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1. 发明公开

EP1683584A3 Apparatus for improving silicon processing efficiency 有权
标题翻译： Vorrichtung zur Verbesserung der Effizienz der Behandlung von Silicium
公开(公告)号：EP1683584A3
公开(公告)日：2008-11-12
申请号：EP06075971.9
申请日：2003-08-19
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Graham, Todd Stanley , Messner, Kathryn Elizabeth , Schmidt, Chris Tim , Horstman, Terence Lee
IPC分类号： B07B13/02 , B07B13/04 , C30B15/02 , C30B29/06
CPC分类号： G01N15/0272 , B07B13/02 , B07B13/04 , C30B15/02 , G01N2015/0288
摘要： A rotary indent classifier for processing polycristalline silicon workpieces includes: (i) a rotating cylinder having a circumferential edge with indents arrayed in increasing size from a first end of the cylinder to a second end of the cylinder, and (ii) a conveyor running longitudinally adjacent the cylinder, for conveying silicon pieces from the first end of the cylinder to the second end of the cylinder.
摘要翻译：一种用于处理多晶硅工件以形成适用于切克劳斯基型工艺的多晶硅片的尺寸分布的方法包括：（1）通过化学气相沉积工艺制备多晶硅工件; （2）将多晶硅工件压裂成多晶硅片的混合物，其中多晶硅片具有不同的尺寸; 和（3）将多晶硅片的混合物分选成至少两个尺寸分布。步骤（2）可以通过热冲击过程进行。步骤（3）可以使用旋转凹口分类器进行。一种用于执行该方法的旋转凹口分选机包括：（i）旋转圆筒，其具有沿圆柱体的第一端至第二端的尺寸排列的凹口的圆周边缘，以及（ii）纵向相邻的输送机气缸，用于将硅片从气缸的第一端输送到气缸的第二端。

2. 发明公开

EP1391252A1 Method and apparatus for improving silicon processing efficiency 有权
标题翻译： Verfahren zur Verbesserung der Effizienz der Behandlung von Silicium
公开(公告)号：EP1391252A1
公开(公告)日：2004-02-25
申请号：EP03255135.0
申请日：2003-08-19
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Graham, Todd Stanley , Messner, Kathryn Elizabeth , Schmidt, Chris Tim , Horstman, Terence Lee
IPC分类号： B07B13/02 , B07B13/04 , C30B15/02 , C30B29/06
CPC分类号： G01N15/0272 , B07B13/02 , B07B13/04 , C30B15/02 , G01N2015/0288
摘要： A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier. A rotary indent classifier for performing the method includes: (i) a rotating cylinder having a circumferential edge with indents arrayed in increasing size from a first end of the cylinder to a second end of the cylinder, and (ii) a conveyor running longitudinally adjacent the cylinder, for conveying silicon pieces from the first end of the cylinder to the second end of the cylinder.
摘要翻译：一种用于处理多晶硅工件以形成适用于切克劳斯基型工艺的多晶硅片的尺寸分布的方法包括：（1）通过化学气相沉积工艺制备多晶硅工件; （2）将多晶硅工件压裂成多晶硅片的混合物，其中多晶硅片具有不同的尺寸; 和（3）将多晶硅片的混合物分选成至少两个尺寸分布。步骤（2）可以通过热冲击过程进行。步骤（3）可以使用旋转凹口分类器进行。一种用于执行该方法的旋转凹口分选机包括：（i）旋转圆筒，其具有沿圆柱体的第一端至第二端的尺寸排列的凹口的圆周边缘，以及（ii）纵向相邻的输送机气缸，用于将硅片从气缸的第一端输送到气缸的第二端。

3. 发明授权

EP1553214B1 Flowable chips and methods for using them 有权
标题翻译：流动性的芯片和使用iher方法
公开(公告)号：EP1553214B1
公开(公告)日：2011-11-23
申请号：EP05075441.5
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale, Jr.
IPC分类号： B07B13/04 , C30B15/02
CPC分类号： C30B15/02 , C30B29/06

4. 发明公开

EP1553214A2 Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods 有权
标题翻译： FliessfähigeSpäneund Verfahren zu iher Verwendung
公开(公告)号：EP1553214A2
公开(公告)日：2005-07-13
申请号：EP05075441.5
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale, Jr.
IPC分类号： C30B15/02
CPC分类号： C30B15/02 , C30B29/06
摘要： A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.
摘要翻译：用多晶硅对坩埚再充电的方法包括将可流动的芯片添加到在切克劳斯基型工艺中使用的坩埚中。可流动的芯片是通过化学气相沉积工艺制备的由多晶硅制成的多晶硅颗粒，并且可流动的芯片具有受控的粒度分布，通常为非球形形态，低水平的主体杂质和低水平的表面杂质。可以使用常规的进料设备（例如振动给料机系统和罐式给料机）将可流动的切屑加入到坩埚中。

5. 发明授权

EP1338682B1 Flowable chips and methods and apparatus for their preparation and use of same 有权
标题翻译：它们的制备和它们的用途可流动的芯片，方法和装置
公开(公告)号：EP1338682B1
公开(公告)日：2006-12-27
申请号：EP03250759.2
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale Jr.
IPC分类号： B07B13/04 , C30B15/02
CPC分类号： C30B15/002 , B07B1/4654 , B07B13/04 , C30B11/001 , C30B11/003 , C30B15/02 , C30B15/04 , C30B29/06 , Y10T117/1056
摘要： A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

6. 发明公开

EP1338682A2 Flowable chips and methods and apparatus for their preparation and use of same 有权
标题翻译：它们的制备和它们的用途可流动的芯片，方法和装置
公开(公告)号：EP1338682A2
公开(公告)日：2003-08-27
申请号：EP03250759.2
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale Jr.
IPC分类号： C30B15/02 , C30B29/06
CPC分类号： C30B15/002 , B07B1/4654 , B07B13/04 , C30B11/001 , C30B11/003 , C30B15/02 , C30B15/04 , C30B29/06 , Y10T117/1056
摘要： A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

7. 发明公开

EP0334664A3 Recovery of lower-boiling silanes in A CVD process 失效
标题翻译：在CVD过程中回收低沸点硅烷
公开(公告)号：EP0334664A3
公开(公告)日：1990-09-05
申请号：EP89302944.7
申请日：1989-03-23
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Pasek, David John
IPC分类号： C23C16/24 , C23C16/44 , C01B33/04 , C01B33/107
CPC分类号： C23C16/44 , C01B33/10773 , C23C16/24
摘要： A process for the deposition of pure semiconductor silicon by reductive chemical vapor decomposition of a precursor silane, the process comprising:
(1) forming and depositing semiconductor silicon on a heated substrate; (2) separating a mixture enriched in lower-boiling silanes from the effluent gases from the decomposition/ deposition reactor; (3) combining the mixture enriched in lower-boiling silanes with additional tetrachlorosilane, so that there is present in the combination less than about 1.0 mole hydrogen bonded to silicon per mole of total silicon; (4) passing the combination through a bed of a solid disproportionation catalyst to facilitate disproportionation of hydrogen-containing silanes and chlorine-containing silanes to produce a stream that is reduced in content of silane, chlorosilane and dichlorosilane and increased in content of trichlorosilane; and (5) isolating and separating the trichlorosilane.

8. 发明公开

EP1683584A2 Apparatus for improving silicon processing efficiency 有权
标题翻译： Vorrichtung zur Verbesserung der Effizienz der Behandlung von Silicium
公开(公告)号：EP1683584A2
公开(公告)日：2006-07-26
申请号：EP06075971.9
申请日：2003-08-19
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Graham, Todd Stanley , Messner, Kathryn Elizabeth , Schmidt, Chris Tim , Horstman, Terence Lee
IPC分类号： B07B13/02 , B07B13/04 , C30B15/02 , C30B29/06
CPC分类号： G01N15/0272 , B07B13/02 , B07B13/04 , C30B15/02 , G01N2015/0288
摘要： A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier. A rotary indent classifier for performing the method includes: (i) a rotating cylinder having a circumferential edge with indents arrayed in increasing size from a first end of the cylinder to a second end of the cylinder, and (ii) a conveyor running longitudinally adjacent the cylinder, for conveying silicon pieces from the first end of the cylinder to the second end of the cylinder.
摘要翻译：一种用于处理多晶硅工件的旋转凹口分级器包括：（i）具有周向边缘的旋转圆筒，其具有从圆柱体的第一端到圆柱体的第二端的尺寸排列的凹口，以及（ii）沿纵向延伸的输送器邻近气缸，用于将硅片从气缸的第一端输送到气缸的第二端。

9. 发明公开

EP1338682A3 Flowable chips and methods and apparatus for their preparation and use of same 有权
标题翻译：它们的制备和它们的用途可流动的芯片，方法和装置
公开(公告)号：EP1338682A3
公开(公告)日：2004-01-28
申请号：EP03250759.2
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale Jr.
IPC分类号： B07B13/04 , C30B15/02
CPC分类号： C30B15/002 , B07B1/4654 , B07B13/04 , C30B11/001 , C30B11/003 , C30B15/02 , C30B15/04 , C30B29/06 , Y10T117/1056
摘要： A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.
摘要翻译：一种用于与充电多晶硅的坩埚方法包括将可流动的芯片在切克拉斯基型方法中所用的坩埚。可流动的芯片是由通过化学气相沉积工艺制备的多晶硅制成的多晶硅颗粒，和可流动的芯片具有受控的粒度分布，基因反弹非球形形态，低水平的散装杂质和表面杂质的低的水平。可流动的芯片可以被添加到使用常规馈线设备,:如振动供料器系统和罐馈系统的坩埚中。

10. 发明公开

EP0334664A2 Recovery of lower-boiling silanes in A CVD process 失效
标题翻译： Rückgewinnungniedrig siedender Silane在einem CVD-Verfahren。
公开(公告)号：EP0334664A2
公开(公告)日：1989-09-27
申请号：EP89302944.7
申请日：1989-03-23
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Pasek, David John
IPC分类号： C23C16/24 , C23C16/44 , C01B33/04 , C01B33/107
CPC分类号： C23C16/44 , C01B33/10773 , C23C16/24
摘要： A process for the deposition of pure semiconductor silicon by reductive chemical vapor decomposition of a precursor silane, the process comprising:

(1) forming and depositing semiconductor silicon on a heated substrate;
(2) separating a mixture enriched in lower-boiling silanes from the effluent gases from the decomposition/ deposition reactor;
(3) combining the mixture enriched in lower-boiling silanes with additional tetrachlorosilane, so that there is present in the combination less than about 1.0 mole hydrogen bonded to silicon per mole of total silicon;
(4) passing the combination through a bed of a solid disproportionation catalyst to facilitate disproportionation of hydrogen-containing silanes and chlorine-containing silanes to produce a stream that is reduced in content of silane, chlorosilane and dichlorosilane and increased in content of trichlorosilane; and
(5) isolating and separating the trichlorosilane.
摘要翻译：一种用于通过前体硅烷的还原化学气相分解沉积纯半导体硅的方法，该方法包括：（1）在加热的衬底上形成和沉积半导体硅; （2）从分解/沉积反应器的流出气体中分离富含低沸点硅烷的混合物; （3）将富含低沸点硅烷的混合物与另外的四氯硅烷组合，使得组合中存在小于约1.0摩尔与每摩尔总硅结合的氢的氢键; （4）使组合物通过固体歧化催化剂床，以促进含氢硅烷和含氯硅烷的歧化，以产生降低硅烷，氯硅烷和二氯硅烷含量并增加三氯硅烷含量的物流; 和（5）分离和分离三氯硅烷。 [R

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