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1. 发明申请

US20070102705A1 Thin film transistors and semiconductor constructions 失效
标题翻译：薄膜晶体管和半导体结构
公开(公告)号：US20070102705A1
公开(公告)日：2007-05-10
申请号：US11644863
申请日：2006-12-21
申请人： Gurtej Sandhu , Shubneesh Batra , Pierre Fazan
发明人： Gurtej Sandhu , Shubneesh Batra , Pierre Fazan
IPC分类号： H01L29/04 , H01L29/786
CPC分类号： H01L29/78678 , H01L27/1214 , H01L27/127 , H01L29/04 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78672 , H01L29/78675
摘要： A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a fluorine containing layer adjacent the polycrystalline thin film layer; c) annealing the fluorine containing layer at a temperature and for a time period which in combination are effective to drive fluorine from the fluorine containing layer into the polycrystalline thin film layer and incorporate fluorine within the grain boundaries to passivate said grain boundaries; and d) providing a transistor gate operatively adjacent the thin film transistor layer. The thin film transistor can be fabricated to be bottom gated or top gated. A buffering layer can be provided intermediate the thin film transistor layer and the fluorine containing layer, with the buffering layer being transmissive of fluorine from the fluorine containing layer during the annealing. Preferably, the annealing temperature is both sufficiently high to drive fluorine from the fluorine containing layer into the polycrystalline thin film layer and incorporate fluorine within the grain boundaries to passivate said grain boundaries, but sufficiently low to prevent chemical reaction of the fluorine containing layer with the polycrystalline thin film layer.
摘要翻译：相对于衬底形成薄膜晶体管的方法包括：a）在衬底上提供多晶材料的薄膜晶体管层，所述多晶材料包括晶界; b）在多晶薄膜层附近提供含氟层; c）在一段温度和一段时间内退火含氟层，所述时间段有效地将氟从含氟层驱动到多晶薄膜层中，并且在晶界内引入氟以钝化所述晶界; 以及d）提供与所述薄膜晶体管层可操作地相邻的晶体管栅极。薄膜晶体管可以被制造为底部门控或顶部门控。可以在薄膜晶体管层和含氟层之间设置缓冲层，缓冲层在退火期间从含氟层透过氟。优选地，退火温度足够高以将氟从含氟层驱动到多晶薄膜层中并且在晶界内引入氟以使所述晶界钝化，但是足够低以防止含氟层与多晶薄膜层。

2. 发明申请

US20060001019A1 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same 有权
公开(公告)号：US20060001019A1
公开(公告)日：2006-01-05
申请号：US11216415
申请日：2005-08-30
申请人： Gurtej Sandhu , Pierre Fazan
发明人： Gurtej Sandhu , Pierre Fazan
IPC分类号： H01L29/06 , H01L29/08
CPC分类号： H01L21/7687 , H01L21/76846 , H01L21/76849 , H01L21/76855 , H01L21/76895 , H01L27/10852 , H01L27/10855 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. An insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant.

3. 发明申请

US20050156240A1 Thin film transistors and semiconductor constructions 失效
标题翻译：薄膜晶体管和半导体结构
公开(公告)号：US20050156240A1
公开(公告)日：2005-07-21
申请号：US11021651
申请日：2004-12-22
申请人： Gurtej Sandhu , Shubneesh Batra , Pierre Fazan
发明人： Gurtej Sandhu , Shubneesh Batra , Pierre Fazan
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01L21/00 , H01L21/8242
CPC分类号： H01L29/78678 , H01L27/1214 , H01L27/127 , H01L29/04 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78672 , H01L29/78675
摘要： A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a fluorine containing layer adjacent the polycrystalline thin film layer; c) annealing the fluorine containing layer at a temperature and for a time period which in combination are effective to drive fluorine from the fluorine containing layer into the polycrystalline thin film layer and incorporate fluorine within the grain boundaries to passivate said grain boundaries; and d) providing a transistor gate operatively adjacent the thin film transistor layer. The thin film transistor can be fabricated to be bottom gated or top gated. A buffering layer can be provided intermediate the thin film transistor layer and the fluorine containing layer, with the buffering layer being transmissive of fluorine from the fluorine containing layer during the annealing. Preferably, the annealing temperature is both sufficiently high to drive fluorine from the fluorine containing layer into the polycrystalline thin film layer and incorporate fluorine within the grain boundaries to passivate said grain boundaries, but sufficiently low to prevent chemical reaction of the fluorine containing layer with the polycrystalline thin film layer.
摘要翻译：相对于衬底形成薄膜晶体管的方法包括：a）在衬底上提供多晶材料的薄膜晶体管层，所述多晶材料包括晶界; b）在多晶薄膜层附近提供含氟层; c）在一段温度和一段时间内退火含氟层，所述时间段有效地将氟从含氟层驱动到多晶薄膜层中，并且在晶界内引入氟以钝化所述晶界; 以及d）提供与所述薄膜晶体管层可操作地相邻的晶体管栅极。薄膜晶体管可以被制造为底部门控或顶部门控。可以在薄膜晶体管层和含氟层之间设置缓冲层，缓冲层在退火期间从含氟层透过氟。优选地，退火温度足够高以将氟从含氟层驱动到多晶薄膜层中并且在晶界内引入氟以使所述晶界钝化，但是足够低以防止含氟层与多晶薄膜层。

4. 发明授权

US5335138A High dielectric constant capacitor and method of manufacture 失效
标题翻译：高介电常数电容器及其制造方法
公开(公告)号：US5335138A
公开(公告)日：1994-08-02
申请号：US17385
申请日：1993-02-12
申请人： Gurtej Sandhu , Pierre Fazan
发明人： Gurtej Sandhu , Pierre Fazan
IPC分类号： H01L21/02 , H01L27/108 , H01G1/01 , H01L27/00
CPC分类号： H01L28/55 , H01L27/10808 , H01L28/60 , H01L28/75
摘要： A high storage capacity capacitor for a semiconductor structure includes a barrier layer formed on a polysilicon electrode, a lower electrode, a dielectric layer, and an upper electrode. The dielectric material is formed of a high dielectric constant material such as BaSrTiO.sub.3. In order to protect the barrier layer from oxidation during deposition of the dielectric layer and to provide a smooth surface geometry for depositing the dielectric layer, conducting or insulating spacers are formed on the sidewalls of the barrier layer and lower electrode. A smooth dielectric layer can thus be formed that is less susceptible to current leakage. In addition, the insulating spacers can be formed to completely fill a space between adjacent capacitors and to provide a completely planar surface.
摘要翻译：用于半导体结构的高存储容量电容器包括形成在多晶硅电极，下电极，电介质层和上电极上的阻挡层。介电材料由高介电常数材料如BaSrTiO3形成。为了在沉积介电层期间保护阻挡层不被氧化，并且为了沉积电介质层提供平滑的表面几何形状，在阻挡层和下电极的侧壁上形成导电或绝缘间隔物。因此可以形成较不易受电流泄漏影响的平滑介电层。此外，绝缘间隔物可以形成为完全填充相邻电容器之间的空间并提供完全平坦的表面。

5. 发明授权

US10515801B2 Pitch multiplication using self-assembling materials 有权
公开(公告)号：US10515801B2
公开(公告)日：2019-12-24
申请号：US12908206
申请日：2010-10-20
申请人： Gurtej Sandhu
发明人： Gurtej Sandhu
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/3213
摘要： Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.

6. 发明授权

US09196753B2 Select devices including a semiconductive stack having a semiconductive material 有权
标题翻译：选择包括具有半导体材料的半导体叠层的器件
公开(公告)号：US09196753B2
公开(公告)日：2015-11-24
申请号：US13089648
申请日：2011-04-19
申请人： D. V. Nirmal Ramaswamy , Gurtej Sandhu
发明人： D. V. Nirmal Ramaswamy , Gurtej Sandhu
IPC分类号： H01L27/108 , H01L29/872 , H01L27/28 , H01L45/00 , H01L27/102 , H01L29/885 , H01L27/22 , H01L27/24 , G11C11/56 , G11C13/00
CPC分类号： H01L29/872 , G11C11/5678 , G11C13/0004 , G11C2213/71 , H01L27/1021 , H01L27/224 , H01L27/2409 , H01L27/285 , H01L29/885 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/16
摘要： Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.
摘要翻译：为选择装置提供方法，装置和系统，所述选择装置可以包括形成在第一电极上的至少一个半导体材料的半导体叠层，其中半导体叠层可以具有约700埃（或更小）的厚度。所述至少一个半导体材料中的每一个可以具有约4电子伏（eV）或更小的相关带隙，并且可以在半导体叠层上形成第二电极。

7. 发明授权

US08946907B2 Self-aligned nano-structures 有权
标题翻译：自对准纳米结构
公开(公告)号：US08946907B2
公开(公告)日：2015-02-03
申请号：US13526225
申请日：2012-06-18
申请人： Gurtej Sandhu
发明人： Gurtej Sandhu
IPC分类号： H01L23/52 , H01L21/311 , H01L21/033
CPC分类号： H01L23/5226 , H01L21/0337 , H01L21/31144 , H01L2924/0002 , H01L2924/00
摘要： A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.
摘要翻译：提供了一种用于在半导体组件中产生结构的方法。该方法包括将孔蚀刻到电介质层中，并在该介电层上施加聚合物层。均匀地施加聚合物层，并根据孔的几何形状，或者存在或不存在生长促进材料，以不同的速率填充孔。该聚合物产生用于蚀刻间隔物之间的附加结构的间隔物。该方法能够实现比当前光刻技术更小的结构。

8. 发明授权

US08796661B2 Nonvolatile memory cells and methods of forming nonvolatile memory cell 有权
标题翻译：非易失性存储单元和形成非易失性存储单元的方法
公开(公告)号：US08796661B2
公开(公告)日：2014-08-05
申请号：US12917348
申请日：2010-11-01
申请人： Nirmal Ramaswamy , Gurtej Sandhu
发明人： Nirmal Ramaswamy , Gurtej Sandhu
IPC分类号： H01L47/00 , H01L21/06 , H01L21/20
CPC分类号： H01L45/085 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/1273 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1683
摘要： A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed.
摘要翻译：形成非易失性存储单元的方法包括形成具有第一电流导电材料的第一电极和从第一电流导电材料向外突出的周向自对准的第二导电材料。第二电流导电材料的组成不同于第一电流导电材料。可编程区域形成在第一电流导电材料之上并且在第一电极的突出的第二电流导电材料之上。在可编程区域上形成第二电极。在一个实施例中，可编程区域是离子传导材料，并且第一和第二电极中的至少一个电极具有直接抵靠离子导电材料的电化学活性表面。公开了其它方法和结构方面。

9. 发明授权

US08637113B2 Methods of forming a non-volatile resistive oxide memory array 有权
标题翻译：形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US08637113B2
公开(公告)日：2014-01-28
申请号：US13354163
申请日：2012-01-19
申请人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
发明人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
IPC分类号： C23C18/00 , C23C20/00 , C23C28/00 , C23C30/00 , H01C17/06
CPC分类号： H01L27/101 , H01L21/0271 , Y10S438/947
摘要： A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another.
摘要翻译：形成非易失性电阻氧化物存储器阵列的方法包括在衬底上形成多个导电字线或导电位线。含金属氧化物的材料形成在多条所述一条字线或位线中。在多个所述一条字线或位线之间提供一系列细长的沟槽。多个自组装嵌段共聚物线形成在沟槽中的各个内，与沟槽侧壁之间对准并且在沟槽侧壁之间形成。从所述多个自组装嵌段共聚物线路提供多个导电字线或导电位线，以形成包含所述金属氧化物的材料的单独可编程的结，其中字线和位线彼此交叉。

10. 发明申请

US20130188903A1 PHOTONIC DEVICE AND METHODS OF FORMATION 有权
标题翻译：光电器件及其形成方法
公开(公告)号：US20130188903A1
公开(公告)日：2013-07-25
申请号：US13354767
申请日：2012-01-20
申请人： Gurtej Sandhu , Roy Meade
发明人： Gurtej Sandhu , Roy Meade
IPC分类号： G02B6/12 , H01L21/02
CPC分类号： G02B6/12 , B82Y20/00 , G02B6/122 , G02B6/1223 , G02B6/1225 , G02B6/13 , G02B2006/121 , H01L2933/0083
摘要： A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.
摘要翻译：描述了提供在光子器件的衬底和内核之间提供减小的光学耦合的区域的光子器件和形成方法。该区域由内芯和外包层中的孔形成。孔可以填充提供光子晶体的材料。因此，光子器件可以用作波导和光子晶体。

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