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1. 发明授权

US06254796B1 Selective etching of silicate 失效
标题翻译：选择性蚀刻硅酸盐
公开(公告)号：US06254796B1
公开(公告)日：2001-07-03
申请号：US09221596
申请日：1998-12-29
申请人： David L. Rath , Glenn W. Gale , Rangarajan Jagannathan , Kenneth J. McCullough , Karen P. Madden , Harald F. Okorn-Schmidt , Keith R. Pope
发明人： David L. Rath , Glenn W. Gale , Rangarajan Jagannathan , Kenneth J. McCullough , Karen P. Madden , Harald F. Okorn-Schmidt , Keith R. Pope
IPC分类号： H01L21302
CPC分类号： H01L21/31111 , C03C15/00 , C09K13/08
摘要： A silicate glass is selectively etched employing a composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include water.
摘要翻译：使用含有含氟化合物和某些有机溶剂的组合物选择性地蚀刻硅酸盐玻璃。优选的组合物还包括水。

2. 发明授权

US6117796A Removal of silicon oxide 失效
标题翻译：去除氧化硅
公开(公告)号：US6117796A
公开(公告)日：2000-09-12
申请号：US133424
申请日：1998-08-13
申请人： Glenn W. Gale , Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
发明人： Glenn W. Gale , Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/31111
摘要： Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.
摘要翻译：使用含有含氟化合物，有机溶剂和水的液体组合物从制品中除去氧化硅。本发明的方法对于去除通过硅衬底的热氧化形成的氧化硅是特别有用的。

3. 发明授权

US5962384A Method for cleaning semiconductor devices 失效
标题翻译：半导体器件清洗方法
公开(公告)号：US5962384A
公开(公告)日：1999-10-05
申请号：US959038
申请日：1997-10-28
申请人： Emanuel I. Cooper , Scott A. Estes , Glenn W. Gale , Rangarajan Jagannathan , Harald F. Okorn-Schmidt , David L. Rath
发明人： Emanuel I. Cooper , Scott A. Estes , Glenn W. Gale , Rangarajan Jagannathan , Harald F. Okorn-Schmidt , David L. Rath
IPC分类号： C11D3/39 , C11D7/06 , C11D7/32 , C11D11/00 , H01L21/306 , C11D9/04 , C03C23/00 , C11D3/37 , C23G1/02
CPC分类号： H01L21/02052 , C11D11/0047 , C11D3/3947 , C11D7/06 , C11D7/3245
摘要： A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH.sub.4 OH:H.sub.2 O.sub.2) solution or a dilute solution such as a 5:x:1 to 200:x:1 solution wherein x is 0.025 to 2.
摘要翻译：提供了一种使用相同的水溶性SC-1溶液处理多个半导体衬底的方法，该溶液通过存在于溶液中的金属离子或包含含有过氧化氢的碱性溶液的衬底表面去除和/或抑制半导体表面的污染以及抗氧化性螯合添加剂，如有效提供所需治疗结果的量的CDTA。 SC-1溶液可以是常规的5:1:1（水：NH4OH:H2O2）溶液或稀溶液，例如5:x:1至200:x:1的溶液，其中x为0.025至2。

4. 发明授权

US06191085B1 Method for cleaning semiconductor devices 失效
标题翻译：半导体器件清洗方法
公开(公告)号：US06191085B1
公开(公告)日：2001-02-20
申请号：US09307695
申请日：1999-05-10
申请人： Emanuel I. Cooper , Scott A. Estes , Glenn W. Gale , Rangarajan Jagannathan , Harald F. Okorn-Schmidt , David L. Rath
发明人： Emanuel I. Cooper , Scott A. Estes , Glenn W. Gale , Rangarajan Jagannathan , Harald F. Okorn-Schmidt , David L. Rath
IPC分类号： C11D904
CPC分类号： H01L21/02052 , C11D3/3947 , C11D7/06 , C11D7/3245 , C11D11/0047
摘要： A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH4OH:H2O2) solution or a dilute solution such as a 5:x:1 to 200:x:l solution wherein x is 0.025 to 2.
摘要翻译：提供了一种使用相同的水溶性SC-1溶液处理多个半导体衬底的方法，该溶液通过存在于溶液中的金属离子或包含含有过氧化氢的碱性溶液的衬底表面去除和/或抑制半导体表面的污染以及抗氧化性螯合添加剂，如有效提供所需治疗结果的量的CDTA。 SC-1溶液可以是常规的5:1:1（水：NH4OH:H2O2）溶液或稀溶液如5:x:1至200:x:1的溶液，其中x为0.025至2。

5. 发明授权

US06276370B1 Sonic cleaning with an interference signal 失效
标题翻译：用干扰信号进行声波清洗
公开(公告)号：US06276370B1
公开(公告)日：2001-08-21
申请号：US09343827
申请日：1999-06-30
申请人： Emily E. Fisch , Glenn W. Gale , Harald F. Okorn-Schmidt , William A. Syverson
发明人： Emily E. Fisch , Glenn W. Gale , Harald F. Okorn-Schmidt , William A. Syverson
IPC分类号： B08B302
CPC分类号： H01L21/67057 , B08B3/12 , G10K15/02 , Y10S134/902
摘要： An array of ultrasonic or megasonic transducers is used to clean a substrate. An interference signal that is the superposition of the signals from each transducer enhances the cleaning. The system improves cleaning by providing a higher intensity beam than is available from uncoupled transducers to facilitate removal of smaller particles. In addition, the beam can be swept across the substrate to provide a uniform cleaning of the entire surface, avoiding dead spots. The system can be adapted for use in a vessel or for single wafer processing with a stream of fluid or a puddle of fluid.
摘要翻译：使用超声波或兆声波换能器阵列来清洁基底。作为来自每个换能器的信号的叠加的干扰信号增强了清洁。该系统通过提供比不连接的换能器可获得的更高强度的束来改善清洁以便于去除更小的颗粒。此外，梁可以扫过基板，以提供对整个表面的均匀清洁，从而避免死点。该系统可以适用于容器中或用于具有流体流或流体池的单晶片处理。

6. 发明申请

US20110183522A1 METHOD AND APPARATUS FOR PATTERN COLLAPSE FREE WET PROCESSING OF SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件图案自由湿法处理方法与装置
公开(公告)号：US20110183522A1
公开(公告)日：2011-07-28
申请号：US12694134
申请日：2010-01-26
申请人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
发明人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
IPC分类号： H01L21/306 , H01L21/3065
CPC分类号： H01L21/31116 , H01L21/0206 , H01L21/02068 , H01L21/3081 , H01L21/31111
摘要： A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.
摘要翻译：提供了一种用于处理在制造半导体器件中使用的晶片的方法。该方法可以包括在晶片上形成高纵横比特征，其后是湿加工和干燥。在干燥期间，可能发生图案塌陷。可以修复该图案崩溃以允许对晶片进行额外的处理。在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。

7. 发明授权

US5966631A Forced plug processing for high aspect ratio structures 失效
标题翻译：用于高纵横比结构的强制插头处理
公开(公告)号：US5966631A
公开(公告)日：1999-10-12
申请号：US944207
申请日：1997-10-03
申请人： Glenn W. Gale , Bernadette Pierson , William Syverson
发明人： Glenn W. Gale , Bernadette Pierson , William Syverson
IPC分类号： H01L21/4763
CPC分类号： H01L21/02057 , H01L21/02282 , H01L21/31111 , H01L27/1087 , H01L29/66181 , Y10S438/906 , Y10S438/963
摘要： A forced plug process for high aspect ratio structures. The process comprises the steps of providing a liquid plug in a high aspect ratio structure; increasing a gas pressure to force the liquid plug down into the high aspect ratio structure; and suddenly decreasing the gas pressure allowing the liquid plug to be ejected from the high aspect ratio structure. The process is useful for removing unwanted particles from a high aspect ratio structure, as well as for etching and coating the side walls of the structure.
摘要翻译：用于高纵横比结构的强制插塞过程。该方法包括以高纵横比结构提供液塞的步骤; 增加气体压力以迫使液体塞塞进入高纵横比结构; 并且突然降低气体压力，从而允许液体塞从高纵横比结构喷出。该方法可用于从高纵横比结构去除不需要的颗粒，以及蚀刻和涂覆结构的侧壁。

8. 发明授权

US08440573B2 Method and apparatus for pattern collapse free wet processing of semiconductor devices 有权
标题翻译：用于半导体器件的图形无塌陷湿法处理的方法和装置
公开(公告)号：US08440573B2
公开(公告)日：2013-05-14
申请号：US12694134
申请日：2010-01-26
申请人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
发明人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/0206 , H01L21/02068 , H01L21/3081 , H01L21/31111
摘要： A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.
摘要翻译：提供了一种用于处理在制造半导体器件中使用的晶片的方法。该方法可以包括在晶片上形成高纵横比特征，其后是湿加工和干燥。在干燥期间，可能发生图案塌陷。可以修复该图案崩溃以允许对晶片进行额外的处理。在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。

9. 发明授权

US06356653B2 Method and apparatus for combined particle location and removal 失效
标题翻译：用于组合颗粒定位和去除的方法和装置
公开(公告)号：US06356653B2
公开(公告)日：2002-03-12
申请号：US09116680
申请日：1998-07-16
申请人： Jeffrey A. Brigante , Glenn W. Gale , Maurice R. Hevey , Frederick W. Kern, Jr. , Ben Kim , Joel M. Sharrow , William A. Syverson
发明人： Jeffrey A. Brigante , Glenn W. Gale , Maurice R. Hevey , Frederick W. Kern, Jr. , Ben Kim , Joel M. Sharrow , William A. Syverson
IPC分类号： G06K900
CPC分类号： H01L22/20 , H01L21/268
摘要： A method for removing one or more particles from a surface of an object is provided. The method has first and second steps of detecting and locating the one or more particles on the surface of the object. In a third step, focused energy is directed onto one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface. In preferred variations of the method of the present invention, the object is a semiconductor wafer and the directed focused energy is in the form of a laser. Also provided is an apparatus for removing the plurality of particles from the surface of the object. The apparatus includes a detector for detecting and locating the plurality of particles on the surface of the object, and a laser for directing focused energy on one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface.
摘要翻译：提供了从物体表面去除一个或多个颗粒的方法。该方法具有检测和定位物体表面上的一个或多个颗粒的第一和第二步骤。在第三步骤中，将聚焦的能量引导到一个或多个检测到的颗粒上以破坏一个或多个颗粒与表面之间的键能，从而从表面除去一个或多个颗粒。在本发明方法的优选变型中，目的是半导体晶片，并且定向的聚焦能是激光的形式。还提供了用于从物体的表面去除多个颗粒的装置。该装置包括用于检测和定位物体表面上的多个颗粒的检测器和用于将聚焦能量引导到一个或多个检测到的颗粒上的激光器，以破坏一个或多个颗粒与表面之间的结合能，由此从表面去除一个或多个颗粒。

10. 发明授权

US06783599B2 Method of cleaning contaminants from the surface of a substrate 失效
标题翻译：从基材表面清洗污染物的方法
公开(公告)号：US06783599B2
公开(公告)日：2004-08-31
申请号：US09909277
申请日：2001-07-19
申请人： Glenn W. Gale , Frederick W. Kern, Jr. , William Alfred Syverson
发明人： Glenn W. Gale , Frederick W. Kern, Jr. , William Alfred Syverson
IPC分类号： B08B702
CPC分类号： H01L21/67057 , B08B7/0014 , B08B7/0092 , B08B7/028 , H01L21/67051
摘要： Contaminants are removed from a surface of a substrate by applying a fluid to the surface; lowering the temperature of the fluid to form a solid layer of the fluid and entrap contaminants therein; and applying energy to the layer and/or substrate to cause the layer containing the contaminants to separate from the surface.
摘要翻译：通过向表面施加流体从污染物的表面除去污染物; 降低流体的温度以形成流体的固体层并且在其中捕获污染物; 并向层和/或基底施加能量以使含有污染物的层与表面分离。

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