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1. 发明授权

US07176049B2 Method of increasing a free carrier concentration in a semiconductor substrate 失效
公开(公告)号：US07176049B2
公开(公告)日：2007-02-13
申请号：US10845589
申请日：2004-05-14
申请人： Gyoung Ho Buh , Ji-Sang Yahng , Yu Gyun Shin , Guk-Hyon Yon , Sangjin Hyun
发明人： Gyoung Ho Buh , Ji-Sang Yahng , Yu Gyun Shin , Guk-Hyon Yon , Sangjin Hyun
IPC分类号： H01L21/00
CPC分类号： H01L21/266 , H01L21/2022 , H01L21/26513 , H01L21/268 , H01L21/2686 , H01L21/28211 , H01L21/324 , H01L21/76232 , H01L21/823462 , H01L21/823481
摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

2. 发明授权

US07485554B2 Method of increasing a free carrier concentration in a semiconductor substrate 失效
标题翻译：增加半导体衬底中自由载流子浓度的方法
公开(公告)号：US07485554B2
公开(公告)日：2009-02-03
申请号：US11655916
申请日：2007-01-22
申请人： Gyoung Ho Buh , Ji-Sang Yahng , Yu Gyun Shin , Guk-Hyon Yon , Sangjin Hyun
发明人： Gyoung Ho Buh , Ji-Sang Yahng , Yu Gyun Shin , Guk-Hyon Yon , Sangjin Hyun
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/266 , H01L21/2022 , H01L21/26513 , H01L21/268 , H01L21/2686 , H01L21/28211 , H01L21/324 , H01L21/76232 , H01L21/823462 , H01L21/823481
摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.
摘要翻译：选择性地加热半导体衬底的预定区域的方法包括提供半导体衬底，将仅自由载流子产生光选择性地聚焦在半导体衬底的预定区域上，将半导体衬底的预定区域上的自由载流子产生光照射到增加半导体衬底的预定区域内的自由载流子浓度，其中自由载流子产生光使预定区域的温度升高小于改变预定区域的固相所需的温度，并且将半导体衬底照射加热光，以选择性地加热半导体衬底的预定区域。

3. 发明授权

US07141116B2 Method for manufacturing a silicon structure 有权
标题翻译：硅结构的制造方法
公开(公告)号：US07141116B2
公开(公告)日：2006-11-28
申请号：US11095496
申请日：2005-04-01
申请人： Yong Hoon Son , Jae Young Park , Cha Dong Yeo , Jong Wook Lee , Yu Gyun Shin
发明人： Yong Hoon Son , Jae Young Park , Cha Dong Yeo , Jong Wook Lee , Yu Gyun Shin
IPC分类号： C30B25/12
CPC分类号： C30B1/023
摘要： Provided are improved methods for forming silicon films, particularly single-crystal silicon films from amorphous silicon films in which a single-crystal silicon substrate is prepared by removing any native oxide, typically using an aqueous HF solution, and placed in a reaction chamber. The substrate is then heated from about 350° C. to a first deposition temperature under a first ambient to induce single-crystal epitaxial silicon deposition primarily on exposed silicon surfaces. The substrate is then heated to a second deposition temperature under a second ambient that will maintain the single-crystal epitaxial silicon deposition on exposed single-crystal silicon while inducing amorphous epitaxial silicon deposition on insulating surfaces. The amorphous epitaxial silicon can then be converted to single-crystal silicon using a solid phase epitaxy process to form a thin, high quality silicon layer. The first and second ambients include at least one silicon source gas and may include a non-oxidizing carrier gas.
摘要翻译：提供了用于形成硅膜，特别是来自非晶硅膜的单晶硅膜的改进方法，其中通过除去任何天然氧化物（通常使用HF水溶液）并置于反应室中制备单晶硅衬底。然后将衬底在第一个环境下从约350℃加热到第一沉积温度，以主要在暴露的硅表面上引发单晶外延硅沉积。然后将衬底在第二环境下被加热到第二沉积温度，其将在暴露的单晶硅上保持单晶外延硅沉积，同时在绝缘表面上诱导非晶外延硅沉积。然后可以使用固相外延工艺将非晶外延硅转化为单晶硅，以形成薄的，高质量的硅层。第一和第二环境包括至少一个硅源气体并且可以包括非氧化性载气。

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