会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明授权
    • Plasma enhanced chemical vapor deposition apparatus
    • 等离子体增强化学气相沉积装置
    • US06772710B2
    • 2004-08-10
    • US10227785
    • 2002-08-26
    • Young Suk Lee
    • Young Suk Lee
    • C23C1600
    • C23C16/45563C23C16/30C23C16/45589C23C16/509
    • In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torr˜1 Torr, the wafer is heated at 25° C.˜400° C., and RF power in the range of 100 W˜2000 W is applied.
    • 在包括反应室的PECVD(等离子体增强化学气相沉积)装置中; 多个感受体安装在反应室内,分别水平安装在晶片上; 用于加热感受体的加热装置; 设置在反应室外部的电源单元; 从所述电源单元接收RF功率的等离子体电极,产生并保持所述反应室内的等离子体; 以及具有水平旋转并且在反应室内供应气体的两个喷射喷射器的旋转喷射喷射器,通过经由喷射喷射器提供BTMSM蒸汽和氧气保持气体来沉积薄膜,通过另一个喷射喷射器供应氢气保留气体并水平旋转 喷油器供应。 这里,反应室内的压力为0.1Torr〜1Torr,将晶片加热至25℃〜400℃,施加100W〜2000W范围内的RF功率。