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    • 2. 发明授权
    • Interdigitated photovoltaic power conversion device
    • 交叉式光伏电力转换装置
    • US5897715A
    • 1999-04-27
    • US858422
    • 1997-05-19
    • James Scott WardMark Woodbury WanlassTimothy Arthur Gessert
    • James Scott WardMark Woodbury WanlassTimothy Arthur Gessert
    • H01L27/142H01L31/052H01L31/042
    • H01L31/056H01L31/0475Y02E10/52
    • A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.
    • 光伏电力转换装置具有适于接收冲击辐射的顶表面。 该装置包括至少两个相邻的串联连接的单元。 每个电池包括半绝缘衬底和布置在衬底上的第一掺杂导电体的横向导电层。 基层设置在横向导电层上并具有相同的电荷电导率。 具有相反电荷的第二掺杂导电性的发射极层设置在基极层上并在它们之间形成p-n结。 在发射极和基极层中形成多个间隔的通道,以在其底部暴露侧向电导率层。 前接触栅格位于每个单元的发射极层的顶表面上。 第一集电器沿着至少一个第一单元的一个外边缘定位。 背面接触网格位于设备顶表面的通道中,用于与横向传导层接合。 第二集电器沿着至少一个相对布置的第二单元的至少一个外边缘定位。 最后,提供了一种交叉机制,用于将一个单元的前接触栅格串联连接到设备顶表面处的相邻单元的后接触栅格。