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1. 发明申请

US20130230980A1 PHOTORESIST STRUCTURES HAVING RESISTANCE TO PEELING 有权
标题翻译：具有抗剥离性的光电结构
公开(公告)号：US20130230980A1
公开(公告)日：2013-09-05
申请号：US13409863
申请日：2012-03-01
申请人： George LIU , Kuei Shun CHEN , Meng Wei CHEN
发明人： George LIU , Kuei Shun CHEN , Meng Wei CHEN
IPC分类号： H01L21/302
CPC分类号： H01L21/0332
摘要： A method of patterning a semiconductor device including dividing a layout into more than one pattern. The method further includes depositing a film stack on a semiconductor substrate, depositing a hard mask on the film stack, and depositing a first photoresist on the hard mask. The method further includes patterning the first photoresist using a first pattern of the more than one pattern. The method further includes etching the hard mask to transfer a design of the first pattern of the more than one pattern to the hard mask. The method further includes depositing a second photoresist over the etched hard mask and patterning the second photoresist using a second pattern of the more than one pattern. The method further includes etching portions of the film stack exposed by a combination of the etched hard mask and the second photoresist.
摘要翻译：一种图案化半导体器件的方法，包括将布局分为多于一种图案。该方法还包括在半导体衬底上沉积薄膜叠层，在薄膜叠层上沉积硬掩模，以及在硬掩模上沉积第一光致抗蚀剂。该方法还包括使用多于一种图案的第一图案来图案化第一光致抗蚀剂。该方法还包括蚀刻硬掩模以将多于一种图案的第一图案的设计转移到硬掩模。该方法还包括在蚀刻的硬掩模上沉积第二光致抗蚀剂并使用多于一种图案的第二图案来图案化第二光致抗蚀剂。该方法还包括蚀刻通过蚀刻的硬掩模和第二光致抗蚀剂的组合暴露的膜堆的部分。

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