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1. 发明授权

US08683611B2 High resolution AFM tips containing an aluminum-doped semiconductor nanowire 有权
标题翻译：包含铝掺杂半导体纳米线的高分辨率AFM尖端
公开(公告)号：US08683611B2
公开(公告)日：2014-03-25
申请号：US13608372
申请日：2012-09-10
申请人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
IPC分类号： G01Q60/38 , G01Q60/40 , B82Y15/00
CPC分类号： G01Q70/12 , G01Q60/38
摘要： A high resolution AFM tip is provided which includes an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of the semiconductor cantilever, the semiconductor pyramid having an apex. The AFM tip also includes a single Al-doped semiconductor nanowire on the exposed apex of the semiconductor pyramid, wherein the single Al-doped semiconductor nanowire is epitaxial with respect to the apex of the semiconductor pyramid.
摘要翻译：提供了一种高分辨率AFM尖端，其包括AFM探针，其包括具有从半导体悬臂的表面向上延伸的半导体金字塔的半导体悬臂，所述半导体金字塔具有顶点。 AFM尖端还包括在半导体金字塔的暴露的顶点上的单个Al掺杂的半导体纳米线，其中单个Al掺杂的半导体纳米线相对于半导体金字塔的顶点是外延的。

2. 发明授权

US08474061B2 Production scale fabrication method for high resolution AFM tips 失效
标题翻译：高分辨率AFM提示的生产规模制作方法
公开(公告)号：US08474061B2
公开(公告)日：2013-06-25
申请号：US13608396
申请日：2012-09-10
申请人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
IPC分类号： G01Q60/38 , B82Y40/00
CPC分类号： G01Q70/12 , G01Q60/38
摘要： A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.
摘要翻译：提供了一种制造高分辨率原子力显微镜（AFM）尖端的方法，其包括在每个AFM尖端的半导体金字塔的顶点处生长的单个半导体纳米线。生长的半导体纳米线具有可控直径和高纵横比，而没有从半导体纳米线的尖端到其基底的显着锥形化。该方法包括提供包括半导体悬臂的AFM探针，该半导体悬臂具有从所述半导体悬臂的表面向上延伸的半导体金字塔。半导体金字塔有顶点。在AFM探针上形成图案化的氧化物层。图案化氧化物层具有暴露半导体金字塔的顶点的开口。使用未氧化的Al种子材料作为纳米线生长的催化剂，在半导体金字塔的暴露的顶点上生长单个半导体纳米线。

3. 发明授权

US08321961B2 Production scale fabrication method for high resolution AFM tips 失效
标题翻译：高分辨率AFM提示的生产规模制作方法
公开(公告)号：US08321961B2
公开(公告)日：2012-11-27
申请号：US12900123
申请日：2010-10-07
申请人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
IPC分类号： G01Q60/38 , B82Y99/00 , B82Y40/00
CPC分类号： G01Q70/12 , G01Q60/38
摘要： A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.
摘要翻译：提供了一种制造高分辨率原子力显微镜（AFM）尖端的方法，其包括在每个AFM尖端的半导体金字塔的顶点处生长的单个半导体纳米线。生长的半导体纳米线具有可控直径和高纵横比，而没有从半导体纳米线的尖端到其基底的显着锥形化。该方法包括提供包括半导体悬臂的AFM探针，该半导体悬臂具有从所述半导体悬臂的表面向上延伸的半导体金字塔。半导体金字塔有顶点。在AFM探针上形成图案化的氧化物层。图案化氧化物层具有暴露半导体金字塔的顶点的开口。使用未氧化的Al种子材料作为纳米线生长的催化剂，在半导体金字塔的暴露的顶点上生长单个半导体纳米线。

4. 发明申请

US20120331593A1 PRODUCTION SCALE FABRICATION METHOD FOR HIGH RESOLUTION AFM TIPS 失效
公开(公告)号：US20120331593A1
公开(公告)日：2012-12-27
申请号：US13608396
申请日：2012-09-10
申请人： Guy M. Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy M. Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
IPC分类号： G01Q60/38 , B82Y40/00
CPC分类号： G01Q70/12 , G01Q60/38
摘要： A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.

5. 发明申请

US20120090057A1 PRODUCTION SCALE FABRICATION METHOD FOR HIGH RESOLUTION AFM TIPS 失效
标题翻译：高分辨率AFM提示的生产规模制作方法
公开(公告)号：US20120090057A1
公开(公告)日：2012-04-12
申请号：US12900123
申请日：2010-10-07
申请人： Guy M. Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy M. Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
IPC分类号： G01Q60/38 , B82Y99/00 , B82Y40/00
CPC分类号： G01Q70/12 , G01Q60/38
摘要： A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.
摘要翻译：提供了一种制造高分辨率原子力显微镜（AFM）尖端的方法，其包括在每个AFM尖端的半导体金字塔的顶点处生长的单个半导体纳米线。生长的半导体纳米线具有可控直径和高纵横比，而没有从半导体纳米线的尖端到其基底的显着锥形化。该方法包括提供包括半导体悬臂的AFM探针，该半导体悬臂具有从所述半导体悬臂的表面向上延伸的半导体金字塔。半导体金字塔有顶点。在AFM探针上形成图案化的氧化物层。图案化氧化物层具有暴露半导体金字塔的顶点的开口。使用未氧化的Al种子材料作为纳米线生长的催化剂，在半导体金字塔的暴露的顶点上生长单个半导体纳米线。

6. 发明申请

US20130019351A1 PRODUCTION SCALE FABRICATION METHOD FOR HIGH RESOLUTION AFM TIPS 有权
标题翻译：高分辨率AFM提示的生产规模制作方法
公开(公告)号：US20130019351A1
公开(公告)日：2013-01-17
申请号：US13608372
申请日：2012-09-10
申请人： Guy M. Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
发明人： Guy M. Cohen , Mark C. Reuter , Brent A. Wacaser , Maha M. Khayyat
IPC分类号： G01Q60/38 , G01Q60/40 , B82Y15/00
CPC分类号： G01Q70/12 , G01Q60/38
摘要： A high resolution AFM tip is provided which includes an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of the semiconductor cantilever, the semiconductor pyramid having an apex. The AFM tip also includes a single Al-doped semiconductor nanowire on the exposed apex of the semiconductor pyramid, wherein the single Al-doped semiconductor nanowire is epitaxial with respect to the apex of the semiconductor pyramid.
摘要翻译：提供了一种高分辨率AFM尖端，其包括AFM探针，其包括具有从半导体悬臂的表面向上延伸的半导体金字塔的半导体悬臂，所述半导体金字塔具有顶点。 AFM尖端还包括在半导体金字塔的暴露的顶点上的单个Al掺杂的半导体纳米线，其中单个Al掺杂的半导体纳米线相对于半导体金字塔的顶点是外延的。

7. 发明授权

US09018082B2 Nanoscale chemical templating with oxygen reactive materials 有权
标题翻译：纳米级化学模板与氧反应性材料
公开(公告)号：US09018082B2
公开(公告)日：2015-04-28
申请号：US13555252
申请日：2012-07-23
申请人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
发明人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
IPC分类号： H01L21/20 , H01L21/30 , H01L29/66 , H01L29/02
CPC分类号： H01L29/0676 , H01L21/20 , H01L21/30 , H01L29/02 , H01L29/20 , H01L29/66
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
摘要翻译：提供了一种在用于半导体器件应用的半导体衬底的表面上制造模板化半导体纳米线的方法。该方法包括通过使用氧反应种子材料来控制半导体纳米线的空间位置。本发明还提供包括半导体纳米线的半导体结构。在又一个实施例中，提供了在随后的退火步骤期间能够与氧反应元件形成化合物半导体合金的化合物半导体衬底或其它类似衬底的图案化。该实施例提供可用于各种应用的图案化衬底，包括例如半导体器件制造，光电器件制造和太阳能电池器件制造。

8. 发明授权

US09082687B2 Nanoscale chemical templating with oxygen reactive materials 有权
公开(公告)号：US09082687B2
公开(公告)日：2015-07-14
申请号：US13555242
申请日：2012-07-23
申请人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
发明人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
IPC分类号： H01L29/06 , H01L21/20 , H01L21/30 , H01L29/66 , H01L29/02
CPC分类号： H01L29/0676 , H01L21/20 , H01L21/30 , H01L29/02 , H01L29/20 , H01L29/66
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.

9. 发明授权

US08349715B2 Nanoscale chemical templating with oxygen reactive materials 有权
公开(公告)号：US08349715B2
公开(公告)日：2013-01-08
申请号：US12696417
申请日：2010-01-29
申请人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
发明人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
IPC分类号： H01L21/20
CPC分类号： H01L29/0676 , H01L21/20 , H01L21/30 , H01L29/02 , H01L29/20 , H01L29/66
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.

10. 发明申请

US20120289035A1 NANOSCALE CHEMICAL TEMPLATING WITH OXYGEN REACTIVE MATERIALS 有权
公开(公告)号：US20120289035A1
公开(公告)日：2012-11-15
申请号：US13555252
申请日：2012-07-23
申请人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
发明人： Maha M. Khayyat , Devendra K. Sadana , Brent A. Wacaser
IPC分类号： H01L21/20
CPC分类号： H01L29/0676 , H01L21/20 , H01L21/30 , H01L29/02 , H01L29/20 , H01L29/66
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.

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