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1. 发明申请

US20070025026A1 Thin shield structure for reduced protrusion in a magnetoresistive head 失效
标题翻译：薄屏蔽结构，用于在磁阻头中减少突起
公开(公告)号：US20070025026A1
公开(公告)日：2007-02-01
申请号：US11191767
申请日：2005-07-28
申请人： Gity Hosseinali , Vladimir Nikitin , Robert Smith
发明人： Gity Hosseinali , Vladimir Nikitin , Robert Smith
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3116 , G11B5/115 , G11B5/3136 , G11B5/3912 , G11B5/3967
摘要： A magnetic data recording head having reduced thermally induced shield (pole tip) protrusion. The head includes a magnetoresistive sensor sandwiched between first and second shield. The shields have a substantially reduced thickness. The distance between the shields defines a gap (G) and the shields each have a thickness (ST) such that the ratio ST/G is greater than 2, but less than 50. More preferably the ratio ST/G is greater than 2, but less than 20, and yet more preferably, the ratio ST/G is greater than 2 and less than 10.
摘要翻译：具有减少的热感应屏蔽（极尖）突起的磁数据记录头。头包括夹在第一和第二屏蔽之间的磁阻传感器。屏蔽件具有大大减小的厚度。屏蔽之间的距离限定了间隙（G），并且屏蔽件各自具有厚度（ST），使得比率ST / G大于2但小于50.更优选地，比率ST / G大于2，但小于20，还更优选地，比率ST / G大于2且小于10。

2. 发明授权

US08704319B2 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories 有权
标题翻译：用于提供具有用于自旋转移转矩存储器中的插入层的磁性层的方法和系统
公开(公告)号：US08704319B2
公开(公告)日：2014-04-22
申请号：US13332328
申请日：2011-12-20
申请人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
发明人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。自由层具有固有阻尼常数。非磁性间隔层位于被钉扎层和自由层之间。所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

3. 发明授权

US08698259B2 Method and system for providing a magnetic tunneling junction using thermally assisted switching 有权
标题翻译：使用热辅助切换提供磁隧道结的方法和系统
公开(公告)号：US08698259B2
公开(公告)日：2014-04-15
申请号：US13332282
申请日：2011-12-20
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
摘要翻译：描述了磁连接。磁结包括钉扎层，非磁性间隔层和自由层。磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。非磁性间隔层位于被钉扎层和自由层之间。自由层被配置为可以使用通过磁结的写入电流来切换。自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料层。

4. 发明申请

US20130155754A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY UTILIZING A SHIFT REGISTER 有权
标题翻译：提供使用移位寄存器的磁记录的方法和系统
公开(公告)号：US20130155754A1
公开(公告)日：2013-06-20
申请号：US13332230
申请日：2011-12-20
申请人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
发明人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
IPC分类号： G11C19/02
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1675
摘要： A magnetic memory is described. The magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain walls shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.
摘要翻译：描述磁存储器。磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。每个磁存储元件包括被钉扎层，自由层和在钉扎层和自由层之间的非磁性间隔层。当写入电流通过磁存储元件时，自由层可在稳定磁状态之间切换。移位寄存器对应于磁存储元件。每个移位寄存器包括由畴壁分隔的域。一个域与相邻域反向并行。移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时，每个畴壁移动到邻接畴壁的位置。

5. 发明申请

US20130154035A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING 有权
标题翻译：使用热辅助开关提供磁性隧道接头的方法和系统
公开(公告)号：US20130154035A1
公开(公告)日：2013-06-20
申请号：US13332282
申请日：2011-12-20
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L27/22 , G11B5/84 , B05D5/12 , G11B5/66 , G11B5/673
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
摘要翻译：描述了磁连接。磁结包括钉扎层，非磁性间隔层和自由层。磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。非磁性间隔层位于被钉扎层和自由层之间。自由层被配置为可以使用通过磁结的写入电流来切换。自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料层。

6. 发明申请

US20120170362A1 METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES 有权
标题翻译：用于提供旋转传动扭矩磁记录中可用的双磁性隧道结的方法和系统
公开(公告)号：US20120170362A1
公开(公告)日：2012-07-05
申请号：US13415261
申请日：2012-03-08
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

7. 发明授权

US07990652B2 Perpendicular magnetic write head with stepped write pole for reduced MCW dependency on skew angle 有权
标题翻译：具有阶梯式写入极的垂直磁性写入头，用于减小MCW对偏斜角的依赖
公开(公告)号：US07990652B2
公开(公告)日：2011-08-02
申请号：US11949620
申请日：2007-12-03
申请人： Wen-Chien David Hsiao , Yimin Hsu , Quan-chiu Harry Lam , Yansheng Luo , Vladimir Nikitin , Changqing Shi
发明人： Wen-Chien David Hsiao , Yimin Hsu , Quan-chiu Harry Lam , Yansheng Luo , Vladimir Nikitin , Changqing Shi
IPC分类号： G11B5/187
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3146 , G11B5/315
摘要： A magnetic write head for perpendicular magnetic data recording having a notched write pole for reduced magnetic core width (MCW) dependence on skew. The write pole is configured with a notch that can extend to or slightly beyond the flare point of the write pole, and is formed on the leading portion of the write pole. The notch can have a notch depth, as measured from the ABS of 50-200 nm or about 120 nm. The notch can have a notch height, measured in the down track direction that is 40-90 nm or 20-90 percent of the write pole height.
摘要翻译：用于垂直磁数据记录的磁写头，具有用于减小磁芯宽度（MCW）的偏斜写入极对偏斜的依赖性。写入极配置有可以延伸到或稍微超过写入极的闪点的凹口，并且形成在写入极的引导部分上。切口可以具有从50-200nm或约120nm的ABS测量的切口深度。切口可以具有沿向下方向测量的切口高度，其为40-90nm或写入极高度的20-90％。

8. 发明授权

US07877859B2 Shield fabrication of magnetic write heads 有权
标题翻译：磁写头的屏蔽制造
公开(公告)号：US07877859B2
公开(公告)日：2011-02-01
申请号：US11767330
申请日：2007-06-22
申请人： Wen-Chien Hsiao , Yimin Hsu , Vladimir Nikitin
发明人： Wen-Chien Hsiao , Yimin Hsu , Vladimir Nikitin
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/11 , G11B33/1493 , Y10T29/49021 , Y10T29/49028 , Y10T29/49032 , Y10T29/49043 , Y10T29/49155 , Y10T29/49165
摘要： Methods are provided for fabricating a write head with a self aligned wrap around shield and a self aligned flared region of a write pole. A flare point and a track width of a write pole may be fabricated using multiple processes. The multiple processes utilize several masking structures to define the track width and the flare point of the write pole. A mask structure is formed to cover a first portion of the write pole. An edge of the mask structure adjacent to an exposed second portion of the write pole defines a flare point of the write pole. Various structures of the write head, including shield gap layers, a wrap around shield and a flared region (e.g., the yoke) of the write pole may be fabricated from the flare point defined by the mask structure.
摘要翻译：提供了用于制造具有围绕屏蔽件的自对准包裹和写入极的自对准扩口区域的写入头的方法。可以使用多个工艺来制造写极点的闪点和轨道宽度。多个过程利用几个掩模结构来定义磁道宽度和写入磁极的扩展点。形成掩模结构以覆盖写入极的第一部分。掩模结构的与写入极的暴露的第二部分相邻的边缘限定了写入极的扩张点。写磁头的各种结构，包括屏蔽间隙层，环绕屏蔽层和写磁极的扩口区域（例如磁轭）可以由掩模结构限定的扩口来制造。

9. 发明授权

US07848061B2 Current perpendicular to plane (CPP) magnetoresistive sensor with back flux guide 有权
标题翻译：电流垂直于平面（CPP）磁阻传感器带回流通量
公开(公告)号：US07848061B2
公开(公告)日：2010-12-07
申请号：US11375875
申请日：2006-03-14
申请人： Wipul Jayasekara , Vladimir Nikitin
发明人： Wipul Jayasekara , Vladimir Nikitin
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , G11B5/3935
摘要： A current perpendicular to plane (CPP) magnetoresistive sensor having a free layer that is magnetically coupled with a magnetic shield, thereby providing the free layer with a large effective flux guide. Sensor performance is improved by virtually eliminating demagnetization fields at the back edge of the sensor. The free layer can be magnetically connected with the shield by a magnetic coupling layer or shunt structure that is disposed between the free layer and the shield behind the capping layer.
摘要翻译：垂直于平面（CPP）磁阻传感器的电流具有与磁屏蔽磁耦合的自由层，从而为自由层提供大的有效通量引导。通过几乎消除传感器后边缘处的去磁场来提高传感器性能。自由层可以通过设置在覆盖层后面的自由层和屏蔽层之间的磁耦合层或分流结构与屏蔽体磁连接。

10. 发明授权

US07770285B2 Method of forming a magnetic read/write head 有权
标题翻译：形成磁读写头的方法
公开(公告)号：US07770285B2
公开(公告)日：2010-08-10
申请号：US12058584
申请日：2008-03-28
申请人： Christian R. Bonhote , Malika D. Carter , David A. Dudek , Wen-Chien D. Hsiao , John W. Lam , Vladimir Nikitin
发明人： Christian R. Bonhote , Malika D. Carter , David A. Dudek , Wen-Chien D. Hsiao , John W. Lam , Vladimir Nikitin
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/40 , G11B5/3106 , G11B5/3133 , G11B5/3136 , G11B5/3163 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic read/write head is produced with an insert layer between the substrate and the magnetic transducer. The insert layer has a lower coefficient of thermal expansion than the substrate, which reduces the temperature pole tip recession (T-PTR) of the head because the insert layer is an intervening layer between the substrate and magnetic transducer. The insert layer is produced by plating, e.g., an Invar layer over the substrate prior to fabricating the magnetic transducer. The Invar layer is annealed and the structure planarized prior to depositing a non-magnetic gap layer followed by the fabrication of the magnetic transducer.
摘要翻译：磁性读/写头在衬底和磁换能器之间产生插入层。插入层具有比衬底更低的热膨胀系数，这降低了头部的温度极尖衰退（T-PTR），因为插入层是衬底和磁换能器之间的中间层。在制造磁换能器之前，通过在衬底上电镀例如Invar层来制造插入层。在沉积非磁隙层之前对Invar层进行退火并将结构平坦化，随后制造磁换能器。

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