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    • 7. 发明申请
    • DISPLAY DEVICE AND DRIVING METHOD THEREOF
    • 显示装置及其驱动方法
    • US20140071027A1
    • 2014-03-13
    • US13751263
    • 2013-01-28
    • Guang hai JINDong-Gyu KIMKwan-Wook JUNGHo-Young KIMJune-Woo LEEIn-Ho CHOI
    • Guang hai JINDong-Gyu KIMKwan-Wook JUNGHo-Young KIMJune-Woo LEEIn-Ho CHOI
    • G09G3/32
    • G09G3/3233G09G3/3291G09G2300/0852G09G2300/0861
    • A display device includes a plurality of pixels, each pixel including an organic light emitting diode (OLED) and a driving transistor, a sustain power supply unit applying a first sustain voltage to a plurality of data lines connected to the plurality of pixels, and a data driver applying one of a data signal and a second sustain voltage to the plurality of data lines. For each pixel, the sustain power supply unit applies the first sustain voltage as a first level voltage to reset a gate voltage of the driving transistor and applies the first sustain voltage as a second level voltage to increase the gate voltage of the driving transistor. When an anode voltage of the OLED in each pixel is discharged to be reset, the anode voltage of the OLED is controlled according to a voltage difference between the first level voltage and the second level voltage.
    • 显示装置包括多个像素,每个像素包括有机发光二极管(OLED)和驱动晶体管,维持电源单元对连接到多个像素的多个数据线施加第一维持电压,以及 数据驱动器将数据信号和第二维持电压中的一个施加到多条数据线。 对于每个像素,维持电源单元施加第一维持电压作为第一电平电压以复位驱动晶体管的栅极电压,并施加第一维持电压作为第二电平电压以增加驱动晶体管的栅极电压。 当每个像素中的OLED的阳极电压被放电以被复位时,OLED的阳极电压根据第一电平电压和第二电平电压之间的电压差来控制。
    • 10. 发明申请
    • THIN-FILM TRANSISTOR ARRAY SUBSTRATE FOR X-RAY DETECTOR AND X-RAY DETECTOR HAVING THE SAME
    • 用于X射线探测器的薄膜晶体管阵列和具有该X射线探测器的X射线探测器
    • US20080302969A1
    • 2008-12-11
    • US12136398
    • 2008-06-10
    • Kwan-Wook JUNGDae-Ho CHOO
    • Kwan-Wook JUNGDae-Ho CHOO
    • H01L31/08G01T1/24
    • H01L27/14663H01L27/12
    • In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.
    • 在用于X射线检测器的薄膜晶体管(“TFT”)阵列基板和具有TFT阵列基板的X射线检测器中,TFT阵列基板包括栅极布线,栅极绝缘层,有源层, 数据布线,光电二极管,有机绝缘层和偏置布线。 栅极布线形成在绝缘基板上,并且包括栅极线和栅电极。 栅极绝缘层覆盖栅极布线。 有源层形成在栅绝缘层上。 数据线形成在栅极绝缘层上,并包括数据线,源极和漏极。 光电二极管包括下电极和上电极以及光电导层。 有机绝缘层覆盖数据线和光电二极管。 偏置布线形成在有机绝缘层上。 因此,增加了孔径比和可靠性。