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    • 1. 发明授权
    • Process for preparing finely-divided silicon dioxide in good yield
    • 以高产率制备细碎二氧化硅的方法
    • US4572827A
    • 1986-02-25
    • US594150
    • 1984-10-18
    • Gosta Flemmert
    • Gosta Flemmert
    • C01B33/16B01J12/00C01B7/19C01B33/18
    • C01B33/184B01J12/005C01B33/183C01B7/193C01P2006/12C01P2006/22C01P2006/80
    • Process and apparatus are provided for preparing finely-divided silicon dioxide in good yield by reaction of silicon fluoride in the vapor phase with water vapor, combustible gas and free oxygen-containing gas in a flame reaction zone to form hydrogen fluoride and silicon dioxide entrained in a gaseous reaction mixture; withdrawing the gaseous reaction mixture from the flame reaction zone; and then immediately and rapidly cooling the gaseous reaction mixture and entrained silicon dioxide to a temperature below 700.degree. C. by passing the gaseous reaction mixture in a turbulent flow at a Reynolds number above 300 under constraint through a straight narrow passage in alignment with the gas flow, the passage having a diameter within the range from about 20 to about 150 mm and smooth walls constituting a cooling surface.
    • 提供了工艺和装置,用于通过在气相中的氟化硅与水蒸气,可燃气体和游离含氧气体在火焰反应区中反应来以良好的收率制备细分二氧化硅,以形成氟化氢和二氧化碳 气态反应混合物; 从火焰反应区取出气态反应混合物; 然后立即并快速地将气态反应混合物和夹带的二氧化硅冷却至低于700℃的温度,通过使气态反应混合物在雷诺数高于300的湍流中在约束条件下通过与气体对准的直的窄通道 流动,通道具有在约20至约150mm的范围内的直径和构成冷却表面的平滑壁。