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    • 3. 发明申请
    • NANOWIRE HETEROSTRUCTURES AND METHODS OF FORMING THE SAME
    • 纳米结构及其形成方法
    • WO2008018907A2
    • 2008-02-14
    • PCT/US2007/001990
    • 2007-01-26
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P.KAMINS, Theodore IBRATKOVSKI, Alexandre MSHASHANK, Sharma
    • KAMINS, Theodore IBRATKOVSKI, Alexandre MSHASHANK, Sharma
    • G01N21/658B82Y15/00B82Y20/00G02B6/107
    • A NERS-active structure (100, 101, 102, 103) is disclosed that includes at least one heterostructure nanowire (120, 121, 220). The at least one heterostructure nanowire (120, 121, 220) may include alternating segments (140, 150) of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments (150, 151 ) may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire (220) may include a core (240) with alternating coatings (250, 260) of an NERS- inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure (100, 101, 102, 103). Also disclosed are methods for forming a NERS-active structure (100, 101, 102, 103) and methods for performing NERS with NERS-active structures (100, 101, 102, 103).
    • 公开了包括至少一个异质结构纳米线(120,121,220)的NERS活性结构(100,101,102,103)。 所述至少一个异质结构纳米线(120,121,220)可包括NERS非活性材料和轴向上的NERS-活性材料的交替段(140,150)。 或者,交替的段(150,151)可以是NERS非活性材料和能够吸引NERS-活性材料的纳米颗粒的材料。 在另一个替代方案中,异质结构纳米线(220)可以包括具有NERS非活性材料的交替涂层(250,260)和径向方向上的NERS-活性材料的芯(240)。 还公开了一种NERS系统,其包括NERS-活动结构(100,101,102,103)。 还公开了形成NERS-活性结构(100,101,102,103)的方法以及用NERS-活性结构(100,101,102,103)进行NERS的方法。