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1. 发明授权

US07939176B2 Coated substrates and method of coating 有权
标题翻译：涂布基材和涂布方法
公开(公告)号：US07939176B2
公开(公告)日：2011-05-10
申请号：US11821355
申请日：2007-06-22
申请人： Gordon Sisler , T. Brian McAneney , David Michael Thompson , Michael J. Diehl , Kurt I. Halfyard , Christine D. Anderson
发明人： Gordon Sisler , T. Brian McAneney , David Michael Thompson , Michael J. Diehl , Kurt I. Halfyard , Christine D. Anderson
IPC分类号： B32B27/00
CPC分类号： G03G8/00 , G03G7/0006 , G03G7/0046 , Y10T428/254 , Y10T428/31786 , Y10T428/31855
摘要： Disclosed herein is a xerographic print comprising a substrate with a toner-based image printed thereon, the printed substrate including low surface tension portions having a surface tension of no more than about 22 mN/m at 25 Deg. C. resulting in a surface tension gradient field on the substrate, the printed substrate being coated with a coating comprising at least one surfactant and a film-forming polymer, the coating having a liquid phase surface tension at 25 Deg. C. not exceeding the surface tension of the low surface tension portions of the printed substrate by more than about 2 mN/m, the coating having substantially no pinholes and being sufficiently resistant to permeation by the fuser oil to exhibit an effective absence of haze 24 hours after application. A system and a method of applying a substantially pinhole-free and haze-free coating substantially immediately after print fusing also are disclosed.
摘要翻译：本文公开了一种静电复印印刷品，其包含印刷有基于色粉的图像的基材，所述印刷基材包括在25度下具有不大于约22mN / m的表面张力的低表面张力部分。 C.在基底上形成表面张力梯度场，印刷基底涂覆有包含至少一种表面活性剂和成膜聚合物的涂层，该涂层具有25度的液相表面张力。 C.不超过印刷基板的低表面张力部分的表面张力大于约2mN / m，涂层基本上没有针孔并且足以抵抗定影油渗透以显示出雾度24的有效无效申请后几个小时。公开了一种在印刷物熔融之后基本上立即施加基本上无针孔和无雾涂层的系统和方法。

2. 发明授权

US07816550B2 Processes for the production of organometallic compounds 有权
标题翻译：用于生产有机金属化合物的方法
公开(公告)号：US07816550B2
公开(公告)日：2010-10-19
申请号：US11053836
申请日：2005-02-10
申请人： David Michael Thompson
发明人： David Michael Thompson
IPC分类号： C07F15/00
CPC分类号： C07F15/0046 , C23C16/18
摘要： This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及制备由式M（L）3表示的有机金属化合物的方法，其中M是VIII族金属，例如钌，L相同或不同，代表取代或未取代的脒基或取代的或未取代的脒基样基团，该方法包括（ⅰ）使取代或未取代的金属源化合物例如钌（II）化合物与取代或未取代的脒基或脒化物的化合物在溶剂存在下反应足以产生包含所述有机金属化合物（例如钌（III））化合物的反应混合物的条件，和（ii）从所述反应混合物中分离所述有机金属化合物。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

3. 发明授权

US5780636A Process for thiopyrans 失效
标题翻译：噻喃的方法
公开(公告)号：US5780636A
公开(公告)日：1998-07-14
申请号：US583363
申请日：1996-01-05
申请人： Philippe Pitchen , David Michael Thompson
发明人： Philippe Pitchen , David Michael Thompson
IPC分类号： A61K31/44 , A61K31/4433 , A61P9/12 , C07D213/50 , C07D409/04
CPC分类号： C07D409/04 , C07D213/50
摘要： The invention relates to a process for the preparation of intermediates useful in the preparation of (1R,2R)-2-(3-pyridyl)-N-alkyltetrahydro-2H-thiopyran-2-carbothioamide 1-oxides, which possess useful pharmaceutical properties, for example antihypertensive properties, and to intermediates and pharmaceutical products prepared using said process.
摘要翻译：本发明涉及制备可用于制备（1R，2R）-2-（3-吡啶基）-N-烷基四氢-2H-噻喃-2-硫代酰胺1-氧化物的中间体的方法，其具有有用的药物性质，例如抗高血压性质，以及使用所述方法制备的中间体和药物产品。

4. 发明授权

US07973188B2 Processes for the production of organometallic compounds 有权
标题翻译：用于生产有机金属化合物的方法
公开(公告)号：US07973188B2
公开(公告)日：2011-07-05
申请号：US12877297
申请日：2010-09-08
申请人： David Michael Thompson
发明人： David Michael Thompson
IPC分类号： C07F15/00 , C23C16/00
CPC分类号： C07F15/0046 , C23C16/18
摘要： This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及制备由式M（L）3表示的有机金属化合物的方法，其中M是VIII族金属，例如钌，L相同或不同，代表取代或未取代的脒基或取代的或未取代的脒基样基团，该方法包括（ⅰ）使取代或未取代的金属源化合物例如钌（II）化合物与取代或未取代的脒基或脒化物的化合物在溶剂存在下反应足以产生包含所述有机金属化合物（例如钌（III））化合物的反应混合物的条件，和（ii）从所述反应混合物中分离所述有机金属化合物。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

5. 发明申请

US20110008971A1 PROCESSES FOR THE PRODUCTION OF ORGANOMETALLIC COMPOUNDS 有权
标题翻译：生产有机化合物的方法
公开(公告)号：US20110008971A1
公开(公告)日：2011-01-13
申请号：US12877297
申请日：2010-09-08
申请人： David Michael Thompson
发明人： David Michael Thompson
IPC分类号： H01L21/312 , C07F15/00 , H01B1/12
CPC分类号： C07F15/0046 , C23C16/18
摘要： This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及制备由式M（L）3表示的有机金属化合物的方法，其中M是VIII族金属，例如钌，L相同或不同，代表取代或未取代的脒基或取代的或未取代的脒基样基团，该方法包括（ⅰ）使取代或未取代的金属源化合物例如钌（II）化合物与取代或未取代的脒基或脒化物的化合物在溶剂存在下反应足以产生包含所述有机金属化合物（例如钌（III））化合物的反应混合物的条件，和（ii）从所述反应混合物中分离所述有机金属化合物。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

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