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1. 发明授权

US4327899A Stave cooling device having unwelded double tube 失效
标题翻译：具有未焊接双管的梯形冷却装置
公开(公告)号：US4327899A
公开(公告)日：1982-05-04
申请号：US136755
申请日：1980-04-03
申请人： Gyoichi Suzuki , Teruo Shimotsuma , Masaaki Higuchi , Tsunenori Sugawara , Takeshi Yano
发明人： Gyoichi Suzuki , Teruo Shimotsuma , Masaaki Higuchi , Tsunenori Sugawara , Takeshi Yano
IPC分类号： C21B7/10 , F27B1/24 , F27D1/12 , F27D9/00
CPC分类号： F27D1/12 , C21B7/10 , F27D2009/0048
摘要： A stave cooling device includes a double drawn steel tube cast-mounted in a castable metal main body, and the double tube includes an inner tube which serves as a passage for a coolant. The inner tube of the double tube contains 0.20 to 0.38% of equivalent carbon and an outer tube of the double tube contains 0.15 to 0.25% of equivalent carbon. The outer tube has on its outer surface an alumina coating of 0.08 to 0.25 mm thick, and the main body is formed by casting a spheroidal graphite cast iron. The double tube is cast-mounted in the main body such that the double tube and the main body are not welded together.
摘要翻译：壁式冷却装置包括浇铸在铸造金属主体中的双拉伸钢管，双管包括用作冷却剂通道的内管。双管的内管含有0.20〜0.38％的当量碳，双管的外管含有0.15〜0.25％的当量碳。外管在其外表面上具有0.08至0.25mm厚的氧化铝涂层，并且主体通过铸造球墨铸铁形成。双管铸造安装在主体中，使得双管和主体不被焊接在一起。

2. 外观设计

USD310348S Engine generator 失效
公开(公告)号：USD310348S
公开(公告)日：1990-09-04
申请号：US110682
申请日：1987-10-20
申请人： Masaaki Higuchi , Masaru Atsuumi , Yasuo Otake , Yukinori Itoh
设计人： Masaaki Higuchi , Masaru Atsuumi , Yasuo Otake , Yukinori Itoh

3. 发明申请

US20100157680A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100157680A1
公开(公告)日：2010-06-24
申请号：US12638836
申请日：2009-12-15
申请人： Masaaki Higuchi , Hiroshi Matsuba , Yoshio Ozawa , Tetsuya Kai
发明人： Masaaki Higuchi , Hiroshi Matsuba , Yoshio Ozawa , Tetsuya Kai
IPC分类号： G11C16/04 , H01L29/792 , H01L21/28 , G11C11/34
CPC分类号： H01L21/28282
摘要： A semiconductor device includes a semiconductor region, a tunnel insulating film formed on the semiconductor region, a charge-storage insulating film formed on the tunnel insulating film, a block insulating film formed on the charge-storage insulating film, and a control gate electrode formed on the block insulating film, wherein the tunnel insulating film comprises a first region which is formed on a surface of the semiconductor region and contains silicon and oxygen, a second region which contains silicon and nitrogen, a third region which is formed on a back surface of the charge-storage insulating film and contains silicon and oxygen, and an insulating region which is formed at least between the first region and the second region or between the second region and the third region, and contains silicon and nitrogen and oxygen and the second region is formed between the first region and the third region.
摘要翻译：半导体器件包括半导体区域，形成在半导体区域上的隧道绝缘膜，形成在隧道绝缘膜上的电荷存储绝缘膜，形成在电荷存储绝缘膜上的块绝缘膜和形成的控制栅电极在所述块绝缘膜上，其中所述隧道绝缘膜包括形成在所述半导体区域的表面上并且包含硅和氧的第一区域，包含硅和氮的第二区域，形成在所述第二区域的背面的电荷存储绝缘膜并且包含硅和氧，以及至少形成在第一区域和第二区域之间或者在第二区域和第三区域之间形成的绝缘区域，并且包含硅和氮和氧，并且第二区域形成在第一区域和第三区域之间。

4. 发明授权

US4029053A Cooling box for metallurgical furnace 失效
标题翻译：冶金炉冷却箱
公开(公告)号：US4029053A
公开(公告)日：1977-06-14
申请号：US670004
申请日：1976-03-24
申请人： Masaaki Higuchi
发明人： Masaaki Higuchi
IPC分类号： C21B7/10 , F27D1/12 , F27D9/00 , F28D7/06 , F22B37/00
CPC分类号： C21B7/10 , F27D1/12 , F27D2009/0043
摘要： A cooling box for a metallurgical furnace comprising an independent and outermost first cooling water channel turning back in the front end part of the cooling box to form itself into a loop, a second cooling water channel turning back to form itself into a loop along the inner side of said first cooling water channel and a third cooling water channel turning back along the inner side of the second cooling water channel and communicating with the second cooling water channel at one end thereof.
摘要翻译：一种用于冶金炉的冷却箱，包括独立且最外面的第一冷却水通道，该第一冷却水通道在冷却箱的前端部分回转以形成环路，第二冷却水通道转回以沿着内部所述第一冷却水通道的侧面和沿着所述第二冷却水通道的内侧回转的第三冷却水通道，并且在所述第二冷却水通道的一端与所述第二冷却水通道连通。

5. 发明授权

US07873750B2 Server system having I/O interface unit 失效
标题翻译：具有I / O接口单元的服务器系统
公开(公告)号：US07873750B2
公开(公告)日：2011-01-18
申请号：US10853335
申请日：2004-05-26
申请人： Keizo Yabuta , Hidekazu Itsuki , Kazutoshi Abe , Masaaki Higuchi
发明人： Keizo Yabuta , Hidekazu Itsuki , Kazutoshi Abe , Masaaki Higuchi
IPC分类号： G06F15/16
CPC分类号： G06F13/409 , G06F13/4027
摘要： A disclosed server system has a processor blade in which a processor is mounted and an interface unit that is connected to an external device, and a serial interface connects between these units. Multiple serial interfaces are bundled to enable expansion of a band. The processor blade and the interface unit connect fellow connectors back to back.
摘要翻译：所公开的服务器系统具有其中安装有处理器的处理器刀片和连接到外部设备的接口单元，并且串行接口在这些单元之间连接。绑定多个串行接口以实现频段的扩展。处理器刀片和接口单元背对背连接其他连接器。

6. 发明申请

US20050126529A1 Engine generator 失效
标题翻译：发动机发电机
公开(公告)号：US20050126529A1
公开(公告)日：2005-06-16
申请号：US10778889
申请日：2004-02-12
申请人： Masaaki Higuchi
发明人： Masaaki Higuchi
IPC分类号： F02B63/04 , F02B75/16 , H02K7/18 , F02P1/02
CPC分类号： F02B75/16 , F02B63/04 , F02B63/048 , F02B2063/046
摘要： A positioning pin is knocked onto a crankshaft of an engine and a key way is formed in a boss of a first flywheel. When an outer rotor type generator is connected with the engine, the boss of the first flywheel is fitted over the crankshaft so as to adjust the positioning pin to the key way. When an inner rotor type generator is connected with the engine, a rotor shaft on which a rotor of a generator is mounted is fitted to a second flywheel so as to adjust the positioning pin to a key way formed in the second flywheel. The ignition angle of the engine is determined by fitting the positioning pin to the key way.
摘要翻译：定位销被撞击到发动机的曲轴上，并且在第一飞轮的凸台中形成关键方式。当外转子型发电机与发动机连接时，第一飞轮的凸台装配在曲轴上，以便将定位销调整为关键方式。当将内转子式发电机与发动机连接时，将安装有发电机的转子的转子轴装配到第二飞轮上，以将定位销调整成形成在第二飞轮中的键。发动机的点火角通过将定位销配合到钥匙方式来确定。

7. 发明申请

US20050015531A1 Server system 失效
标题翻译：服务器系统
公开(公告)号：US20050015531A1
公开(公告)日：2005-01-20
申请号：US10853335
申请日：2004-05-26
申请人： Keizo Yabuta , Hidekazu Itsuki , Kazutoshi Abe , Masaaki Higuchi
发明人： Keizo Yabuta , Hidekazu Itsuki , Kazutoshi Abe , Masaaki Higuchi
IPC分类号： G06F1/16 , G06F1/18 , G06F13/00 , G06F13/40 , G06F15/16
CPC分类号： G06F13/409 , G06F13/4027
摘要： A disclosed server system has a processor blade in which a processor is mounted and an interface unit that is connected to an external device, and a serial interface connects between these units. Multiple serial interfaces are bundled to enable expansion of a band. The processor blade and the interface unit connect fellow connectors back to back.
摘要翻译：所公开的服务器系统具有其中安装有处理器的处理器刀片和连接到外部设备的接口单元，并且串行接口在这些单元之间连接。绑定多个串行接口以实现频段的扩展。处理器刀片和接口单元背对背连接其他连接器。

8. 发明授权

US06792897B2 Soundproofed engine generator 有权
标题翻译：隔音发动机发电机
公开(公告)号：US06792897B2
公开(公告)日：2004-09-21
申请号：US10266469
申请日：2002-10-08
申请人： Masaaki Higuchi , Shinichi Okazaki
发明人： Masaaki Higuchi , Shinichi Okazaki
IPC分类号： F02B6300
CPC分类号： F02B63/04 , F02B63/048 , F02B75/16 , F02B77/13 , F02B2063/046
摘要： In each of the soundproofed engine generators, the position at which the power generator body is coupled to the crank shaft is located at the end part on the crank shaft. In the soundproofed engine generator of the inverter type, the inverter unit is opposed to the power generator body at a position just upstream of the power generator body. Accordingly, when the inverter unit and the power generator body are removed, a continuous, long and large space for receiving the power generator body can be secured within the soundproof cover.
摘要翻译：在每个隔音发动机发电机中，发电机主体联接到曲轴的位置位于曲轴的端部。在变频器类型的隔音发动机发电机中，逆变器单元在发电机体正上方的位置与发电机体相对。因此，当逆变器单元和发电机主体被去除时，可以在隔音盖内确保用于接收发电机主体的连续的，长而大的空间。

9. 发明授权

US08759901B2 Nonvolatile semiconductor memory device including a charge storage layer and semiconductor region in a groove 有权
标题翻译：非易失性半导体存储器件，其包括电荷存储层和凹槽中的半导体区域
公开(公告)号：US08759901B2
公开(公告)日：2014-06-24
申请号：US12855212
申请日：2010-08-12
申请人： Masaaki Higuchi , Yoshio Ozawa , Katsuyuki Sekine , Ryota Fujitsuka
发明人： Masaaki Higuchi , Yoshio Ozawa , Katsuyuki Sekine , Ryota Fujitsuka
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/66833
摘要： According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer.
摘要翻译：根据一个实施例，一种非易失性半导体存储器件，包括具有主表面的半导体层，形成在半导体层的主表面上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在第一绝缘层上的第二绝缘层电荷存储层和形成在第二绝缘层上的控制栅电极。至少一个通过散射减少电子能量的非弹性散射膜被包含在电荷存储层和第二绝缘层中的至少一个中。

10. 发明授权

US08754459B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08754459B2
公开(公告)日：2014-06-17
申请号：US13728311
申请日：2012-12-27
申请人： Masaaki Higuchi , Masaru Kito
发明人： Masaaki Higuchi , Masaru Kito
IPC分类号： H01L27/108 , H01L27/105 , H01L27/11 , H01L27/115 , H01L21/8229 , H01L21/8239 , H01L27/112 , H01L29/68
CPC分类号： H01L27/105 , H01L21/8229 , H01L21/8239 , H01L27/11 , H01L27/112 , H01L27/115 , H01L27/11582 , H01L29/685 , H01L29/792
摘要： According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a plurality of insulative separating films, a channel body, and a memory film. The stacked body includes a plurality of electrode layers and a plurality of insulating layers. The plurality of insulative separating films separates the stacked body into a plurality. The channel body extends in the stacking direction between the plurality of insulative separating films. A width of the electrode layer of a lower layer side between the insulative separating film and the memory film is greater than a width of the electrode layer of an upper layer side between the insulative separating film and the memory film. An electrical resistivity of the electrode layer is higher for the electrode layer of the lower layer side having the greater width than for the electrode layer of the upper layer side having the lesser width.
摘要翻译：根据一个实施例，半导体存储器件包括衬底，层叠体，多个绝缘分离膜，通道体和存储膜。层叠体包括多个电极层和多个绝缘层。多个绝缘分离膜将堆叠体分离成多个。通道体在层叠方向上在多个绝缘分离膜之间延伸。绝缘分离膜和记忆膜之间的下层侧的电极层的宽度大于绝缘分离膜和记忆膜之间的上层侧的电极层的宽度。对于具有比具有较小宽度的上层侧的电极层的宽度大的下层侧的电极层，电极层的电阻率较高。

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