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1. 发明申请

US20070296003A1 Thin Film Transistor Substrate and Method for Manufacturing the Same 审中-公开
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20070296003A1
公开(公告)日：2007-12-27
申请号：US11760495
申请日：2007-06-08
申请人： Gyung-Soon Park , Chun-Gi You , Kyung-Kim Park , Hyun-Sik Yoon
发明人： Gyung-Soon Park , Chun-Gi You , Kyung-Kim Park , Hyun-Sik Yoon
IPC分类号： H01L29/76
CPC分类号： H01L29/4908 , H01L27/1255 , H01L29/42384 , H01L29/78621
摘要： A thin-film transistor (TFT) substrate includes a base substrate, a semiconductor layer, a gate insulating layer, a first gate electrode and a second gate electrode. The semiconductor layer is formed on the base substrate and includes source, drain, channel and low concentration doped regions. The channel region is formed between the source and drain regions. The low concentration doped region is formed between the source and channel regions and between the drain and channel regions. The gate insulating layer is formed on the semiconductor layer. The first gate electrode is formed on the gate insulating layer to be overlapped with the channel region. The second gate electrode is formed on the second gate electrode. The gate insulating layer includes first and second regions, and a thickness of the first region is thinner than that of the second region. Thus, electric characteristics of the TFT may be enhanced.
摘要翻译：薄膜晶体管（TFT）基板包括基底基板，半导体层，栅极绝缘层，第一栅电极和第二栅电极。半导体层形成在基底衬底上，包括源极，漏极，沟道和低浓度掺杂区域。沟道区形成在源区和漏区之间。在源极和沟道区之间以及漏极和沟道区之间形成低浓度掺杂区。栅极绝缘层形成在半导体层上。第一栅电极形成在栅极绝缘层上以与沟道区重叠。第二栅电极形成在第二栅电极上。栅极绝缘层包括第一和第二区域，并且第一区域的厚度比第二区域的厚度薄。因此，可以提高TFT的电特性。

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