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    • 1. 发明申请
    • INTEGRATED CIRCUIT
    • 集成电路
    • US20120292717A1
    • 2012-11-22
    • US13497047
    • 2010-09-22
    • Gerwin Hermanus GelinckBirgitta Katarina Charlotte Kjellander
    • Gerwin Hermanus GelinckBirgitta Katarina Charlotte Kjellander
    • H01L27/088
    • H01L27/283H01L51/0545H01L51/10
    • An integrated circuit, comprising a first insulating layer; a semiconductor layer; a first layer of conductors in near-ohmic or ohmic contact with the semiconductor layer and a second layer of conductors separated from the semiconductor layer by the first insulating layer, the first and second layers of conductors being patterned to form a plurality of functional blocks comprising a plurality of transistors, the first layer conductors serving as source/drain electrodes and the second layer conductors serving as gate electrodes; wherein each functional block comprises a corresponding island of the semiconductor layer isolated from that of another functional block by portions of a second insulating layer, the functional blocks being arranged such that (i) source/drain electrodes that are from different transistors and neighbour one another are arranged to be at the same potential and (ii) no conductors are present between said neighbouring electrodes.
    • 一种集成电路,包括第一绝缘层; 半导体层; 与半导体层接近欧姆或欧姆接触的第一导体层和由第一绝缘层与半导体层分离的第二导体层,第一和第二导体层被图案化以形成多个功能块,包括 多个晶体管,第一层导体用作源/漏电极,第二层导体用作栅电极; 其中每个功能块包括通过第二绝缘层的一部分与另一个功能块的相应的隔离的半导体层的岛,所述功能块被布置为使得(i)来自不同晶体管并且彼此相邻的源/漏电极 被布置成处于相同的电位,并且(ii)在所述相邻电极之间不存在导体。
    • 2. 发明授权
    • Method for addressing active matrix displays with ferroelectrical thin film transistor based pixels
    • 基于铁电薄膜晶体管的像素寻址有源矩阵显示的方法
    • US08125434B2
    • 2012-02-28
    • US12091677
    • 2007-11-03
    • Hjalmar Edzer Ayco HuitemaGerwin Hermanus Gelinck
    • Hjalmar Edzer Ayco HuitemaGerwin Hermanus Gelinck
    • G09G3/36
    • G09G3/20G09G2300/08
    • A pixel (P) of a display (20) includes a memory element in a form of a ferroelectric thin film transistor (“TFT”) (60) and a display element (62) operably coupled to the ferroelectric TFT (60). The ferroelectric TFT (60) is set to a conductive state in response to a conductive row drive voltage and a conductive column drive voltage being applied to the ferroelectric TFT (60) during a beginning phase of the addressing period for the pixel (P). The ferroelectric TFT (60) facilitates a charging of the display element (62) in response a charging row drive voltage and a charging column drive voltage being applied to the ferroelectric TFT (60) during an intermediate phase of the addressing period for the pixel (P). The ferroelectric TFT (60) is reset to a non-conductive state in response to a non-conductive row drive voltage and a non-conductive column drive voltage being applied to the ferroelectric TFT (60) during an ending phase of the addressing period for the pixel (P).
    • 显示器(20)的像素(P)包括可操作地耦合到铁电TFT(60)的铁电薄膜晶体管(“TFT”)(60)和显示元件(62)形式的存储元件。 在对于像素(P)的寻址周期的开始阶段期间,铁电TFT(60)响应于导电行驱动电压和导电柱驱动电压被施加到铁电TFT(60)而被设置为导通状态。 铁电TFT(60)在像素的寻址周期的中间阶段期间响应于充电行驱动电压和充电列驱动电压被施加到铁电TFT(60)而促进显示元件(62)的充电 P)。 铁电TFT(60)响应于非导电行驱动电压而复位到非导通状态,并且在寻址周期的结束阶段期间将非导电列驱动电压施加到铁电TFT(60) 像素(P)。