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1. 发明申请

WO2008123869A3 MILLIMETER-LONG NANOWIRES 审中-公开
标题翻译：米兰长鼻子
公开(公告)号：WO2008123869A3
公开(公告)日：2008-12-04
申请号：PCT/US2007024222
申请日：2007-11-20
申请人： HARVARD COLLEGE , PARK WON IL , ZHENG GENGFENG , JIANG XIAOCHENG , TIAN BOZHI , LIEBER CHARLES M
发明人： PARK WON IL , ZHENG GENGFENG , JIANG XIAOCHENG , TIAN BOZHI , LIEBER CHARLES M
IPC分类号： H01L29/06 , C30B29/06 , H01L21/20 , H01L29/16
CPC分类号： H01L29/0665 , B82Y10/00 , C30B25/00 , C30B25/18 , C30B29/06 , C30B29/60 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02573 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/16 , H01L29/1602
摘要： The present invention generally relates to wires, including nanowires such as semiconductor nanowires, which may be a single crystal in some cases. In one aspect, the present invention is generally directed to a relatively long semiconductor wire. The semiconductor wire may have a length of at least about 10 micrometers, at least about 100 micrometers, or even at least about 1 mm. In certain cases, the semiconductor wire has an aspect ratio of at least about 50,000. In some embodiments, the semiconductor wire has no more than 1 grain boundary per micrometer, and in certain embodiments, the semiconductor wire is a single crystal. In many instances, the semiconductor wire also has a substantially uniform diameter. Other aspects of the invention are directed to techniques for forming such semiconductor wires, e.g., using chemical vapor deposition, as well as devices including such semiconductor wires. For instance, one embodiment of the invention provides an electronic device having at least 50 transistors on a common nanoscale wire.
摘要翻译：本发明一般涉及包括诸如半导体纳米线的纳米线的导线，在某些情况下，其可以是单晶。一方面，本发明一般涉及一种较长的半导体线。半导体线可以具有至少约10微米，至少约100微米，或甚至至少约1mm的长度。在某些情况下，半导体线具有至少约50,000的纵横比。在一些实施例中，半导体线具有每微米不超过1个晶界，并且在某些实施例中，半导体线是单晶。在许多情况下，半导体线也具有基本均匀的直径。本发明的其它方面涉及用于形成这种半导体线的技术，例如使用化学气相沉积，以及包括这种半导体线的器件。例如，本发明的一个实施例提供一种在共同的纳米线上具有至少50个晶体管的电子器件。

2. 发明申请

WO2008033303A3 BRANCHED NANOSCALE WIRES 审中-公开
标题翻译：分支纳米线
公开(公告)号：WO2008033303A3
公开(公告)日：2008-05-29
申请号：PCT/US2007019669
申请日：2007-09-11
申请人： HARVARD COLLEGE , LIEBER CHARLES M , TIAN BOZHI , JIANG XIAOCHENG
发明人： LIEBER CHARLES M , TIAN BOZHI , JIANG XIAOCHENG
IPC分类号： H01L21/20
CPC分类号： B82Y30/00 , H01L21/02381 , H01L21/02428 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645
摘要： The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires. In some cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. Branched nanoscale wires may be grown by depositing nanoparticles onto a nanoscale wire, and segments or "branches" can then be grown from the nanoparticles. The nanoscale wire may be any nanoscale wire, for example, a semiconductor nanoscale wire, a nanoscale wire having a core and a shell. The segments may be of the same, or of different materials, than the nanoscale wire, for example, semiconductor/metal, semiconductor/semiconductor. The junction between the segment and the nanoscale wire, in some cases, is epitaxial. In one embodiment, the nanoparticles are adsorbed onto the nanoscale wire by immobilizing a positively-charged entity, such as polylysine, to the nanoscale wire, and exposing it to the nanoparticles. In another embodiment, nanoparticles are deposited onto a nanoscale wire by etching the nanoscale wire to produce an H- terminated surface, then exposing the surface to a solution comprising a metal ion, which can be reduced by the surface to form nanoparticles. Segments or branches can then be grown from the deposited nanoparticles to form the branched nanoscale wire.
摘要翻译：本发明一般涉及纳米技术，特别涉及分支纳米尺寸的导线。在一些情况下，可以使用气相和/或溶液相合成制备支化纳米线。可以通过将纳米尺寸的纳米线沉积到纳米线上来生长分支的纳米线，然后可以从纳米颗粒生长片段或“分支”。纳米线可以是任何纳米尺寸的线，例如半导体纳米级线，具有芯和壳的纳米线。这些片段可以与纳米尺寸线材（例如半导体/金属，半导体/半导体）相同或不同的材料。在一些情况下，段和纳米线之间的接合是外延的。在一个实施方案中，通过将带正电荷的实体（例如聚赖氨酸）固定到纳米线上并将其暴露于纳米颗粒，将纳米颗粒吸附到纳米级线上。在另一个实施方案中，通过蚀刻纳米尺度线以产生H终止的表面，然后将表面暴露于包含金属离子的溶液中，将纳米级纳米线沉积到纳米级线上，该溶液可以被表面还原以形成纳米颗粒。然后可以从沉积的纳米颗粒生长段或分枝以形成分支的纳米级线。

3. 发明申请

WO2012170630A2 NANOSCALE WIRES, NANOSCALE WIRE FET DEVICES, AND NANOTUBE-ELECTRONIC HYBRID DEVICES FOR SENSING AND OTHER APPLICATIONS 审中-公开
标题翻译：纳米线，纳米线路器件和用于感测和其他应用的纳米电子电子混合器件
公开(公告)号：WO2012170630A2
公开(公告)日：2012-12-13
申请号：PCT/US2012041253
申请日：2012-06-07
申请人： HARVARD COLLEGE , LIEBER CHARLES M , DUAN XIAOJIE , GAO RUIXUAN , XIE PING , JIANG XIAOCHENG
发明人： LIEBER CHARLES M , DUAN XIAOJIE , GAO RUIXUAN , XIE PING , JIANG XIAOCHENG
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L51/0512 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G01N27/4146 , G01R1/02 , H01L29/0676 , H01L29/775 , H01L51/0002
摘要： The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.
摘要翻译：本发明一般涉及纳米技术，包括场效应晶体管和用作传感器（例如，用于电生理研究），纳米管结构和应用的其它器件。本发明的某些方面通常涉及诸如场效应晶体管和其它类似装置的晶体管。在一组实施例中，使用场效应晶体管，其中纳米线例如硅纳米线用作将源电极连接到漏电极的晶体管沟道。在一些情况下，晶体管沟道的一部分暴露于要被确定的环境，例如，单元的内部或胞质溶胶。纳米管或其它合适的流体通道可以从晶体管通道延伸到合适的环境中，例如电池内的容纳环境，使得环境经由流体通道与晶体管通道电连通。在一些实施例中，晶体管沟道的其余部分可以被涂覆，例如，使得晶体管沟道的电学特性反映了流体通道与之通信的环境的电气行为。本发明的其他方面通常涉及制造这种传感器的方法，使用这种传感器的方法，涉及这种传感器的套件等。

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