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    • 3. 发明申请
    • MULTI-READ SENSOR HAVING A NARROW READ GAP STRUCTURE
    • 具有NARROW READ GAP STRUCTURE的多读传感器
    • US20150138668A1
    • 2015-05-21
    • US14596121
    • 2015-01-13
    • HGST Netherlands B.V.
    • Hideki MashimaNobuo YoshidaMasashi HattoriTutomu Yasuda
    • G11B5/39
    • G11B5/3912G11B5/3948
    • In one embodiment, a magnetic head includes at least one magnetoresistive (MR) element positioned at a media-facing surface of the magnetic head, a lower portion of the at least one MR element extending in an element height direction away from the media-facing surface of the magnetic head farther than an upper portion of the at least one MR element, at least one back wiring layer positioned behind the upper portion of the at least one MR element in the element height direction and above the lower portion of the at least one MR element, the at least one back wiring layer being configured to electrically communicate with the at least one MR element, and an upper wiring layer positioned above the at least one MR element at the media-facing surface of the magnetic head and extending in the element height direction away from the media-facing surface of the magnetic head.
    • 在一个实施例中,磁头包括位于磁头的面向媒体的表面上的至少一个磁阻(MR)元件,所述至少一个MR元件的下部沿元件高度方向延伸远离介质面 所述磁头的表面比所述至少一个MR元件的上部更远,至少一个后布线层位于所述元件高度方向上的所述至少一个MR元件的所述上部的后面,并且至少在所述至少一个MR元件的下部 一个MR元件,所述至少一个背面布线层被配置为与所述至少一个MR元件电连通;以及上布线层,位于所述至少一个MR元件上方,位于所述磁头的面向介质的表面处,并且延伸到 元件高度方向远离磁头的面向媒体的表面。
    • 5. 发明授权
    • Multi-sensor (MIMO) head having a back side antiferromagnetic middle shield
    • 具有背面反铁磁中间屏蔽的多传感器(MIMO)头
    • US09269383B1
    • 2016-02-23
    • US14604630
    • 2015-01-23
    • HGST Netherlands B.V.
    • Masashi HattoriKouichi NishiokaTakashi WagatsumaNobuo YoshidaKenichi Meguro
    • G11B5/39
    • G11B5/3932G11B5/3912G11B5/3958G11B5/397G11B5/398
    • According to one embodiment, a magnetic head includes a lower magnetic shield positioned at a media facing surface of the head, a lower sensor positioned above the lower magnetic shield, the lower sensor including a lower free layer, a middle magnetic shield positioned above the lower sensor at the media facing surface of the head, and a back side antiferromagnetic (AFM) layer positioned behind the lower free layer in an element height direction, the back side AFM layer being configured to provide magnetic stabilization for the middle magnetic shield. In another embodiment, a method includes forming a lower sensor including a lower free layer, forming a back side AFM layer behind the lower free layer in an element height direction, and forming a middle magnetic shield above the lower sensor, wherein the back side AFM layer is configured to provide magnetic stabilization for the middle magnetic shield.
    • 根据一个实施例,磁头包括位于头部与介质相对表面的下磁屏蔽,位于下磁屏蔽上方的下传感器,下传感器包括下自由层,位于下部磁屏蔽上方的中间磁屏蔽 传感器在头部的介质面向表面,以及位于元件高度方向上的下自由层之后的后侧反铁磁(AFM)层,后侧AFM层被配置为为中间磁屏蔽提供磁稳定。 在另一个实施例中,一种方法包括形成下部传感器,其包括下自由层,在元件高度方向上在下自由层之后形成背面AFM层,并在下传感器上方形成中间磁屏蔽,其中背侧AFM 层被配置为为中间磁屏蔽提供磁稳定。
    • 6. 发明授权
    • Magnetic head having a long throat height pinned layer with a short height hard bias layer
    • 磁头具有长的喉部高度钉扎层,具有短的高度硬偏置层
    • US09042060B2
    • 2015-05-26
    • US14037254
    • 2013-09-25
    • HGST Netherlands B.V.
    • Nobuo YoshidaHideki MashimaNorihiro IwataTakahiro Ibusuki
    • G11B5/39
    • G11B5/3932G11B5/3909G11B5/3912Y10T29/49032
    • In one embodiment, a magnetic head includes a lower shield, a magnetoresistive (MR) film positioned above the lower shield, the MR film including a pinned layer, an intermediate layer positioned above the pinned layer, and a free layer positioned above the intermediate layer, the free layer being configured for sensing data on a magnetic medium, wherein a track width of the MR film is defined by a width of the free layer in a cross-track direction, a bias layer positioned on both sides of the MR film in the cross-track direction, a track insulating film positioned on both sides of the MR film in the cross-track direction and between the MR film and the bias layer, and an upper shield positioned above the bias layer and the MR film, wherein a length of the free layer in an element height direction perpendicular to an air bearing surface of the magnetic head is less than a length of the pinned layer in the element height direction.
    • 在一个实施例中,磁头包括位于下屏蔽层上方的下屏蔽,磁阻(MR)膜,MR膜包括钉扎层,位于钉扎层上方的中间层和位于中间层上方的自由层 ,所述自由层被配置用于感测磁介质上的数据,其中所述MR膜的轨道宽度由所述自由层在交叉轨道方向上的宽度限定,所述偏置层位于所述MR膜的两侧 交叉轨道方向,位于MR膜的横向方向两侧和MR膜与偏置层之间的轨道绝缘膜,以及位于偏置层和MR膜上方的上屏蔽,其中a 在与磁头的空气支承面垂直的元件高度方向上的自由层的长度小于被钉扎层在元件高度方向上的长度。
    • 7. 发明授权
    • Multi-read sensor having a narrow read gap structure
    • 具有窄读取间隙结构的多读传感器
    • US08953284B1
    • 2015-02-10
    • US14085734
    • 2013-11-20
    • HGST Netherlands B.V.
    • Hideki MashimaNobuo YoshidaMasashi HattoriTutomu Yasuda
    • G11B5/39
    • G11B5/3912G11B5/3948
    • In one embodiment, a magnetic head includes a lower shield layer positioned at a media-facing surface of the magnetic head, at least two magnetoresistive (MR) elements positioned above the lower shield layer, each MR element extending in an element height direction away from the media-facing surface of the magnetic head, back wiring layers positioned above at least one lower layer of each of the MR elements at a position away from the media-facing surface of the magnetic head in the element height direction, wherein the back wiring layers are configured to electrically communicate with the MR elements and configured to separately extract signals from each MR element during a read operation, and an upper shield layer positioned above the MR elements that is configured to electrically communicate with the MR elements.
    • 在一个实施例中,磁头包括位于磁头的面向介质表面的下屏蔽层,位于下屏蔽层上方的至少两个磁阻(MR)元件,每个MR元件沿元件高度方向延伸远离 所述磁头的面向介质的表面,背面布线层位于远离所述磁头的与所述介质相对表面在元件高度方向上的位置的每个所述MR元件的至少一个下层之上,其中所述背面布线 层被配置为与MR元件电通信并且被配置为在读取操作期间单独提取来自每个MR元件的信号,以及位于配置为与MR元件电连通的MR元件之上的上屏蔽层。