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1. 发明申请

US20090137043A1 METHODS FOR MODIFICATION OF POLYMERS, FIBERS AND TEXTILE MEDIA 审中-公开
标题翻译：聚合物，纤维和纺织品介质的改性方法
公开(公告)号：US20090137043A1
公开(公告)日：2009-05-28
申请号：US12277696
申请日：2008-11-25
申请人： Gregory N. Parsons , Gary Kevin Hyde , Joseph C. Spagnola , Qing Peng
发明人： Gregory N. Parsons , Gary Kevin Hyde , Joseph C. Spagnola , Qing Peng
IPC分类号： B32B5/02 , B05D7/04 , B32B27/30 , H01M8/00 , C12N5/06 , B01D15/00 , B32B1/00 , C23C16/00 , B01D53/00 , H01B1/12 , B01J31/06 , B32B27/04
CPC分类号： H01M8/00 , C23C16/01 , C23C16/34 , C23C16/403 , C23C16/405 , C23C16/45525 , C23C16/45555 , D06M10/04 , D06M10/06 , D06M10/08 , Y10T428/13 , Y10T428/249921 , Y10T442/20 , Y10T442/2484
摘要： The present subject matter relates to the modification of fibers by the growth of films by the Atomic Layer Epitaxy (ALE) process, which is also commonly referred to as Atomic Layer Deposition (ALD). The presently disclosed subject matter relates in particular to a process for the modification of the surface and bulk properties of fiber and textile media, including synthetic polymeric and natural fibers and yarns in woven, knit, and nonwoven form by low-temperature ALD.
摘要翻译：本主题涉及通过原子层外延（ALE）工艺生长膜的纤维的改性，其也被称为原子层沉积（ALD）。目前公开的主题具体涉及用于通过低温ALD改变纤维和纺织品介质的表面和整体性能的方法，包括合成聚合物和天然纤维以及织造，针织和非织造形式的纱线。

2. 发明申请

US20090023842A1 PORPHYRIN AND CONDUCTIVE POLYMER COMPOSITIONS FOR USE IN SOLID-STATE ELECTRONIC DEVICES 审中-公开
标题翻译：固体电子器件中使用的吡啶和导电聚合物组合物
公开(公告)号：US20090023842A1
公开(公告)日：2009-01-22
申请号：US12124972
申请日：2008-05-21
申请人： Darin W. Laird , Shawn P. Williams , Elena E. Sheina , Jonathan S. Lindsey , Gregory N. Parsons
发明人： Darin W. Laird , Shawn P. Williams , Elena E. Sheina , Jonathan S. Lindsey , Gregory N. Parsons
IPC分类号： C08K5/3417 , C08G75/00 , C08L81/00 , H01L31/00 , C08K3/04
CPC分类号： C08L65/00 , C08G2261/312 , C08K5/0091 , C08L65/02 , C09B47/00 , C09B69/108 , C09B69/109 , H01L51/0036 , H01L51/0068 , H01L51/0076 , H01L51/0077 , H01L51/4253 , Y02E10/549
摘要： Compositions comprising porphyrinic macrocycles and conjugated polymers such as polythiophene for use in organic electronic devices including solar cells are presented. Covalent linkage of a porphyrinic macrocycle to a polymer allows tuning of electronic and spectroscopic properties of conjugated polymers and can improve the heat stability of the system relative to a blended comparison. A composition comprising: at least one polymer comprising at least one porphyrinic macrocycle covalently linked to at least one conjugated polymer, wherein the porphyrinic macrocycle is metal-free is also presented. Inks can be formulated. Methods of making are provided.
摘要翻译：提出了包含卟啉大环化合物和共轭聚合物如用于包括太阳能电池的有机电子器件的聚噻吩的组合物。卟啉大环与聚合物的共价键可以调节共轭聚合物的电子和光谱性能，并可以提高系统相对于混合比较的热稳定性。一种组合物，其包含：至少一种包含至少一种与至少一种共轭聚合物共价连接的卟啉大环的聚合物，其中所述卟啉大环是不含金属的。油墨可以配制。提供制作方法。

3. 发明授权

US5242530A Pulsed gas plasma-enhanced chemical vapor deposition of silicon 失效
标题翻译：脉冲气体等离子体增强化学气相沉积硅
公开(公告)号：US5242530A
公开(公告)日：1993-09-07
申请号：US740759
申请日：1991-08-05
申请人： John Batey , John J. Boland , Gregory N. Parsons
发明人： John Batey , John J. Boland , Gregory N. Parsons
IPC分类号： C23C16/24 , C23C16/04 , C23C16/44 , C23C16/455 , C23C16/50 , C23C16/515 , C23C16/52 , C30B25/16 , C30B29/06 , H01L21/20 , H01L21/205
CPC分类号： C23C16/45523 , C23C16/04 , C23C16/52 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A substrate having silicon receptive surface areas is maintained in a plasma enhanced chemical vapor deposition (PECVD) chamber at a temperature, and under sufficient gas flow, pressure and applied energy conditions to form a gas plasma. The gas plasma is typically made up of hydrogen, but may be made up of mixtures of hydrogen with other gasses. A discontinuous flow of silane gas of predetermined duration and predetermined time spacing is introduced to produce at least one timed pulse of silane gas containing plasma, whereby a thin layer of silicon is deposited on the receptive areas of the substrate. The thin layer of silicon is exposed to the hydrogen gas plasma between the brief deposition time cycles and may result in the modification of the silicon layer by the hydrogen plasma. The surface modification may include at least one of etching, surface hydrogenation, surface bond reconstruction, bond strain relaxation, and crystallization, and serves the purpose of improving the silicon film for use in, for example, electronic devices. Repeated time pulses of silane gas and subsequent hydrogen plasma exposure cycles can result in selective deposition of silicon on predetermined receptive areas of a patterned substrate. Selective deposition of silicon can serve the purpose of simplifying electronic device manufacturing, such as, for example, the fabrication of amorphous silicon thin film transistors with low contact resistance in a single PECVD pump-down procedure.
摘要翻译：具有硅接受表面积的衬底在等离子体增强化学气相沉积（PECVD）室中保持在温度和足够的气体流量，压力和施加的能量条件下以形成气体等离子体。气体等离子体通常由氢组成，但也可由氢与其它气体的混合物组成。引入具有预定持续时间和预定时间间隔的不连续的硅烷气流，以产生至少一个含有等离子体的硅烷气体的定时脉冲，由此在衬底的接收区域上沉积薄层硅。硅薄层在短暂的沉积时间周期之间暴露于氢气等离子体，可能导致氢等离子体对硅层的修饰。表面改性可以包括蚀刻，表面氢化，表面键重建，键合应变松弛和结晶中的至少一种，并且用于改进用于例如电子器件的硅膜的目的。硅烷气体的重复时间脉冲和随后的氢等离子体暴露周期可导致硅在图案化衬底的预定接收区域上的选择性沉积。硅的选择性沉积可以用于简化电子器件制造的目的，例如在单个PECVD抽真空方法中制造具有低接触电阻的非晶硅薄膜晶体管。

4. 发明授权

US06787861B2 Non-crystalline oxides for use in microelectronic, optical, and other applications 失效
标题翻译：用于微电子，光学和其他应用的非结晶氧化物
公开(公告)号：US06787861B2
公开(公告)日：2004-09-07
申请号：US09891552
申请日：2001-06-25
申请人： Gerald Lucovsky , Gregory N. Parsons
发明人： Gerald Lucovsky , Gregory N. Parsons
IPC分类号： H01L2994
CPC分类号： H01L29/513 , C23C16/40 , H01L21/31604 , H01L21/31691 , H01L29/517 , H01L29/518
摘要： The invention relates to non-crystalline oxides of formulas (I) and (II), and methods of forming the same, along with field effect transistors, articles of manufacture, and microelectronic devices comprising the non-crystalline oxides.
摘要翻译：本发明涉及式（I）和（II）的非结晶氧化物及其形成方法，以及场效应晶体管，制品和包含非晶氧化物的微电子器件。

5. 发明授权

US06521911B2 High dielectric constant metal silicates formed by controlled metal-surface reactions 失效
公开(公告)号：US06521911B2
公开(公告)日：2003-02-18
申请号：US09908766
申请日：2001-07-19
申请人： Gregory N. Parsons , James J. Chambers , M. Jason Kelly
发明人： Gregory N. Parsons , James J. Chambers , M. Jason Kelly
IPC分类号： H01L2904
CPC分类号： C23C14/5806 , B82Y10/00 , C23C8/80 , C23C14/022 , C23C14/024 , C23C14/185 , C23C14/5853 , C23C14/586 , C23C26/00 , H01L21/28518 , H01L21/31604 , H01L21/31662 , H01L21/31683 , H01L21/3185 , H01L21/32105
摘要： A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound and oxygen to form an insulation layer on the surface of the semiconductor substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon bonds.

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