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1. 发明授权

US06254676B1 Method for manufacturing metal oxide semiconductor transistor having raised source/drain 有权
标题翻译：制造具有升高的源极/漏极的金属氧化物半导体晶体管的方法
公开(公告)号：US06254676B1
公开(公告)日：2001-07-03
申请号：US09340969
申请日：1999-06-28
申请人： Gwo-Shii Yang , Michael W C Huang , Chien Chao Huang , Hsien-Ta Chung , Tri-Rung Yew
发明人： Gwo-Shii Yang , Michael W C Huang , Chien Chao Huang , Hsien-Ta Chung , Tri-Rung Yew
IPC分类号： C30B2514
CPC分类号： H01L29/6659 , H01L21/02532 , H01L21/02639 , H01L21/28035 , H01L29/41775 , H01L29/41783 , H01L29/6656 , H01L29/66628 , Y10S438/981
摘要： A method for manufacturing a metal oxide semiconductor transistor having a raised source/drain is described. A first spacer is formed on a sidewall of a gate electrode. An epitaxial layer is then formed on the exposed surface of the substrate and a top surface of the gate electrode. A light implantation step is then performed on the substrate while using the gate electrode and the first spacer as a first mask. Thereafter, a second spacer is formed on the sidewall of the gate electrode. A heavy implantation step is then performed on the substrate while using the gate electrode, the first spacer and the second spacer as a second mask. The epitaxial layer is then formed before the forming of the extension structure of the source/drain. Therefore, dopants in a source/drain extension structure avoid suffering the high temperature needed to form the epitaxial layer so that the redistribution of the dopants is prevented.
摘要翻译：描述了具有升高的源极/漏极的金属氧化物半导体晶体管的制造方法。在栅电极的侧壁上形成第一间隔物。然后在衬底的暴露表面和栅电极的顶表面上形成外延层。然后在使用栅电极和第一间隔件作为第一掩模的同时在衬底上执行光注入步骤。此后，在栅电极的侧壁上形成第二间隔物。然后在使用栅电极，第一间隔物和第二间隔物作为第二掩模的同时在衬底上执行沉重的注入步骤。然后在形成源极/漏极的延伸结构之前形成外延层。因此，源/漏扩展结构中的掺杂剂避免了形成外延层所需的高温，从而防止掺杂剂的再分布。

2. 发明授权

US5932489A Method for manufacturing phase-shifting mask 失效
标题翻译：相移掩模制造方法
公开(公告)号：US5932489A
公开(公告)日：1999-08-03
申请号：US847723
申请日：1997-04-22
申请人： Chien Chao Huang
发明人： Chien Chao Huang
IPC分类号： G03F1/29 , G03F9/00 , G03F7/12
CPC分类号： G03F1/29 , Y10S148/106 , Y10S438/942 , Y10S438/948
摘要： A method for manufacturing phase-shifting masks utilizing a photolithographic process and sidewall spacers to fabricate a phase-shifting layer. The method provides precise control over the shape and size of the resulting phase-shifting layer, and thus, simplifies photomask production.
摘要翻译：一种利用光刻工艺和侧壁间隔件来制造移相掩模以制造相移层的方法。该方法提供对所得到的相移层的形状和尺寸的精确控制，从而简化光掩模生产。

3. 发明授权

US08311666B2 System and method for separating defective dies from wafer 有权
标题翻译：用于从晶片分离有缺陷的模具的系统和方法
公开(公告)号：US08311666B2
公开(公告)日：2012-11-13
申请号：US12648234
申请日：2009-12-28
申请人： Te Chun Chen , Chien Chao Huang , Cheng Tao Tsai
发明人： Te Chun Chen , Chien Chao Huang , Cheng Tao Tsai
IPC分类号： G01R31/00 , G01R31/20 , G06F19/00
CPC分类号： H01L21/67144 , H01L21/67271
摘要： A system separating defective dies from a wafer comprises a film frame platform and a pick-and-place device. The film frame platform comprises a support table assembly configured for supporting a film frame assembly and a platform surface configured to receive the placement of bins thereupon. The pick-and-place device is configured for moving in a linear manner between the support table assembly and the platform surface.
摘要翻译：将有缺陷的模具与晶片分离的系统包括胶片框架平台和拾取和放置装置。胶片框架平台包括配置用于支撑胶片框架组件的支撑台组件和被配置成接收其上的盒的放置的平台表面。拾取和放置装置被配置为在支撑台组件和平台表面之间以线性方式移动。

4. 发明授权

US5853927A Method of aligning a mask in photolithographic process 失效
标题翻译：在光刻工艺中对准掩模的方法
公开(公告)号：US5853927A
公开(公告)日：1998-12-29
申请号：US842352
申请日：1997-04-24
申请人： Chien Chao Huang
发明人： Chien Chao Huang
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/707 , G03F1/42 , G03F9/7007
摘要： A method for aligning a mask in a photolithographic process is provided. This method allows the technician to easily see by the naked eye or by use of a microscope any misalignment of the mask, such that the misalignment can be easily corrected. The method includes providing the mask with an opaque frame having four corners, forming a plurality of alignment patterns on a platform where the mask is to be placed, and performing an alignment of the mask by visually checking for misalignment of the mask with reference to the alignment patterns on the platform. The alignment patterns may include a plurality of parallel-spaced bars both in the crosswise and lengthwise directions, to allow the technician to visually check for any misalignment of the mask and thereby shift the mask pellicle to the aligned position.
摘要翻译：提供了一种用于在光刻工艺中对准掩模的方法。该方法允许技术人员通过肉眼或使用显微镜容易地观察到掩模的不对准，使得可以容易地校正不对准。该方法包括向掩模提供具有四个角的不透明框架，在要放置掩模的平台上形成多个对准图案，并且通过目视检查掩模的未对准来参照掩模的对准来执行掩模的对准平台上的对齐模式。对准图案可以在横向和纵向方向上包括多个平行隔开的杆，以允许技术人员目视地检查掩模的任何未对准，从而将掩模防护薄膜移动到对准位置。

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