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    • 3. 发明申请
    • OPTICAL COMPONENT MADE OF QUARTZ GLASS FOR USE IN ARF EXCIMER LASER LITHOGRAPHY, AND METHOD FOR PRODUCING THE COMPONENT
    • 光学部件QUARZGLAS FOR USE IN ArF准分子激光光刻法和制造方法COMPONENT
    • WO2014128148A3
    • 2014-11-27
    • PCT/EP2014053199
    • 2014-02-19
    • HERAEUS QUARZGLASSHINETSU QUARTZ PROD
    • KUEHN BODO
    • C03C4/00C03B19/01C03B19/14C03B20/00C03B32/00C03C3/06G02B1/00G02B1/02
    • C03C3/06C03B19/1453C03B32/00C03B32/02C03B2201/07C03B2201/075C03B2201/21C03B2201/23C03B2201/24C03C4/04C03C2201/11C03C2201/12C03C2201/21C03C2201/23C03C2201/24C03C2203/54C03C2204/00G02B1/00G02B1/02Y02P40/57
    • The invention relates to an optical component made of synthetic quartz glass for use in an ArF excimer laser lithography process with an applied wavelength of 193 nm, comprising a glass structure substantially free of oxygen defect sites, a hydrogen content ranging from 0.1 x 1016 molecules/cm3 to 1.0 x 1018 molecules/cm3, an SiH group content of less than 2 x 1017 molecules/cm3, and a hydroxyl group content ranging from 0.1 to 100 wt. ppm, said glass structure having a fictive temperature of less than 1070 °C. The aim of the invention is to allow a reliable prediction of the compacting behavior when using UV laser radiation with the applied wavelength on the basis of a measurement of the compacting behavior using a measured wavelength of 633 nm. This is achieved by an optical component design in which the component undergoes a laser-induced change in the refractive index in response to irradiation by means of a radiation with a wavelength of 193 nm using 5x109 pulses with a pulse width of 125 ns and a respective energy density of 500 µJ/cm2 at a pulse repetition frequency of 2000 Hz, said change totaling a first measured value M193nm when measured using the applied wavelength of 193 nm and totaling a second measured value M633nm when measured using a measured wavelength of 633 nm, wherein M193nm/M633nm
    • 本发明涉及一种用于在ArF准分子激光光刻法使用具有193nm的波长使用的光合成的石英玻璃部件,用玻璃结构基本没有氧缺陷,在0.1×1016分子/立方厘米至1的范围内的氢含量 0×1018分子/厘米3,SiH基团的含量小于2×1017摩尔/厘米3,并且具有羟基的0.1重量和100ppm之间的范围内,其中所述玻璃结构的含量为少的假想温度 具有1070℃ 为了在633测量波长为使得能够与所使用的波长的紫外激光辐射使用时,压实行为的可靠预测从Kompaktierungsverhaltens的测量开始,该光学装置的结构,提出了,这是对照射的193纳米与5×10 9的波长的辐射 用的125毫微秒的脉冲宽度和各500μJ/ cm 2的能量密度和2000Hz的与折射率的激光诱导的变化的脉冲重复频率的脉冲进行反应,所述量在测量用的193nm的第一测量值M193nm和测量与633nm的测定波长使用波长 第二测量值M633nm的产率,其中:M193nm / M633nm <1.7。