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1. 发明申请

WO2005098970A3 IMPROVED THERMOELECTRIC MODULE WITH Si/SiC AND B4C/B9C SUPER-LATTICE LEGS 审中-公开
标题翻译：改进的Si / SiC和B4C / B9C超级电容器的热电模块
公开(公告)号：WO2005098970A3
公开(公告)日：2007-05-10
申请号：PCT/US2005011491
申请日：2005-04-05
申请人： HI Z TECHNOLOGY INC , GHAMATY SAEID , ELSNER NORBERT B , BASS JOHN C
发明人： GHAMATY SAEID , ELSNER NORBERT B , BASS JOHN C
IPC分类号： H01L35/22 , H01L31/04 , H01L31/042 , H01L35/12 , H01L35/26 , H01L35/28 , H01L35/34
CPC分类号： H01L35/22 , H01L35/26 , H01L35/34
摘要： A super-lattice thermoelectric device. The device is comprised of p-legs and nlegs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of Si and SiC. The p-legs are comprised of alternating layers of B 4 C and B 9 C. In preferred embodiments the layers are about 100 angstroms thick. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10 X 10 egg crate type module about 6 cm X 6cm X 0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C with a module efficiency of about 30 percent. The module has 98 active thermoelectric legs, with each leg having more than 3 million super-lattice layers.
摘要翻译：超晶格热电器件。该装置由p腿和nlegs组成，每条腿由大量具有不同电子带隙的两种材料的非常薄的交替层组成。器件中的n脚由Si和SiC的交替层组成。 P腿由B 4 C和B 9 C的交替层组成。在优选的实施方案中，这些层是约100埃厚。根据本发明制造的热电模块对于冷却应用以及发电都是有用的。该优选实施例是一种约6cm×6cm×0.76cm的热电10×10蛋箱型模块，其设计为产生70瓦，温度差为300摄氏度，模块效率约为30％。该模块具有98个活动热电腿，每个支腿具有超过3百万个超格子层。

2. 发明申请

WO2005097542A3 IMPROVED THERMOELECTRIC MODULE WITH Si/SiGe AND B4C/B9C SUPER-LATTICE LEGS 审中-公开
标题翻译： Si / SiGe和B4C / B9C超级电容器改进的热电模块
公开(公告)号：WO2005097542A3
公开(公告)日：2006-01-12
申请号：PCT/US2005011464
申请日：2005-04-05
申请人： HI Z TECHNOLOGY INC , GHAMATY SAEID , ELSNER NORBERT B , BASS JOHN C
发明人： GHAMATY SAEID , ELSNER NORBERT B , BASS JOHN C
IPC分类号： B60N2/02 , H01L29/15 , H01L35/22 , H01L35/26 , H01L35/32 , H01L35/34 , H01L29/06 , H01L29/36 , H01L31/0328 , H01L31/109
CPC分类号： H01L35/22 , H01L29/155 , H01L35/26 , H01L35/32 , H01L35/34 , Y10S257/93
摘要： A super-lattice thermoelectric device. The device is comprised of p-legs and nlegs, each leg being comprised of a large number of alternating layers of to materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of silicon and silicon germanium. The p-legs are comprised of alternating layers of B
摘要翻译：超晶格热电器件。该装置由p腿和nlegs组成，每条腿由大量具有不同电子带隙的材料的交替层组成。器件中的n脚由硅和硅锗的交替层组成。 p腿由B

3. 发明申请

WO0030185A8 QUANTUM WELL THERMOELECTRIC MATERIAL ON VERY THIN SUBSTRATE 审中-公开
标题翻译：量子很好的热电材料在很薄的衬底上
公开(公告)号：WO0030185A8
公开(公告)日：2000-09-21
申请号：PCT/US9926996
申请日：1999-11-12
申请人： HI Z TECHNOLOGY INC , GHAMATY SAEID , ELSNER NORBERT B
发明人： GHAMATY SAEID , ELSNER NORBERT B
IPC分类号： C23C14/06 , H01L29/06 , H01L35/14 , H01L35/22 , H01L35/26 , H01L35/32 , H01L35/34 , H02N11/00 , H01L35/00 , F25D25/00 , H01L31/0328 , H01L35/28 , H01L35/30
CPC分类号： H01L35/22 , H01L35/26
摘要： Thermoelectric elements (62A, 64A, 66A, 62B, 64B, and 66B) for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin substrate. The layers of semiconductor material aternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton3) coated with an even thinner film of crystalline silicon. The substrate is about .3 mills (127 micons) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton substrate about 3,000 alternating layers of silicon and silicon-germanium, each layer being about 100 ANGSTROM and the total thickness of the layers being about 30 microns.
摘要翻译：用于热电装置的热电元件（62A，64A，66A，62B，64B和66B）。热电元件具有沉积在非常薄的衬底上的非常大量的交替半导体材料层。半导体材料层在势垒半导体材料和导电半导体材料之间迂回，在导电半导体材料的薄层内形成量子阱。导电半导体材料被掺杂以产生导电性质。基材优选应该非常薄，是一种非常好的热和电绝缘体，具有良好的热稳定性和强韧性。在一个优选的实施方案中，薄有机基材是涂覆有更薄的晶体硅膜的薄聚酰亚胺膜（特别是Kapton3）。衬底约为0.3毫米（127微米）厚。晶体硅层约为0.1微米厚。该实施例在薄Kapton衬底的每一侧上包括约3,000个硅和硅 - 锗交替层，每层约100埃，并且层的总厚度约为30微米。

4. 发明申请

WO2005094276A3 UNDERWATER CERAMIC ELECTRODES 审中-公开
标题翻译：水下陶瓷电极
公开(公告)号：WO2005094276A3
公开(公告)日：2006-08-17
申请号：PCT/US2005010089
申请日：2005-03-25
申请人： HI Z TECHNOLOGY INC , INFOSTO NEWTECH OY , METCALFE ARTHUR , ELSNER NORBERT B , MUSTONEN SAKARI
发明人： METCALFE ARTHUR , ELSNER NORBERT B , MUSTONEN SAKARI
IPC分类号： B23K9/00 , B23K9/013
CPC分类号： B23K9/0061
摘要： An underwater torch with a metal infiltrated ceramic electrode for cutting and machining. The electrode has a composition with an empirical formula MB 2-Z +N, wherein 0 2.-Z defines a ceramic structure formed with ceramic and defining a volume with void spaces comprising at least 10 percent of the volume of the matrix structure and the N occupies a portion of the void spaces. A preferred electrode material is ceramic matrix of ZrB 2 slightly enriched in Zr that is infiltrated with copper. Preferred methods of making the composition involves at least two step: First, ZrB 2 (which preferably is slightly enriched in Zr) is formed into a ceramic matrix having a density of up to 96 percent. Second, the ceramic matrix is heated in a pool of copper at a vacuum and at an infiltration temperature of about 1700 degrees C. to permit copper from the pool to infiltrate the ceramic matrix. Preferred processes for making the product are similar to the processes described in the '574 patent. Applicants' tests have shown that conductors made for underwater electric discharge cutting provide good results. However, some significant erosion resulted from the flaking off of ceramic powders at the outer surface of the copper infiltrated electrodes when the surface copper melted during the cutting process. To minimize this problem, Applicants have modified the ceramics in the compositions described in the '547 patent. In a preferred embodiment, the metal content in the voids in the ceramic matrix is reduced from at least 70% to between 10% and 30%. In another preferred embodiment ceramic fibers are used in place of ceramic powders. In a third preferred embodiment ceramic wires such as ZrB 2 wires are utilized instead of the ZrB 2 powder. ZrB 2 wires are preferably prepared using a chemical process to convert the Zr wires to ZrB 2 wires. Bundles of the ZrB 2 wires may then be infiltrated with the copper.
摘要翻译：具有金属渗透陶瓷电极的水下手电筒用于切割和加工。电极具有经验式MB 2 -Z + N的组成，其中0 的陶瓷基体，其被铜渗透。制备组合物的优选方法包括至少两个步骤：首先，将ZrB 2 N（其优选地稍微富集于Zr中）形成为密度高达96％的陶瓷基质。其次，将陶瓷基体在真空中并在大约1700℃的浸入温度下在铜池中加热，以允许来自池的铜渗入陶瓷基体。制造该产品的优选方法类似于'574专利中描述的方法。申请人的测试表明，用于水下放电切割的导体提供了良好的效果。然而，当在切割过程中表面铜熔化时，在铜浸渗电极的外表面剥离陶瓷粉末导致了一些显着的侵蚀。为了最小化这个问题，申请人已经对'547专利中描述的组合物中的陶瓷进行了改性。在优选的实施方式中，陶瓷基体中空隙中的金属含量从至少70％降低到10％至30％之间。在另一个优选实施例中，使用陶瓷纤维代替陶瓷粉末。在第三优选实施例中，使用诸如ZrB 2-Wire的陶瓷丝来代替ZrB 2 N 2粉末。优选使用化学工艺制备ZrB 2线，以将Zr线转化为ZrB 2线。然后可以用铜渗透ZrB 2线的束。

5. 发明申请

WO03050878A9 THERMOELECTRIC DEVICE WITH SI/SIC SUPERLATTICE N-LEGS 审中-公开
标题翻译：具有SI / SIC超级电容器的热电偶装置
公开(公告)号：WO03050878A9
公开(公告)日：2004-04-29
申请号：PCT/US0240109
申请日：2002-12-12
申请人： HI Z TECHNOLOGY INC , GHAMATY SAIED , ELSNER NORBERT B
发明人： GHAMATY SAIED , ELSNER NORBERT B
IPC分类号： H01L29/15 , H01L35/22 , H01L35/32 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L35/22 , H01L29/155 , H01L35/32 , Y10S257/93
摘要： A superlattice thermoelectric device. The device is comprised of p-legs (60B) and n-legs (60A), each leg being comprised of a large number of at least two different very thin alternating layers of elements (62A, 64A, 66A, 62B, 64B, 66B). The n-legs in the device are comprised of alternating layers of silicon (50) and silicon carbide (48). In preferred embodiments p-legs are comprised of a superlatice of B-C layers, with alternating layers of different stoichiometric forms of B-C. This preferred embodiment is designed to produce 20 Watts with a temperature difference of 300 degrees C with a module efficiency of about 30 percent. The module is about 1 cm thick with a cross section area of about 7 cm and has about 10,000 sets of n and p legs each set of legs about 55 microns thick and having about 5,000 very thin layers (each layer about 10 nm thick).
摘要翻译：超晶格热电装置。该装置由p腿（60B）和n腿（60A）构成，每个腿部由大量至少两个不同的非常薄的交替层元件（62A，64A，66A，62B，64B，66B ）。器件中的n支腿由硅（50）和碳化硅（48）的交替层组成。在优选实施例中，p支腿由B-C层的超层组成，具有不同化学计量形式的B-C的交替层。该优选实施例被设计为产生20瓦特，温度差为300摄氏度，模块效率约为30％。模块约1厘米厚，横截面积约7厘米2，并且具有大约10,000组n和p腿每套腿约55微米厚并且具有约5,000个非常薄的层（每层约10nm 厚）。

6. 发明专利

AU1723800A Quantum well thermoelectric material on very thin substrate 未知
公开(公告)号：AU1723800A
公开(公告)日：2000-06-05
申请号：AU1723800
申请日：1999-11-12
申请人： HI Z TECHNOLOGY INC
发明人： GHAMATY SAEID , ELSNER NORBERT B
IPC分类号： C23C14/06 , H01L29/06 , H01L35/14 , H01L35/22 , H01L35/26 , H01L35/32 , H01L35/34 , H02N11/00 , H01L35/00 , F25D25/00 , H01L31/0328 , H01L35/28 , H01L35/30

7. 发明专利

AU2002357242A1 THERMOELECTRIC DEVICE WITH SI/SIC SUPERLATTICE N-LEGS 未知
公开(公告)号：AU2002357242A1
公开(公告)日：2003-06-23
申请号：AU2002357242
申请日：2002-12-12
申请人： HI Z TECHNOLOGY INC
发明人： GHAMATY SAIED , ELSNER NORBERT B
IPC分类号： H01L29/15 , H01L35/22 , H01L35/32 , H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
摘要： A superlattice thermoelectric device. The device includes p-legs and n-legs, each leg includes a large number of at least two different very thin alternating layers of elements. The n-legs in the device includes alternating layers of silicon and silicon carbide. In preferred embodiments p-legs include a superlatice of B-C layers, with alternating layers of different stoichiometric forms of B-C. This preferred embodiment is designed to produce 20 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module is about 1 cm thick with a cross section area of about 7 cm and has about 10,000 sets of n and p legs each set of legs being about 55 microns thick and having about 5,000 very thin layers (each layer about 10 nm thick).

8. 发明专利

AU5158501A Combustion heat powered portable electronic device 未知
公开(公告)号：AU5158501A
公开(公告)日：2001-10-30
申请号：AU5158501
申请日：2001-04-12
申请人： HI Z TECHNOLOGY INC
发明人： ALLEN DANIEL T , BASS JOHN C , ELSNER NORBERT B
IPC分类号： H01L35/02 , H01L35/30 , H01L35/28
摘要： A combustion heat powered portable electronic device. At least one thermoelectric module is sandwiched between a hot block heated by a combustion heat source and a cold-side heat sink and provides electric power to a portable electronic device from the temperature difference. An electric circuit provides power for purposes of operating the portable electronic device either directly or indirectly by charging a rechargeable battery which in turn provides power to the electronic device. In a preferred embodiment the combustion heat source is a catalytic combustion unit. The hot block and/or cold side heat sink can be integrated into a single unit with the thermoelectric module. In a preferred embodiment the cold side heat sink is cooled by fins cooled by air driven by a forced air fan powered by the thermoelectric module.

9. 发明公开

EP2377174A4 HIGH TEMPERATURE, HIGH EFFICIENCY THERMOELECTRIC MODULE 有权
标题翻译：热电高温和高功率模块
公开(公告)号：EP2377174A4
公开(公告)日：2014-01-15
申请号：EP09833805
申请日：2009-12-09
申请人： HI Z TECHNOLOGY INC
发明人： LEAVITT FREDERICK A , ELSNER NORBERT B , BASS JOHN C , MCCOY JOHN W
IPC分类号： H01L35/16 , H01L35/32 , H01L35/34
CPC分类号： H01L35/32 , H01L35/16 , H01L35/34

10. 发明公开

EP1155460A4 QUANTUM WELL THERMOELECTRIC MATERIAL ON VERY THIN SUBSTRATE 审中-公开
标题翻译：热电量子火锅料在非常薄衬底
公开(公告)号：EP1155460A4
公开(公告)日：2006-12-06
申请号：EP99960340
申请日：1999-11-12
申请人： HI Z TECHNOLOGY INC
发明人： GHAMATY SAEID , ELSNER NORBERT B
IPC分类号： C23C14/06 , H01L29/06 , H01L35/14 , H01L35/22 , H01L35/26 , H01L35/32 , H01L35/34 , H02N11/00 , H01L35/00 , F25D25/00 , H01L31/0328 , H01L35/28 , H01L35/30
CPC分类号： H01L35/22 , H01L35/26
摘要： Thermoelectric elements (62A, 64A, 66A, 62B, 64B, and 66B) for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin substrate. The layers of semiconductor material aternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton3) coated with an even thinner film of crystalline silicon. The substrate is about .3 mills (127 micons) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton substrate about 3,000 alternating layers of silicon and silicon-germanium, each layer being about 100 ANGSTROM and the total thickness of the layers being about 30 microns.

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