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    • 1. 发明公开
    • Method and apparatus for forming an anti-reflection film for a cathode-ray tube
    • 用于制造阴极射线管的防反射涂层的方法和装置。
    • EP0533030A2
    • 1993-03-24
    • EP92115338.3
    • 1992-09-08
    • HITACHI, LTD.
    • Oishi, TomojiMaekawa, SachikoKato, AkiraNishizawa, MasahiroTomita, YoshifumiOkude, KojiroTochigi, KenjiMisawa, Yutaka
    • H01J29/89G02B1/10
    • G02B1/11H01J29/896H01J2209/012
    • An anti-reflection film (2) is produced on the panel surface of a cathode-ray tube (1) by:

      (A) preparing a solution (8) for forming an anti-reflection film (2), which contains water and an alkoxide having the formula,



              M(OR) n



      wherein M is Si or a metal selected from the group consisting of Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different,
      (B) coating the solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), and
      (C) applying an ultraviolet light (7) to the solution (8) for forming an anti-reflection film (2) coated on said surface to cure the solution to form a transparent film with fine roughness.

      This production method is carried out using an apparatus having:

      (a) a coating means (3) for coating the above solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1),
      (b) a transferring means (4) for transferring the solution-coated cathode-ray tube (1), and
      (c) an ultraviolet light-applying means (7) for photocuring the solution (8) coated on the cathode-ray tube (1) during the transfer of the solution-coated cathode-ray tube.

      In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum.
      Further embodiments include an antistatic layer and the inclusion of an organic dye into the anti-reflection film.
    • 的防反射膜 - (2)的阴极射线管(1)通过的面板表面上产生:(A)用于防反射成膜的形成制备溶液(8)(2),其包含水和在 具有下式的醇盐,M(OR)n其中M为Si或选自钛,铝,锆,锡,在,Sb和Zn中选择的金属; R是具有1-10个碳原子的烷基; n是从1至8的整数; 且当n不为1,由R表示的烷基可以是涂布溶液(8)相同或不同,(B)为一个cathode-的面板的最外表面上的防反射膜 - (2)的形成 射线管(1),和(C)施加到紫外光(7)到该溶液中(8),用于防反射膜的形成(2)涂覆在所述表面上以固化该溶液,以形成的透明膜,与微细的凹凸。 该制造方法是使用在装置具有:(a)一种涂层装置(3)用于为阴极射线的面板的最外表面上的防反射膜 - (2)的形成(8)涂布上述溶液 (1),(b)一种传递环装置(4),用于传递环的溶液涂覆的阴极射线管(1),以及(c)紫外线光施加装置(7),用于光固化的溶液(8)涂布在管 溶液涂覆的阴极射线管的传输过程中的阴极射线管(1)。 在上述方法中,当硅醇盐用作金属醇盐,也可以得到具有上防反射膜制成的面板的最外表面上的游离碱的二氧化硅,所述防反射的阴极射线管成膜 给出的Si-O-Si峰强度的4个或更多的Si-OH峰强度之比。当测定红外光谱。 其它实施方案包括在抗静电层并且包括有机染料的成抗反射成膜。
    • 5. 发明公开
    • Method and apparatus for forming an anti-reflection film for a cathode-ray tube
    • 形成阴极射线管的抗反射膜的方法和装置
    • EP0533030A3
    • 1993-05-26
    • EP92115338.3
    • 1992-09-08
    • HITACHI, LTD.
    • Oishi, TomojiMaekawa, SachikoKato, AkiraNishizawa, MasahiroTomita, YoshifumiOkude, KojiroTochigi, KenjiMisawa, Yutaka
    • H01J29/89G02B1/10
    • G02B1/11H01J29/896H01J2209/012
    • An anti-reflection film (2) is produced on the panel surface of a cathode-ray tube (1) by:
      (A) preparing a solution (8) for forming an anti-reflection film (2), which contains water and an alkoxide having the formula,
              M(OR) n
      wherein M is Si or a metal selected from the group consisting of Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different, (B) coating the solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), and (C) applying an ultraviolet light (7) to the solution (8) for forming an anti-reflection film (2) coated on said surface to cure the solution to form a transparent film with fine roughness. This production method is carried out using an apparatus having:
      (a) a coating means (3) for coating the above solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), (b) a transferring means (4) for transferring the solution-coated cathode-ray tube (1), and (c) an ultraviolet light-applying means (7) for photocuring the solution (8) coated on the cathode-ray tube (1) during the transfer of the solution-coated cathode-ray tube. In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum. Further embodiments include an antistatic layer and the inclusion of an organic dye into the anti-reflection film.