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    • 1. 发明申请
    • THERMOELECTRIC DEVICE WITH SI/SIC SUPERLATTICE N-LEGS
    • 具有SI / SIC超级电容器的热电偶装置
    • WO2003050878A1
    • 2003-06-19
    • PCT/US2002/040109
    • 2002-12-12
    • HI-Z TECHNOLOGY, INC.GHAMATY, SaiedELSNER, Norbert, B.
    • GHAMATY, SaiedELSNER, Norbert, B.
    • H01L29/06
    • H01L35/22H01L29/155H01L35/32Y10S257/93
    • A superlattice thermoelectric device. The device is comprised of p-legs (60B) and n-legs (60A), each leg being comprised of a large number of at least two different very thin alternating layers of elements (62A, 64A, 66A, 62B, 64B, 66B). The n-legs in the device are comprised of alternating layers of silicon (50) and silicon carbide (48). In preferred embodiments p-legs are comprised of a superlatice of B-C layers, with alternating layers of different stoichiometric forms of B-C. This preferred embodiment is designed to produce 20 Watts with a temperature difference of 300 degrees C with a module efficiency of about 30 percent. The module is about 1 cm thick with a cross section area of about 7 cm 2 and has about 10,000 sets of n and p legs each set of legs about 55 microns thick and having about 5,000 very thin layers (each layer about 10 nm thick).
    • 超晶格热电装置。 该装置由p腿(60B)和n腿(60A)构成,每个腿部由大量至少两个不同的非常薄的交替层元件(62A,64A,66A,62B,64B,66B )。 器件中的n支腿由硅(50)和碳化硅(48)的交替层组成。 在优选实施例中,p支腿由B-C层的超层组成,具有不同化学计量形式的B-C的交替层。 该优选实施例被设计为产生20瓦特,温度差为300摄氏度,模块效率约为30%。 该模块约1厘米厚,横截面积约7厘米2,并且具有大约10,000组n和p腿每组腿约55微米厚并且具有约5,000个非常薄的层(每层约10nm 厚)。