed container 5; after heating the sealed container 5 and melting the gallium 1 and the arsenic 2 to form gallium arsenide melt 13, solidifying the gallium arsenide melt 13 from the bottom of the sealed container 5 towards the vertically upward direction to generate gallium arsenide solid 14 and acquiring a mixture body 15 comprising the silicon dioxide balls 3 and the gallium arsenide solid 14; and partially heating the sealed container 5 in which the mixture body 15 is acquired, to form a molten zone 19 on the upper part of the mixture body 15, moving the molten zone 19 toward the vertically downward direction to generate a mixture body 150, with the silicon dioxide balls 3 aligned in the gallium arsenide solid 14.
摘要翻译：要解决的问题：提供具有优异的强度和耐热性并且变得面积大或体积大的光子晶体，并且提供光子晶体晶片和制造光子晶体的方法。解决方案：根据一个实施例的用于制造光子晶体的方法包括以下步骤：将二氧化硅球3，镓1和砷2密封在密封容器5中; 在加热密封容器5并熔化镓1和砷2以形成砷化镓熔体13之后，从密封容器5的底部朝着垂直向上方向固化砷化镓熔体13，以产生砷化镓固体14并获得包括二氧化硅球3和砷化镓固体14的混合体15; 并对其中获得混合体15的密封容器5进行部分加热，以在混合体15的上部形成熔融区19，使熔融区19向垂直方向移动，从而产生混合体150，二氧化硅球3在砷化镓固体14中排列。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012129357A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2012129357A
公开(公告)日：2012-07-05
申请号：JP2010279382
申请日：2010-12-15
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： IIZUKA KAZUYUKI , WATANABE MASAHIRO , FUJIMOTO TETSUJI
IPC分类号： H01L33/30 , H01L33/22 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminance and a low forward voltage.SOLUTION: In a semiconductor light-emitting element, a first main surface 11a is used as a light extraction surface in a compound semiconductor 14 having a light-emitting layer 13 sandwiched between a first conductivity type layer 11 and a second conductivity type layer 12. A supporting substrate 16 and the compound semiconductor 14 are coupled via a reflective metal film 15 reflecting light from the light-emitting layer 13 to the first main surface 11a side on a second conductivity type layer 12a. A transparent insulation film 17 is provided between the second main surface 12a of the compound semiconductor 14 and the reflective metal film 15. An interface electrode 18 penetrating through a part of the transparent insulation film 17 and having ohmic junction to the compound semiconductor layer electrically is provided. In the semiconductor light-emitting element, the light-emission wavelength is more than 780 nm in infrared light. In the first conductivity type layer 11, the total film thickness of a part where the group V is an As-system layer is 1.0 μm or more. A bandgap difference at each heterojunction interface of the first conductivity type layer 11, the light-emitting layer 13, the second conductivity type layer 12, and an undoped layer in each layer, is 0.30 eV or less.
摘要翻译：要解决的问题：提供具有高亮度和低正向电压的半导体发光元件。解决方案：在半导体发光元件中，第一主表面11a用作具有夹在第一导电类型层11和第二导电类型之间的发光层13的化合物半导体14中的光提取表面支撑衬底16和化合物半导体14经由反射金属膜15耦合，反射金属膜15将来自发光层13的光反射到第二导电类型层12a上的第一主表面11a侧。透明绝缘膜17设置在化合物半导体14的第二主表面12a和反射金属膜15之间。透明透明绝缘膜17的一部分并且电化学化合物半导体层具有欧姆结的界面电极18是提供。在半导体发光元件中，红外光的发光波长大于780nm。在第一导电类型层11中，组V为As系统层的部分的总膜厚度为1.0μm以上。第一导电类型层11，发光层13，第二导电类型层12和各层中的未掺杂层的每个异质结界面处的带隙差为0.30eV以下。版权所有（C）2012，JPO＆INPIT

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