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1. 发明申请

US20050194039A1 Method of preparing a silicon nitride based substrate for semiconductor components 审中-公开
标题翻译：制备半导体元件用氮化硅基基板的方法
公开(公告)号：US20050194039A1
公开(公告)日：2005-09-08
申请号：US11125065
申请日：2005-05-09
申请人： Gerhard Wotting , Peter Woditsch , Christian Hassler , Gunther Stollwerck
发明人： Gerhard Wotting , Peter Woditsch , Christian Hassler , Gunther Stollwerck
IPC分类号： C04B35/584 , C04B35/589 , C04B35/591 , C04B35/593 , C04B41/52 , C04B41/89 , H01L31/0392 , H01L31/04 , H01L31/18 , H01L31/00
CPC分类号： C04B41/009 , C04B35/589 , C04B35/591 , C04B35/5935 , C04B41/52 , C04B41/89 , C04B2111/00844 , H01L31/03921 , H01L31/1804 , Y02E10/547 , Y02P70/521 , C04B41/4531 , C04B41/5035 , C04B41/5066 , C04B41/524 , C04B41/0072 , C04B41/5096 , C04B41/5353 , C04B41/4529 , C04B41/5011 , C04B41/5041 , C04B35/584
摘要： A process of producing a substrate is described. The process involves mixing intensively a starting mixture comprising silicon power, Si3N4, an silicon-organic polymer, and optionally an anhydrous organic pressing oil, thereby forming an intermediate mixture. The intermediate mixture is then shaped by a method selected from dry pressing, slip casting, hot pressing, extrusion casting, or tape casting, thereby forming an intermediate shaped article. The intermediate shaped article is then crosslinked and pyrolyzed in an inert atmosphere, thereby forming a crosslinked and pyrolyzed shaped article. The crosslinked and pyrolyzed shaped article is next nitrided, resulting in the formation of a nitrided shaped article, which may be optionally sintered, thereby forming the substrate. The substrates of the present invention may be used in the fabrication of semiconductor components, such as thin film solar cells.
摘要翻译：对基板的制造方法进行说明。该方法包括将包含硅粉末，Si 3 N 4 N 4，硅 - 有机聚合物和任选的无水有机压榨油的起始混合物强烈混合，从而形成中间体混合物。然后通过选自干压，滑移浇铸，热压，挤压铸造或带铸造的方法来形成中间体混合物，从而形成中间成型制品。然后将中间成形制品在惰性气氛中交联并热解，从而形成交联和热解的成型制品。接下来将交联和热解的成形制品氮化，形成氮化成形制品，其可任选地烧结，从而形成基材。本发明的基板可以用于半导体部件的制造，例如薄膜太阳能电池。

2. 发明授权

US06916560B2 Silicon nitride based substrate for semi-conductor components 失效
标题翻译：用于半导体部件的氮化硅基基板
公开(公告)号：US06916560B2
公开(公告)日：2005-07-12
申请号：US10433632
申请日：2001-11-22
申请人： Gerhard Wötting , Peter Woditsch , Christian Hässler , Gunther Stollwerck
发明人： Gerhard Wötting , Peter Woditsch , Christian Hässler , Gunther Stollwerck
IPC分类号： C04B35/584 , C04B35/589 , C04B35/591 , C04B35/593 , C04B41/52 , C04B41/89 , H01L31/0392 , H01L31/04 , H01L31/18 , B32B9/04 , B32B18/00 , C04B35/565
CPC分类号： C04B41/009 , C04B35/589 , C04B35/591 , C04B35/5935 , C04B41/52 , C04B41/89 , C04B2111/00844 , H01L31/03921 , H01L31/1804 , Y02E10/547 , Y02P70/521 , C04B41/4531 , C04B41/5035 , C04B41/5066 , C04B41/524 , C04B41/0072 , C04B41/5096 , C04B41/5353 , C04B41/4529 , C04B41/5011 , C04B41/5041 , C04B35/584
摘要： The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.
摘要翻译：本发明涉及一种用于半导体元件的基于硅氮化物的衬底，所述衬底包含作为结晶相的氮化硅（Si 3 N 4），碳化硅（SIC）和氮氧化硅（Si 2 N 2 O）。硅相含量小于或等于5％，生产过程中的收缩率小于5％，底材的开孔率小于15％体积。％。本发明还涉及一种用于生产和使用所述衬底作为半导体部件，特别是薄膜太阳能电池的元件的方法，以及包含所述衬底的半导体部件。

3. 发明授权

US06576831B2 Multicrystalline silicon having a low proportion of active grain borders 有权
公开(公告)号：US06576831B2
公开(公告)日：2003-06-10
申请号：US09990505
申请日：2001-11-14
申请人： Peter Woditsch , Gunther Stollwerck , Christian Hässler , Wolfgang Koch
发明人： Peter Woditsch , Gunther Stollwerck , Christian Hässler , Wolfgang Koch
IPC分类号： H01L310264
CPC分类号： C30B29/06 , C30B11/00 , H01L31/03682 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S136/29
摘要： Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.

4. 发明授权

US6013872A Directionally solidified, multicrystalline silicon, a process for the production thereof and its use, and solar cells containing this silicon and a process for the production thereof 失效
标题翻译：定向凝固的多晶硅，其生产方法及其用途，以及含有该硅的太阳能电池及其生产方法
公开(公告)号：US6013872A
公开(公告)日：2000-01-11
申请号：US61855
申请日：1998-04-17
申请人： Peter Woditsch , Christian Hassler , Wolfgang Krumbe , Horst Lange , Klaus Weber
发明人： Peter Woditsch , Christian Hassler , Wolfgang Krumbe , Horst Lange , Klaus Weber
IPC分类号： C30B29/06 , C30B11/00 , H01L31/0288 , H01L31/04 , H01L31/068 , H01L31/18 , H01L25/00
CPC分类号： C30B29/06 , C30B11/00 , H01L31/0288 , H01L31/068 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.
摘要翻译：本发明涉及定向凝固的含砷和/或锑的多晶硅，其生产方法及其用途，以及含有该硅的太阳能电池及其生产方法。

5. 发明授权

US06395661B2 Sintered silicon nitride, components made therewith, specially valves, methods for the production and use thereof 失效
标题翻译：烧结氮化硅，由其制成的部件，特别是阀门，用于生产和使用它们的方法
公开(公告)号：US06395661B2
公开(公告)日：2002-05-28
申请号：US09402403
申请日：1999-10-04
申请人： Gerhard Wötting , Ernst Gugel , Hans Andreas Lindner , Peter Woditsch
发明人： Gerhard Wötting , Ernst Gugel , Hans Andreas Lindner , Peter Woditsch
IPC分类号： C04B35587
CPC分类号： C04B35/584 , C04B35/5935
摘要： A sintered Si3N4 material, valves and components made with the material, and methods for making same.
摘要翻译：烧结Si3N4材料，用该材料制成的阀门和部件及其制造方法。

6. 发明授权

US4525334A Process for the production of silicon 失效
标题翻译：生产硅的工艺
公开(公告)号：US4525334A
公开(公告)日：1985-06-25
申请号：US589204
申请日：1984-03-13
申请人： Peter Woditsch , Martin Abels , Berthold Brazel
发明人： Peter Woditsch , Martin Abels , Berthold Brazel
IPC分类号： C01B33/02 , C01B33/027 , C01B33/033 , C01B33/00
CPC分类号： C01B33/033
摘要： A process for the production of silicon comprising reacting a gaseous silicon compound of the formula SiH.sub.n X.sub.4-n, wherein X is halogen and n is 0 to 3, with aluminum in solid state. The resulting silicon can be highly pure and will have the particle size of the aluminum feed, making it especially useful for production of solar cells.
摘要翻译：一种制备硅的方法，包括使式SiHnX4-n的气态硅化合物（其中X为卤素且n为0至3）与固态的铝反应。所得到的硅可以是高纯度的，并且具有铝进料的粒度，使其特别适用于生产太阳能电池。

7. 发明授权

US4304758A Hydrolyzable titanyl sulphate solutions by decomposition of ternary raw material mixtures 失效
标题翻译：通过三元原料混合物的分解可水解的硫酸氧钛溶液
公开(公告)号：US4304758A
公开(公告)日：1981-12-08
申请号：US213540
申请日：1980-12-05
申请人： Hilmar Rieck , Walter Gutsche , Peter Woditsch , Peter Panek
发明人： Hilmar Rieck , Walter Gutsche , Peter Woditsch , Peter Panek
IPC分类号： C01G23/00 , C22B34/12 , C01G23/053
CPC分类号： C22B34/125 , C01G23/008
摘要： A process for the preparation of a hydrolyzable titanyl sulphate solution comprising adding sulphuric acid having a concentration greater than about 86% to a ternary mixture of two slags and an ilmenite to bring the proportion by weight of H.sub.2 SO.sub.4 to TiO.sub.2 to from about 1.7:1 to 2.2:1 and adding water, dilute sulphuric acid or oleum in amount sufficient to bring the H.sub.2 SO.sub.4 concentration to from about 86 to 96%, thereby to form the titanyl sulphate solution, the first slag having a TiO.sub.2 content greater than about 80% and a Ti(III) content of about 22 to 40%, the second slag having a TiO.sub.2 content of about 60 to 80% and a Ti(III) content of about 5 to 15%, and the ilmenite having a ratio of Fe(III) to Fe(II) of from about 1:1 to 10:1, the slags and ilmenite being present in such proportions that the ternary mixture of raw materials obtained has a molar ratio of Ti(III) to Fe(III).gtoreq.1.4.
摘要翻译：一种制备可水解硫酸氧钛溶液的方法，其包括将浓度大于约86％的硫酸添加到两种炉渣和钛铁矿的三元混合物中，以使H 2 SO 4的重量比例从约1.7:1提高到约1.7:1至 2.2:1，并加入水，稀硫酸或发烟硫酸，其量足以使H 2 SO 4浓度达到约86％至96％，从而形成硫酸氧钛溶液，第一炉渣的TiO 2含量大于约80％，并且 Ti（III）含量为约22〜40％，第二炉渣的TiO 2含量为约60〜80％，Ti（III）含量为5〜15％左右，钛铁矿的Fe（III）对于Fe（II）为约1：1至10：1，炉渣和钛铁矿以以下比例存在：获得的原料的三元混合物具有Ti（III）与Fe（III）的摩尔比> 1.4。

8. 发明授权

US4179306A Stabilizing titanium dioxide pigments with vanadates 失效
标题翻译：用钒酸盐稳定二氧化钛颜料
公开(公告)号：US4179306A
公开(公告)日：1979-12-18
申请号：US913711
申请日：1978-06-08
申请人： Peter Woditsch , Eckhard Bayer , Peter Panek , Heribert Stutgens
发明人： Peter Woditsch , Eckhard Bayer , Peter Panek , Heribert Stutgens
IPC分类号： C09C1/36 , G04B31/02
CPC分类号： C09C1/3661 , C01P2004/84 , C01P2006/60
摘要： A process for the production of a light-stable and weather-stable titanium dioxide pigment comprising precipitating onto the pigment in aqueous suspension a colorless vanadate of at least one of zinc, magnesium, calcium, strontium and barium at a pH-value above 7 in about 0.01 to 5% by weight, expressed as V.sub.2 O.sub.5, based on TiO.sub.2. Advantageously the pigment either before or after precipitation of the vanadate is coated with at least one oxide, oxide hydrate or phosphate of titanium, silicon, aluminum or zirconium.
摘要翻译：一种用于生产光稳定和天气稳定的二氧化钛颜料的方法，其包括在水性悬浮液中在pH值高于7的情况下将至少一种锌，镁，钙，锶和钡的无色钒酸盐沉淀在颜料上，约0.01至5重量％，以V 2 O 5表示，基于TiO 2。有利地，在钒酸盐沉淀之前或之后，颜料涂覆有至少一种钛，硅，铝或锆的氧化物，氧化物水合物或磷酸盐。

9. 发明授权

US4093777A Coated stabilized cadmium chalcogenide pigments 失效
标题翻译：涂层稳定的镉硫属化物颜料
公开(公告)号：US4093777A
公开(公告)日：1978-06-06
申请号：US620092
申请日：1975-10-06
申请人： Heinrich Heine , Peter Woditsch , Theodor Bohmann , Dieter Rade
发明人： Heinrich Heine , Peter Woditsch , Theodor Bohmann , Dieter Rade
IPC分类号： C01B19/00 , C01G11/00 , C09C1/10 , B32B9/04
CPC分类号： C09C1/10 , C01B19/007 , C01G11/00 , C01P2006/80 , Y10T428/2991 , Y10T428/2993 , Y10T428/2998 , Y10T428/31667
摘要： A stabilized cadmium chalcogenide, in which optionally zinc and/or mercury is present in the lattice, carrying at least one coating of a sparingly-soluble sulfide is produced by adding at least one water-soluble salt of an element forming a sparingly-soluble sulfide to an aqueous chalcogenide suspension, mixing with a compound releasing sulfide ions and/or mixing the cadmium chalcogenide suspension with a soluble thio-compound of an element forming a sparingly-soluble sulfide thereby to precipitate a sparingly-soluble sulfide onto the chalcogenide, subsequently filtering, optionally washing, drying and annealing the aftertreated chalcogenide. Suitable sparingly-soluble sulfides are, for example, the sulfides of the elements Zn, Hg, In, Sn, Pb, As, Sb, Bi, V, Mo, W, Cu and Ag.
摘要翻译：稳定的镉硫族化物，其中任选地锌和/或汞存在于晶格中，携带至少一种微溶于硫化物的涂层，通过加入至少一种形成微溶的硫化物的元素的水溶性盐与硫酸氢盐水溶液混合，和/或将硫属镉硫化物悬浮液与形成微溶性硫化物的元素的可溶性硫代化合物混合，从而将少量溶解的硫化物沉淀到硫族化物上，随后过滤，任选地对后处理的硫属化物进行洗涤，干燥和退火。合适的微溶硫化物是例如元素Zn，Hg，In，Sn，Pb，As，Sb，Bi，V，Mo，W，Cu和Ag的硫化物。

10. 发明授权

US4790871A Strip-shaped films of metals, a process and an apparatus for the production thereof and the use thereof 失效
标题翻译：金属条带状膜，其制造方法和装置及其用途
公开(公告)号：US4790871A
公开(公告)日：1988-12-13
申请号：US589612
申请日：1984-03-14
申请人： Ingo Schwirtlich , Peter Woditsch
发明人： Ingo Schwirtlich , Peter Woditsch
IPC分类号： C30B13/06 , C22C1/02 , C30B13/00 , C30B13/32 , C30B29/06 , C30B29/64 , C22B9/16
CPC分类号： C30B13/32 , C30B13/00 , C30B29/60 , Y10T428/12458
摘要： In the recrystallization and purification of a strip-shaped film of a metal or metalloid wherein one or more locally restricted melting zones are produced and are moved through the film, the improvement which comprises advancing the film, and melting it in zones which are transverse to the direction of advance of the strip-shaped film. Advantageously the film is melted by passing a current through a spirally wound coil which is placed near the film; the film is advantageously advanced in a plane so that the melt zones are diagonal relative to the film.
摘要翻译：在金属或准金属的带状膜的再结晶和纯化中，其中产生一个或多个局部受限的熔融区并移动通过该膜，其改进包括使膜前进并在横向于带状膜的前进方向。有利地，通过使电流通过放置在膜附近的螺旋卷绕的线圈而熔化膜; 薄膜有利地在平面中前进，使得熔体区域相对于薄膜是对角线的。

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