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    • 7. 发明授权
    • Silicon nitride powder of low oxygen content
    • 低氧含量的氮化硅粉末
    • US4983371A
    • 1991-01-08
    • US396328
    • 1989-08-21
    • Ulrike PitzerBenno LaubachGerhard Franz
    • Ulrike PitzerBenno LaubachGerhard Franz
    • C01B21/068
    • C01B21/068C01P2006/12
    • Si.sub.3 N.sub.4 powder wherein the total oxygen content of the powder is 0.4% by weight or less is produced by preparing an amorphous Si.sub.3 N.sub.4 intermediate by reacting a Si-containing compound with an N-containing compound and the intermediate is then crystallized wherein "P", multiplication product of(i) the specific surface of the amorphous intermediate (BET in m.sup.2 /g),(ii) the moisture content C.sub.H.sbsb.2.sub.O (in volume ppm) of the atmosphere during handling and(iii) the time t in hours required for handling the amorphous intermediate,is kept smaller than the limit value product P.sub.G of 1000 in accordance with the following equation:"P"=BET (m.sup.2 /g).times.C.sub.H.sbsb.2.sub.O (vol ppm).times.t(h)
    • 通过使含Si的化合物与含N的化合物反应制备无定形的Si 3 N 4中间产物,其中粉末的总氧含量为0.4重量%以下的Si 3 N 4粉末,然后使中间体结晶,其中“P” (i)无定形中间体的比表面积(BET / m2 / g),(ii)处理过程中气氛的水分CH 2 O(体积ppm)的产物和(iii)处理所需的时间t 无规中间体根据下式保持小于1000的极限值乘积PG:“P”= BET(m 2 / g)×CH 2 O(体积ppm)×t(h)
    • 9. 发明申请
    • Means and method for patterning a substrate with a mask
    • 用掩模图案化衬底的方法和方法
    • US20050020072A1
    • 2005-01-27
    • US10489632
    • 2001-09-11
    • Robert KachelGerhard Franz
    • Robert KachelGerhard Franz
    • H01L21/033H01L21/3213H01L21/302H01L21/461
    • H01L21/32139H01L21/0331
    • A multilayer mask for patterning a platinum (or other) layer formed on a substrate. The multilayer mask includes a first dielectric layer formed on the platinum layer, a bottom resist layer formed over the first dielectric layer, a second dielectric layer formed on the bottom resist layer, and a top (structure) resist layer formed on the second dielectric layer. The second dielectric layer is patterned using the top resist layer, and serves to prevent photoresist rounding. The first dielectric layer prevents “micro-masking” by acting as an etch stop during subsequent patterning of the bottom resist layer, which is performed using dry etching techniques. The first dielectric layer is then wet etched to expose the platinum layer.
    • 用于图案化形成在基板上的铂(或其它)层的多层掩模。 多层掩模包括形成在铂层上的第一介质层,形成在第一介电层上的底部抗蚀剂层,形成在底部抗蚀剂层上的第二介电层和形成在第二介电层上的顶部(结构)抗蚀剂层 。 使用顶部抗蚀剂层对第二介电层进行图案化,并且用于防止光致抗蚀剂倒圆。 第一电介质层通过在使用干蚀刻技术进行的底部抗蚀剂层的后续图案化期间用作蚀刻停止来防止“微掩模”。 然后湿法蚀刻第一介电层以露出铂层。