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1. 发明授权

US5851843A Method of manufacturing a super conduction field effect transistor 失效
标题翻译：制造超导电场效应晶体管的方法
公开(公告)号：US5851843A
公开(公告)日：1998-12-22
申请号：US951503
申请日：1997-10-16
申请人： Jeong Dae Suh , Gun Yong Sung
发明人： Jeong Dae Suh , Gun Yong Sung
IPC分类号： C30B29/22 , H01L21/3205 , H01L39/00 , H01L39/14 , H01L39/22 , H01L39/24 , H01L21/00
CPC分类号： H01L39/146 , H01L21/32058
摘要： A method of manufacturing super conduction field effect transistor having a bi-crystal boundary junction is disclosed. According to the present invention, it is constituted such that on a SrTiO.sub.3 bi-crystal substrate, a bi-crystal super conductive thin films for source and drain electrode having a compound of YBa.sub.2 Cu.sub.3 O.sub.7-x, a non-super conductive oxide layer having a compound of PrBa.sub.2 Cu.sub.3 O.sub.7-x interposed between the bi-crystal super conductive thin films for source and drain electrode and the SrTiO.sub.3 bi-crystal substrate, a boundary channel interposed therebetween, a amorphous insulating layer for gate electrode having a compound of SrTiO.sub.3 deposited on a portion between the bi-crystal super conductive thin films for source and drain electrode above the boundary channel, metal pads for electrode, respectively, formed on the bi-crystal super conductive thin films for source and drain electrode and the amorphous insulating layer for gate electrode are sequentially formed.
摘要翻译：公开了一种制造具有双晶边界结的超导电场效应晶体管的方法。根据本发明，其结构使得在SrTiO3双晶基板上具有具有YBa2Cu3O7-x的化合物的源极和漏极的双晶超导电薄膜，具有化合物的非超导导电氧化物层 PrBa2Cu3O7-x介于用于源极和漏极的双晶超导电薄膜和SrTiO3双晶衬底之间，边界通道介于其间，用于栅电极的非晶绝缘层，其中沉积有SrTiO 3的化合物沉积在用于源极和漏极的双晶超级导电薄膜和用于栅电极的非晶绝缘层上分别形成的用于源极和漏电极的双晶超级导电薄膜，分别用于电极的金属焊盘，栅电极的非晶绝缘层形成。

2. 发明授权

US6004907A Method of fabricating a superconducting junction using cubic YBa.sub.2 Cu.sub.3 O .sub.x thin film as a barrier layer 失效
标题翻译：使用立方YBa2Cu3O x薄膜作为阻挡层制造超导结的方法
公开(公告)号：US6004907A
公开(公告)日：1999-12-21
申请号：US119394
申请日：1998-07-21
申请人： Jeong Dae Suh , Gun Yong Sung
发明人： Jeong Dae Suh , Gun Yong Sung
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702
摘要： The present invention forms a superconducting junction using a cubic YBa.sub.2 Cu.sub.3 Ox thin film as a barrier layer. The present invention forms a first YBCO superconducting thin film, a SrTiO.sub.3 insulating layer thin film on the substrate, etches a side of them in the form of inclination, subsequently integrates a non-superconducting cubic YBCO barrier thin film, a second YBCO superconducting thin film, a SrTiO.sub.3 protecting layer thin film in series on the whole surface of the substrate, etches an opposite side of the etched part of the SrTiO.sub.3 insulating layer thin film in the form of inclination, fabricates a superconducting junction by forming a metal electrode to said aperture after forming apertures which expose said first YBCO superconducting thin film, the second YBCO superconducting thin film, fabricates a superconducting junction upon forming the metallic electrode to the apertures, and deposits a cubic YBa.sub.2 Cu.sub.3 Ox barrier thin film at a temperature of 600-650.degree. C. and a depositing velocity of 6.5-12.2 nm/s.
摘要翻译：本发明使用立方YBa2Cu3Ox薄膜作为阻挡层形成超导结。本发明在衬底上形成第一YBCO超导薄膜，SrTiO3绝缘层薄膜，以斜面的形式蚀刻它们的一面，随后将非超导立方YBCO阻挡薄膜，第二YBCO超导薄膜，在基板的整个表面上串联的SrTiO3保护层薄膜，以倾斜的形式蚀刻SrTiO 3绝缘层薄膜的蚀刻部分的相对侧，通过在所述孔径上形成金属电极来制造超导结在形成暴露所述第一YBCO超导薄膜的孔之后，第二YBCO超导薄膜在向孔隙形成金属电极时制造超导结，并在600-650℃的温度下沉积立方YBa2Cu3Ox势垒薄膜。并且沉积速度为6.5-12.2nm / s。

3. 发明授权

US5820682A Laser deposition apparatus for depositing a large area oxide thin film on a substrate 失效
标题翻译：用于在基板上沉积大面积氧化物薄膜的激光沉积设备
公开(公告)号：US5820682A
公开(公告)日：1998-10-13
申请号：US965765
申请日：1997-11-07
申请人： Gun Yong Sung , Jeong Dae Suh
发明人： Gun Yong Sung , Jeong Dae Suh
IPC分类号： H01L21/316 , C23C14/28 , C23C14/00
CPC分类号： C23C14/28
摘要： A laser deposition apparatus for a large area oxide thin film which can enable thin films of a large area to be deposited by varying a target affixing method when performing a pulse laser deposition which most effectively deposits various oxide thin films of a complex chemical composition. The apparatus in accordance with the present invention comprises a tilted target affixed to a rotatable target plate by a target frame such that the target is tilted with respect to the target plate; a substrate heater on which the substrate can be mounted and which can be rotated on its own axis; and an eximer laser installed within a vacuum chamber for irradiating a laser beam to said tilted target.
摘要翻译：一种用于大面积氧化物薄膜的激光沉积设备，当进行最有效地沉积复杂化学成分的各种氧化物薄膜的脉冲激光沉积时，可以通过改变目标固定方法来沉积大面积的薄膜。根据本发明的装置包括通过目标框架固定到可旋转靶板的倾斜目标，使得目标物相对于目标板倾斜; 基板加热器，基板可以在其上安装并且可以在其自身轴线上旋转; 以及安置在真空室内的准分子激光器，用于将激光束照射到所述倾斜靶。

4. 发明授权

US07851791B2 Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same 有权
标题翻译：具有N型和P型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US07851791B2
公开(公告)日：2010-12-14
申请号：US12027929
申请日：2008-02-07
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L29/267
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用CIS（CuInSe2）的薄膜晶体管（TFT），其包括作为硫属元素材料的Se，并且可以提供二极管的电和光开关功能。根据本发明的TFT包括：基板，形成在基板的一部分上的栅电极，覆盖基板的绝缘层和栅极电极，形成在绝缘层上的多个CIS（CuInSe 2）膜，以便覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

5. 发明申请

US20080217610A1 THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有N型和P型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US20080217610A1
公开(公告)日：2008-09-11
申请号：US12027929
申请日：2008-02-07
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L29/267 , H01L21/06
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用包括作为硫属元素系材料的Se的CIS（CuInSe 2 N 2）的薄膜晶体管（TFT），并且可以提供整流功能，以及提供整流功能的电和光开关功能二极管。根据本发明的TFT包括：衬底，形成在衬底的一部分上的栅电极，覆盖衬底的绝缘层和栅电极，多个CIS（CuInSe 2/2）膜形成在绝缘层上以覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

6. 发明授权

US08084295B2 Thin film transistor having n-type and p-type CIS thin films and method of manufacturing the same 失效
标题翻译：具有n型和p型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US08084295B2
公开(公告)日：2011-12-27
申请号：US12938833
申请日：2010-11-03
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L21/06
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用CIS（CuInSe2）的薄膜晶体管（TFT），其包括作为硫属元素材料的Se，并且可以提供二极管的电和光开关功能。根据本发明的TFT包括：基板，形成在基板的一部分上的栅电极，覆盖基板的绝缘层和栅极电极，形成在绝缘层上的多个CIS（CuInSe 2）膜，以便覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

7. 发明授权

US07384567B2 Method of manufacturing thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US07384567B2
公开(公告)日：2008-06-10
申请号：US11015422
申请日：2004-12-20
申请人： Woo Seok Cheong , Yong Goo Yoo , Doo Hee Cho , Jae Kwang Lee , Ki Chul Kim , Jeong Dae Suh
发明人： Woo Seok Cheong , Yong Goo Yoo , Doo Hee Cho , Jae Kwang Lee , Ki Chul Kim , Jeong Dae Suh
IPC分类号： H01L21/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3929 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01F41/18 , H01F41/20 , H01F41/308
摘要： Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to insulate an upper electrode from a lower electrode in manufacturing a magnetic reproduction device, thereby simplifying and optimizing a manufacturing process and significantly reducing a manufacturing time.
摘要翻译：提供一种制造薄膜磁头的方法。特别地，提供一种制造薄膜磁头的方法，其中施加光致抗蚀剂的流动过程以分离硬磁性层和金属多层，并且使用光致抗蚀剂来使上电极与下电极绝缘在制造磁再现装置中，从而简化和优化制造工艺并显着减少制造时间。

8. 发明授权

US06280580B1 Method for manufacturing a double-sided high-temperature superconducting oxide thin film having large area 有权
标题翻译：一种面积大的双面高温超导氧化物薄膜的制造方法
公开(公告)号：US06280580B1
公开(公告)日：2001-08-28
申请号：US09436799
申请日：1999-11-08
申请人： Jeong Dae Suh , Seok Kil Han , Kwang Yong Kang
发明人： Jeong Dae Suh , Seok Kil Han , Kwang Yong Kang
IPC分类号： C23C1434
CPC分类号： H01L39/2435 , C23C14/087 , C23C14/3464 , C23C14/505 , C23C14/541 , C30B23/02 , C30B29/22 , C30B29/225
摘要： A method of manufacturing a double-sided high-temperature superconducting oxide thin film comprises the steps of placing two sintered material targets in a thin film deposition chamber; attaching a single crystal oxide substrate to a substrate supporter piercing through a separator of the thin film deposition chamber; rotating the single crystal oxide substrate, placing two substrate heaters toward both surfaces of the single crystal oxide substrate, and heating the single crystal oxide substrate thereby; applying a power to sputter to the sintered material targets; and depositing a target material on both surfaces of the single crystal oxide substrate by having plasma generated from the two sintered material targets contact thereon.
摘要翻译：制造双面高温超导氧化物薄膜的方法包括将两个烧结材料靶放置在薄膜沉积室中的步骤; 将单晶氧化物基板附着到穿过薄膜沉积室的隔板的基板支撑件上; 旋转单晶氧化物基板，将两个基板加热器朝向单晶氧化物基板的两个表面，由此加热单晶氧化物基板; 施加电力以溅射到烧结材料靶; 并且通过使两个烧结体靶产生的等离子体与其接触，在单晶氧化物基板的两面上沉积靶材。

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