专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US3960559A Method of making a semiconductor device utilizing a light-sensitive etching agent 失效
标题翻译：制造利用感光蚀刻剂的半导体器件的方法
公开(公告)号：US3960559A
公开(公告)日：1976-06-01
申请号：US406986
申请日：1973-10-16
申请人： Gyoji Suzuki , Masayoshi Nagata , Takeshi Tomotsu , Hisatake Ono
发明人： Gyoji Suzuki , Masayoshi Nagata , Takeshi Tomotsu , Hisatake Ono
IPC分类号： C09K13/04 , C23F1/00 , C23F1/10 , G03F7/004 , G03F7/039 , G03F7/26 , H01L21/00 , H01L21/306 , H01L23/29 , C09K13/08
CPC分类号： H01L21/00 , G03F7/0041 , H01L23/291 , H01L2924/0002 , Y10S430/109 , Y10S430/11
摘要： A light-sensitive etching agent comprising (a) a photodecomposable compound forming upon decomposition a material capable of etching a silicon compound containing film or capable of etching the film after reaction with another material, (b) a material capable of forming water upon exposure to light, (c) a binder and (d) a solvent, and a method of making a semiconductor device utilizing the light-sensitive etching agent.
摘要翻译：一种感光蚀刻剂，其包含（a）在分解时能够蚀刻含有硅化合物的膜或能够与其他材料反应后蚀刻所述膜的材料形成的光可分解化合物，（b）在暴露于光，（c）粘合剂和（d）溶剂，以及制造利用光敏蚀刻剂的半导体器件的方法。

2. 发明授权

US3992208A Photo-sensitive etchant and method for forming metal image using same 失效
标题翻译：光敏蚀刻剂和使用其形成金属图像的方法
公开(公告)号：US3992208A
公开(公告)日：1976-11-16
申请号：US450514
申请日：1974-03-12
申请人： Masayoshi Nagata , Gyoji Suzuki , Takeshi Tomotsu
发明人： Masayoshi Nagata , Gyoji Suzuki , Takeshi Tomotsu
IPC分类号： G03F7/004 , G03C5/00
CPC分类号： G03F7/0041
摘要： A photo-sensitive etchant comprising (1) a first composition comprising a substance capable of producing water upon exposure to light, a binder and a solvent and (2) a second composition comprising a compound capable of producing, upon exposure to light, a metal-etching substance or a substance which reacts with another other substance to form a metal-etching product, a binder and a solvent; and a method for forming metal image by using the photosensitive etchant.
摘要翻译：一种光敏蚀刻剂，包括（1）第一组合物，其包含在暴露于光时能够产生水的物质，粘合剂和溶剂;以及（2）第二组合物，其包含能够在暴露于光时产生金属的化合物 - 与其他物质反应形成金属蚀刻产物，粘合剂和溶剂的物质或物质; 以及通过使用感光蚀刻剂形成金属图像的方法。

3. 发明授权

US3935117A Photosensitive etching composition 失效
标题翻译：感光蚀刻组合物
公开(公告)号：US3935117A
公开(公告)日：1976-01-27
申请号：US419010
申请日：1973-11-26
申请人： Gyoji Suzuki , Takeshi Tomotsu
发明人： Gyoji Suzuki , Takeshi Tomotsu
IPC分类号： C03C15/00 , H01L21/00 , H01L21/316 , H01L21/318 , C09K13/00 , G03C5/00
CPC分类号： H01L21/3185 , C03C15/00 , H01L21/00 , H01L21/316
摘要： A method of forming patterns on a semiconductor element is disclosed comprising the steps of (a) depositing a coating of silicon nitride, borosilicate glass, or phosphosilicate glass on the surface of a semiconductor substrate, (b) applying a photosensitive etching solution layer to the coating and drying it, (c) irradiating the substrate with ultraviolet radiation through a photomask having a required pattern to decompose the photosensitive solution and etch the coating, and (d) removing the photosensitive solution, the decomposed material, and the reaction product of the decomposed material and the coating with an organic solvent. The photosensitive etching solution consists of a compound which may be decomposed by light to a material which etches the coating, or a compound obtained from the reaction between the photodecomposed material and other material in the solution which etches said coating.
摘要翻译：公开了一种在半导体元件上形成图案的方法，包括以下步骤：（a）在半导体衬底的表面上沉积氮化硅，硼硅酸盐玻璃或磷硅玻璃的涂层，（b）将光敏蚀刻溶液层施加到涂覆和干燥，（c）通过具有所需图案的光掩模用紫外线照射基板以分解感光溶液并蚀刻涂层，和（d）除去感光溶液，分解的材料和反应产物分解的材料和涂层用有机溶剂。感光蚀刻溶液由可以被光分解成蚀刻该涂层的材料的化合物或从蚀刻所述涂层的溶液中的光分解材料和其它材料之间的反应获得的化合物组成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式