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1. 发明授权

US08873808B2 Image processing apparatus, image processing method, and program 有权
标题翻译：图像处理装置，图像处理方法和程序
公开(公告)号：US08873808B2
公开(公告)日：2014-10-28
申请号：US13435746
申请日：2012-03-30
申请人： Goh Kobayashi , Yuji Ando
发明人： Goh Kobayashi , Yuji Ando
IPC分类号： G06T7/20 , G06T5/00 , H04N5/357 , H04N5/232 , H04N5/14 , H04N7/01 , H04N5/217 , H04N5/353
CPC分类号： H04N5/145 , H04N5/217 , H04N5/23206 , H04N5/2329 , H04N5/3532 , H04N7/0127 , H04N7/0137
摘要： There is provided an image processing apparatus that includes a move detecting unit that detects a move of a subject contained in a moving image from plural frame images, based on an image signal that indicates the moving image including the frame image and delay time information that indicates a delay time of an image pickup, and a correcting unit that corrects the image signal, based on the image signal and move information that indicates a move of a detected subject.
摘要翻译：提供一种图像处理装置，其包括移动检测单元，其基于指示包括帧图像的运动图像的图像信号和指示的帧延迟时间信息来检测来自多个帧图像的运动图像中包含的被摄体的移动图像拾取的延迟时间，以及校正单元，其基于图像信号校正图像信号，并移动指示被检测对象的移动的信息。

2. 发明申请

US20120257790A1 IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM 有权
标题翻译：图像处理设备，图像处理方法和程序
公开(公告)号：US20120257790A1
公开(公告)日：2012-10-11
申请号：US13435746
申请日：2012-03-30
申请人： Goh Kobayashi , Yuji Ando
发明人： Goh Kobayashi , Yuji Ando
IPC分类号： G06K9/62
CPC分类号： H04N5/145 , H04N5/217 , H04N5/23206 , H04N5/2329 , H04N5/3532 , H04N7/0127 , H04N7/0137
摘要： There is provided an image processing apparatus that includes a move detecting unit that detects a move of a subject contained in a moving image from plural frame images, based on an image signal that indicates the moving image including the frame image and delay time information that indicates a delay time of an image pickup, and a correcting unit that corrects the image signal, based on the image signal and move information that indicates a move of a detected subject.
摘要翻译：提供一种图像处理装置，其包括移动检测单元，其基于指示包括帧图像的运动图像的图像信号和指示的帧延迟时间信息来检测来自多个帧图像的运动图像中包含的被摄体的移动图像拾取的延迟时间，以及校正单元，其基于图像信号校正图像信号，并移动指示被检测对象的移动的信息。

3. 发明授权

US08716835B2 Bipolar transistor 有权
标题翻译：双极晶体管
公开(公告)号：US08716835B2
公开(公告)日：2014-05-06
申请号：US13124873
申请日：2009-10-16
申请人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
发明人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
IPC分类号： H01L29/66 , H01L29/737 , H01L29/20
CPC分类号： H01L29/7371 , H01L29/0649 , H01L29/0817 , H01L29/0821 , H01L29/2003 , H01L29/205 , H01L29/475 , H01L29/66318
摘要： A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0
摘要翻译：双极晶体管设置有发射极层，基极层和集电极层。发射极层形成在衬底之上，并且是包括第一氮化物半导体的n型导电层。基极层形成在发射极层上，是包含第二氮化物半导体的p型导体。集电极层形成在基极层上并且包括第三氮化物半导体。形成集电体层，基极层和发射极层，使得到基板表面的晶体生长方向平行于[000-1]的基板方向。第三氮化物半导体含有InycAlxcGa1-xc-ycN（0·xc·1,0,0·yc·1,0,0cc·yc·1）。第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

4. 发明授权

US08674407B2 Semiconductor device using a group III nitride-based semiconductor 有权
标题翻译：使用III族氮化物基半导体的半导体器件
公开(公告)号：US08674407B2
公开(公告)日：2014-03-18
申请号：US12919640
申请日：2009-03-12
申请人： Yuji Ando , Yasuhiro Okamoto , Kazuki Ota , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
发明人： Yuji Ando , Yasuhiro Okamoto , Kazuki Ota , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
IPC分类号： H01L29/66
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/518 , H01L29/7785
摘要： The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.
摘要翻译：本发明提供一种具有这样的结构的半导体器件，该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N（0 @ x @ 1）构成的下阻挡层，由InyGa1-yN（0 @ y @ 1）具有压应变和由Al z Ga 1-z N（0 @ z @ 1）组成的接触层，其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。因此，半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性，并且也适用于增强型。

5. 发明授权

US08525229B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08525229B2
公开(公告)日：2013-09-03
申请号：US12299542
申请日：2007-05-07
申请人： Yasuhiro Okamoto , Yuji Ando , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
发明人： Yasuhiro Okamoto , Yuji Ando , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
IPC分类号： H01L29/205 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316
摘要： A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (InyAl1-y)zGa1-zN (0≦y≦1, 0≦z≦1). The z for such cap layer monotonically decreases as being farther away from the electron-supplying layer.
摘要翻译：半导体器件包括沟道层，设置在沟道层上的电子供给层，设置在电子供给层上并与沟道层形成晶格匹配的盖层以及设置在盖层上的欧姆电极。盖层具有（In y Al 1-y）z Ga 1-z N（0 @ y @ 1，0 @ z @ 1）的组成。这种盖层的z随着远离电子供应层而单调减小。

6. 发明申请

US20110241075A1 BIPOLAR TRANSISTOR 有权
标题翻译：双极晶体管
公开(公告)号：US20110241075A1
公开(公告)日：2011-10-06
申请号：US13124872
申请日：2009-10-16
申请人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
发明人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
IPC分类号： H01L29/737
CPC分类号： H01L29/7371 , H01L29/045 , H01L29/2003
摘要： A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [0001] direction of the substrate. The first nitride semiconductor includes: InycAlxcGa1-xc-ycN (0≦xc≦1, 0≦yc≦1, 0
摘要翻译：双极晶体管包括：基板; 具有p导电型的集电极和基极层，具有n导电型的发射极层。集电极层形成在衬底上方并且包括第一氮化物半导体。具有p型导电型的基底层形成在集电极层上，并且包括第二耐磨半导体。具有n导电型的发射极层形成在基极层上并且包括第三氮化物半导体。形成集电体层，基极层和发射极层，使得相对于基板的表面的晶体生长方向与基板的[0001]方向平行。第一氮化物半导体包括：InycAlxcGa1-xc-ycN（0＆nlE; xc＆nlE; 1,0＆amp; nlE; yc＆nlE; 1,0

7. 发明授权

US07802564B2 Steam cooking apparatus 失效
标题翻译：蒸汽烹饪器具
公开(公告)号：US07802564B2
公开(公告)日：2010-09-28
申请号：US10583974
申请日：2004-12-08
申请人： Yuji Ando , Kazuyuki Matsubayashi , Shinya Ueda
发明人： Yuji Ando , Kazuyuki Matsubayashi , Shinya Ueda
IPC分类号： A21B1/08 , A21B1/22
CPC分类号： F24C15/327
摘要： In a ceiling part of a heating chamber, a sub-cavity is provided in which a steam-heating heater is housed. Steam generated by a steam generating device is heated by the steam-heating heater inside the sub-cavity to be brought into an overheated state, and is then jetted out through upper jet holes provided in the ceiling part of the heating chamber and through side jet holes provided in lower parts of the side walls of the heating chamber at both sides thereof. Food is supported on a rack to be in a state floating above the floor surface of the heating chamber, and, through the side jet holes, steam is jetted toward under the food.
摘要翻译：在加热室的天花板部分中，设置有容纳蒸汽加热加热器的子腔。由蒸汽发生装置产生的蒸汽由子腔内的蒸汽加热加热器加热，使其处于过热状态，然后通过设置在加热室的顶部的上部喷射孔并通过侧面喷射设置在加热室侧壁的两侧的孔。食物被支撑在架子上，处于浮在加热室的地板表面上方的状态，并且通过侧面喷射孔将蒸汽朝向食物下方喷射。

8. 发明授权

US07801214B2 Method and apparatus for controlling encoding rate and quantization scales 失效
标题翻译：用于控制编码率和量化尺度的方法和装置
公开(公告)号：US07801214B2
公开(公告)日：2010-09-21
申请号：US10989709
申请日：2004-11-16
申请人： Hideyuki Ichihashi , Yuji Ando
发明人： Hideyuki Ichihashi , Yuji Ando
IPC分类号： H04B1/66
CPC分类号： H04N19/198 , H04N19/124 , H04N19/14 , H04N19/142 , H04N19/15 , H04N19/152 , H04N19/164 , H04N19/172 , H04N19/176 , H04N19/196 , H04N19/37 , H04N19/61
摘要： A data processing apparatus able to generate encoded data able to give a high quality decoded image, wherein a Q-calculation circuit specifies a bit rate by which the encoded data is decoded at the time of decoding based on encoded data, then the Q-calculation circuit controls quantization scales of a quantization circuit based on the specified bit rate.
摘要翻译：一种数据处理装置，其能够生成能够提供高质量解码图像的编码数据，其中Q计算电路基于编码数据指定在解码时对编码数据进行解码的比特率，然后进行Q-计算电路基于指定的比特率控制量化电路的量化尺度。

9. 发明申请

US20080223352A1 Steam Cooking Apparatus 失效
标题翻译：蒸汽烹饪设备
公开(公告)号：US20080223352A1
公开(公告)日：2008-09-18
申请号：US10583974
申请日：2004-12-08
申请人： Yuji Ando , Kazuyuki Matsubayashi , Shinya Ueda
发明人： Yuji Ando , Kazuyuki Matsubayashi , Shinya Ueda
IPC分类号： F24C1/00
CPC分类号： F24C15/327
摘要： In a ceiling part of a heating chamber, a sub-cavity is provided in which a steam-heating heater is housed. Steam generated by a steam generating device is heated by the steam-heating heater inside the sub-cavity to be brought into an overheated state, and is then jetted out through upper jet holes provided in the ceiling part of the heating chamber and through side jet holes provided in lower parts of the side walls of the heating chamber at both sides thereof. Food is supported on a rack to be in a state floating above the floor surface of the heating chamber, and, through the side jet holes, steam is jetted toward under the food.
摘要翻译：在加热室的天花板部分中，设置有容纳蒸汽加热加热器的子腔。由蒸汽发生装置产生的蒸汽由子腔内的蒸汽加热加热器加热，使其处于过热状态，然后通过设置在加热室的顶部的上部喷射孔并通过侧面喷射设置在加热室侧壁的两侧的孔。食物被支撑在架子上，处于浮在加热室的地板表面上方的状态，并且通过侧面喷射孔将蒸汽朝向食物下方喷射。

10. 发明授权

US07256432B2 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US07256432B2
公开(公告)日：2007-08-14
申请号：US10541583
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
IPC分类号： H01L29/205 , H01L29/78
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/7787
摘要： An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed below the electric-field control electrode (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered with the SiN film (21).
摘要翻译：在栅电极（2）和漏电极（3）之间形成电场控制电极（5）。在电场控制电极（5）的下方形成包括SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被SiN膜（21）覆盖。

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