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1. 发明授权

US4550257A Narrow line width pattern fabrication 失效
标题翻译：狭窄线宽图案制作
公开(公告)号：US4550257A
公开(公告)日：1985-10-29
申请号：US626178
申请日：1984-06-29
申请人： Gerd K. Binnig , Randall M. Feenstra , Rodney T. Hodgson , Heinrich Rohrer , Jerry M. Woodall
发明人： Gerd K. Binnig , Randall M. Feenstra , Rodney T. Hodgson , Heinrich Rohrer , Jerry M. Woodall
IPC分类号： H01L21/3205 , C23C16/04 , H01J37/317 , H01J37/32
CPC分类号： B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J37/32 , H01J2237/31738 , H01J2237/31759 , Y10S977/857
摘要： The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.
摘要翻译：使用穿过气体的隧道电流来实现8埃量级的线的形成，该气体改变以提供作为线的基础的残留物。隧道电流能量被调节到解离气体所需的能量。

2. 发明授权

US5508829A LTG AlGaAs non-linear optical material and devices fabricated therefrom 失效
标题翻译： LTG AlGaAs非线性光学材料及其制造的器件
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译：光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹所述第一和第二光束的交叉。

3. 发明授权

US5471948A Method of making a compound semiconductor having metallic inclusions 失效
标题翻译：制造具有金属夹杂物的化合物半导体的方法
公开(公告)号：US5471948A
公开(公告)日：1995-12-05
申请号：US240880
申请日：1994-05-11
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L21/20
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译：具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。

4. 发明授权

US4472206A Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing 失效
标题翻译：通过短时间接触退火激活广域化合物半导体中的植入杂质的方法
公开(公告)号：US4472206A
公开(公告)日：1984-09-18
申请号：US440655
申请日：1982-11-10
申请人： Rodney T. Hodgson , Thomas N. Jackson , Hans S. Rupprecht , Jerry M. Woodall
发明人： Rodney T. Hodgson , Thomas N. Jackson , Hans S. Rupprecht , Jerry M. Woodall
IPC分类号： C30B29/40 , C30B31/22 , H01L21/265 , H01L21/314 , H01L21/324 , H01L21/477
CPC分类号： H01L21/3245 , H01L21/26546 , H01L21/314
摘要： Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.
摘要翻译：在广泛的集成电路器件区域上的多元素化合物半导体晶体（例如砷化镓，GaAs）中的离子注入杂质活化是通过使用短时间退火在所述晶体的最易挥发元素的均匀浓度附近以固体形式，在广泛的集成电路器件区域表面上。在集成电路表面上具有离子注入杂质的GaAs集成电路晶片在800-900℃附近在均匀的固体砷层附近退火约1-20秒的时间。

5. 发明授权

US4354198A Zinc-sulphide capping layer for gallium-arsenide device 失效
标题翻译：用于砷化镓器件的硫化锌封盖层
公开(公告)号：US4354198A
公开(公告)日：1982-10-12
申请号：US154700
申请日：1980-05-30
申请人： Rodney T. Hodgson , George D. Pettit , Thomas O. Sedgwick , Jerry M. Woodall
发明人： Rodney T. Hodgson , George D. Pettit , Thomas O. Sedgwick , Jerry M. Woodall
IPC分类号： H01L21/324 , H01L21/314 , H01L21/428 , H01L23/29 , H01L23/31 , H01L29/161
CPC分类号： H01L23/3171 , H01L21/428 , H01L23/291 , H01L2924/0002
摘要： The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.
摘要翻译：本公开提供了使用II-VI族化合物半导体作为表面钝化剂以通过局部加热步骤控制III-V族化合物半导体的表面上的载流子的重组。对于本发明的实践，理论上可以通过II-VI化合物与过量的V族元素的化学反应来实现电荷载体的重组的控制。具体地，本公开提供了在GaAs器件上使用激光退火的ZnS的覆盖层作为钝化层。

6. 发明授权

US4202704A Optical energy conversion 失效
标题翻译：光能转换
公开(公告)号：US4202704A
公开(公告)日：1980-05-13
申请号：US968887
申请日：1978-12-13
申请人： Rodney T. Hodgson , Harold J. Hovel , Jerry M. Woodall
发明人： Rodney T. Hodgson , Harold J. Hovel , Jerry M. Woodall
IPC分类号： H01L31/04 , H01L31/055
CPC分类号： H01L31/055 , Y02E10/52
摘要： Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al.sub.2 O.sub.3 :Cr.sup.+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate.
摘要翻译：通过提供具有适当掺杂的半透明变频支撑构件，例如能够移动入射光能量的波长的Al 2 O 3 :Cr + 3（红宝石），可以在诸如太阳能电池的半导体光能转换装置的构造中实现增强的效率在半导体器件效率最高的方向。通过在器件的有源区域和光变换衬底之间提供晶体完整的容纳区域可以进一步提高效率。

7. 发明申请

US20120085021A1 POWER GENERATION FROM SOLID ALUMINUM 审中-公开
标题翻译：从固体铝发电
公开(公告)号：US20120085021A1
公开(公告)日：2012-04-12
申请号：US13311674
申请日：2011-12-06
申请人： Jerry M. Woodall , Charles R. Allen , Jeffrey T. Ziebarth
发明人： Jerry M. Woodall , Charles R. Allen , Jeffrey T. Ziebarth
IPC分类号： C10L5/40
CPC分类号： C01B3/08 , C10L5/00 , C22C21/00 , C22C28/00 , Y02E50/30 , Y02E60/36
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets are brought into contact with an alloy of the passivation preventing agent having a melting point temperature below that of the solid-like mixture to initiate the hydrogen-producing reaction at a lower temperature.
摘要翻译：用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层，钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。使颗粒与熔点温度低于固体混合物的钝化防止剂的合金接触，以在较低温度下引发产氢反应。

8. 发明授权

US07938879B2 Power generation from solid aluminum 有权
标题翻译：固体铝发电
公开(公告)号：US07938879B2
公开(公告)日：2011-05-10
申请号：US11747706
申请日：2007-05-11
申请人： Jerry M. Woodall , Eric S. Harmon , Kurt C. Koehler , Jeffrey T. Ziebarth , Charles R. Allen , Yuan Zheng , Jong-Hyeok Jeon , George H. Goble , David B. Salzman
发明人： Jerry M. Woodall , Eric S. Harmon , Kurt C. Koehler , Jeffrey T. Ziebarth , Charles R. Allen , Yuan Zheng , Jong-Hyeok Jeon , George H. Goble , David B. Salzman
IPC分类号： C22B11/10
CPC分类号： C01B3/08 , C22C21/00 , C22C28/00 , Y02E60/36 , Y02P20/133
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.
摘要翻译：用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层，钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。颗粒可以以受控的速率引入水或其它合适的氧化剂中以控制源材料与氧化剂的反应速率，从而控制氢的形成速率。描述了用于以不同重量百分比的源材料生成固体状混合物以防止钝化剂的方法。

9. 发明授权

US5132746A Biaxial-stress barrier shifts in pseudomorphic tunnel devices 失效
标题翻译： PSEUDMORPHIC隧道设备中的双向应力障碍物移位
公开(公告)号：US5132746A
公开(公告)日：1992-07-21
申请号：US637397
申请日：1991-01-04
申请人： Emilio E. Mendez , Theoren P. Smith, III , Jerry M. Woodall
发明人： Emilio E. Mendez , Theoren P. Smith, III , Jerry M. Woodall
IPC分类号： H01L29/205 , H01L29/12 , H01L29/737 , H01L29/76 , H01L29/88 , H01L31/10
CPC分类号： B82Y10/00 , H01L29/122 , H01L29/7376 , H01L29/7606
摘要： Resonant tunneling devices having improved peak-to-valley current ratios are disclosed. The resonant tunneling device comprises a quantum well layer surrounded by first and second barrier layers, the first and second barrier layers being comprised of an indirect first III-V compound semiconductor. The first barrier layer being formed on a substrate of a second III-V compound semiconductor having a lattice constant larger than the lattice constant of the first barrier layer thereby inducing a biaxial stress in the first barrier layer. The biaxial stress results in an energy shift at resonance that increases the peak to valley current ratio of the device.

10. 发明授权

US4920069A Submicron dimension compound semiconductor fabrication using thermal etching 失效
标题翻译：亚微米尺寸化学半导体制造采用热蚀刻
公开(公告)号：US4920069A
公开(公告)日：1990-04-24
申请号：US183489
申请日：1988-04-15
申请人： Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
发明人： Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L21/20 , H01L21/263
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02639 , Y10S148/017 , Y10S148/05 , Y10S148/065 , Y10S148/135 , Y10S148/169
摘要： Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要翻译：亚微米结构的制造是通过抑制更多的挥发性元素来提供化合物晶体的蒸汽化学腐蚀来实现的，从而使挥发性较低的元件具有抗附聚和侵蚀速率限制能力，随后可以在相同的环境中随后再生长。侵蚀对晶体取向敏感。

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