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1. 发明授权

US4771016A Using a rapid thermal process for manufacturing a wafer bonded soi semiconductor 失效
标题翻译：使用快速热处理制造晶圆粘合的半导体
公开(公告)号：US4771016A
公开(公告)日：1988-09-13
申请号：US42135
申请日：1987-04-24
申请人： George Bajor , Joseph S. Raby
发明人： George Bajor , Joseph S. Raby
IPC分类号： H01L21/20 , H01L21/762 , H01L21/76
CPC分类号： H01L21/2007 , H01L21/76251 , Y10S148/012 , Y10S148/135 , Y10S148/15
摘要： A method of forming a high quality silicon on insulator semiconductor device using wafer bonding. The annealing time for the wafer bonding process is substantially reduced through the use of a rapid thermal annealer, thereby resulting in minimizing the redistribution of the doping concentration resulting from the annealing process.
摘要翻译：使用晶片接合形成高质量硅绝缘体上半导体器件的方法。通过使用快速热退火炉，晶片接合工艺的退火时间显着降低，从而导致由退火过程产生的掺杂浓度的再分配最小化。

2. 发明授权

US4595608A Method for selective deposition of tungsten on silicon 失效
标题翻译：在硅上选择性沉积钨的方法
公开(公告)号：US4595608A
公开(公告)日：1986-06-17
申请号：US669787
申请日：1984-11-09
申请人： Edward M. King , Kurt E. Gsteiger , Joseph S. Raby
发明人： Edward M. King , Kurt E. Gsteiger , Joseph S. Raby
IPC分类号： C23C16/04 , H01L21/285 , H01L21/306 , H01L21/768 , B05D7/22 , C23C16/08
CPC分类号： H01L21/76879 , C23C16/04 , H01L21/28562
摘要： A metal is selectively chemically vapor deposited on a substrate through openings in a moisture adsorbing mask layer by maintaining moisture in the mask layer. Thick metal layers are formed by precharging the mask with moisture. Also a cleaned tube is prepared for selective deposition by operating the process with a bare substrate until the tube is coated. The selective deposition is then performed.
摘要翻译：通过保持掩模层中的水分，通过水分吸附掩模层中的开口将金属选择性地化学气相沉积在基底上。厚度的金属层是通过用水分对面具预充电形成的。另外，通过用裸衬底操作该工艺来制备用于选择性沉积的清洁管，直到管被涂覆。然后进行选择性沉积。

3. 发明授权

US4650696A Process using tungsten for multilevel metallization 失效
标题翻译：使用钨进行多层金属化的工艺
公开(公告)号：US4650696A
公开(公告)日：1987-03-17
申请号：US782691
申请日：1985-10-01
申请人： Joseph S. Raby
发明人： Joseph S. Raby
IPC分类号： H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/28525 , H01L21/32051 , H01L21/76877 , H01L21/76889
摘要： A process is provided for making semiconductor devices with refractory metal metallization layers in place of aluminum metallization layers. An insulative layer is deposited onto a silicon substrate and a pattern is formed in the insulative layer. Prior to deposition of the metallization layer onto the patterned insulative layer, a layer of polycrystalline silicon is deposited onto the patterned insulative layer by means of a low pressure chemical vapor deposition process. The polycrystalline silicon is deposited to a thickness of preferably 700-800 Angstroms. After deposition of the polycrystalline silicon layer, refractory metal is deposited by means of a low pressure chemical vapor deposition process. Preferably, the refractory metal is deposited to a thickness of one micrometer at a temperature of 300.degree.-600.degree. C. depending on the desired deposition rate. The refractory metal vapor deposition process etches away 300-400 Angstroms of the polysilicon layer, thereby leaving 300-400 Angstroms of polysilicon for the purpose of adhering the insulative layer to the refractory metal layer. The composite is then heat treated to reduce the vertical resistivity due to the pressure of the high resistance polycrystalline silicon layer.
摘要翻译：提供了一种用于制造具有难熔金属金属化层以代替铝金属化层的半导体器件的方法。绝缘层沉积到硅衬底上，并且在绝缘层中形成图案。在将金属化层沉积到图案化绝缘层之前，通过低压化学气相沉积工艺将多晶硅层沉积到图案化绝缘层上。沉积多晶硅至优选700-800埃的厚度。沉积多晶硅层后，通过低压化学气相沉积工艺沉积难熔金属。优选地，根据所需的沉积速率，在300℃-600℃的温度下沉积难熔金属至1微米的厚度。难熔金属气相沉积工艺使300-400埃的多晶硅层蚀刻，从而留下300-400埃的多晶硅，以将绝缘层粘附到难熔金属层上。然后对复合材料进行热处理以降低由于高电阻多晶硅层的压力引起的垂直电阻率。

4. 发明授权

US4854986A Bonding technique to join two or more silicon wafers 失效
标题翻译：接合技术连接两个或多个硅晶片
公开(公告)号：US4854986A
公开(公告)日：1989-08-08
申请号：US49637
申请日：1987-05-13
申请人： Joseph S. Raby
发明人： Joseph S. Raby
IPC分类号： C04B37/00 , H01L21/18
CPC分类号： H01L21/187
摘要： A method of manufacturing semiconductors formed of bonded wafers. The method includes the use of a heat sink. The heat sink induces a temperature gradient to occur on a single area at the interface of the wafers with the gradient moving rapidly across the remaining surface. As a result of the temperature front, the voids or uncontacted areas between the wafers which result in a typical bonding process are substantially reduced, thereby providing a stronger and more effective bond.
摘要翻译：制造由接合晶片形成的半导体的方法。该方法包括使用散热器。散热器引起温度梯度发生在晶片界面上的单个区域上，梯度快速移动穿过剩余的表面。作为温度前沿的结果，导致典型结合工艺的晶片之间的空隙或未接触区域显着减少，从而提供更强大和更有效的键合。

5. 发明授权

US4389713A Dual pulse method of writing amorphous memory devices 失效
标题翻译：双脉冲写入非晶体存储器件的方法
公开(公告)号：US4389713A
公开(公告)日：1983-06-21
申请号：US272314
申请日：1981-06-10
申请人： Vipin N. Patel , Joseph S. Raby
发明人： Vipin N. Patel , Joseph S. Raby
IPC分类号： G11C16/02 , G11C16/10 , G11C11/00 , H01L45/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0078 , G11C2013/0092
摘要： A first voltage pulse is applied having sufficient amplitude to switch the device from a high to a low resistance state and subsequently maintaining a holding current. A second voltage pulse is applied after the device has switched to drive the filamentous path into the liquid phase for a short duration.
摘要翻译：施加具有足够幅度的第一电压脉冲以将器件从高电平状态切换到低电阻状态，并且随后维持保持电流。在器件切换之后，施加第二个电压脉冲，以将丝状通道驱动到液相中短时间。

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